CH344218A - Verfahren zur Herstellung eines Sinterkörpers aus pulverförmigem, kristallinem Stoff, insbesondere aus Halbleiterstoff - Google Patents
Verfahren zur Herstellung eines Sinterkörpers aus pulverförmigem, kristallinem Stoff, insbesondere aus HalbleiterstoffInfo
- Publication number
- CH344218A CH344218A CH344218DA CH344218A CH 344218 A CH344218 A CH 344218A CH 344218D A CH344218D A CH 344218DA CH 344218 A CH344218 A CH 344218A
- Authority
- CH
- Switzerland
- Prior art keywords
- powdery
- production
- sintered body
- semiconductor material
- crystalline material
- Prior art date
Links
- 239000002178 crystalline material Substances 0.000 title 1
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/64—Burning or sintering processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/16—Heating of the molten zone
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S264/00—Plastic and nonmetallic article shaping or treating: processes
- Y10S264/46—Molding using an electrical heat
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S65/00—Glass manufacturing
- Y10S65/04—Electric heat
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Inorganic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Ceramic Engineering (AREA)
- Mechanical Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Optics & Photonics (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Structural Engineering (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE793556X | 1954-06-30 | ||
DES41553A DE1215649B (de) | 1954-06-30 | 1954-11-13 | Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls |
Publications (1)
Publication Number | Publication Date |
---|---|
CH344218A true CH344218A (de) | 1960-01-31 |
Family
ID=25948515
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH344218D CH344218A (de) | 1954-06-30 | 1955-06-24 | Verfahren zur Herstellung eines Sinterkörpers aus pulverförmigem, kristallinem Stoff, insbesondere aus Halbleiterstoff |
Country Status (5)
Country | Link |
---|---|
US (1) | US2930098A (de) |
CH (1) | CH344218A (de) |
DE (1) | DE1215649B (de) |
FR (1) | FR1132101A (de) |
GB (1) | GB793556A (de) |
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1166716A (fr) * | 1957-02-12 | 1958-11-14 | Centre Nat Rech Scient | Procédé et dispositif pour la séparation, la purification et l'homogénéisation de différentes substances |
BE568830A (de) * | 1957-06-25 | |||
NL235481A (de) * | 1958-02-19 | |||
US3156549A (en) * | 1958-04-04 | 1964-11-10 | Du Pont | Method of melting silicon |
DE1102103B (de) * | 1958-04-30 | 1961-03-16 | Bosch Gmbh Robert | Verfahren zur Herstellung von Einkristallen und Vorrichtung zur Durchfuehrung des Verfahrens |
DE1094237B (de) * | 1958-07-24 | 1960-12-08 | Licentia Gmbh | Verfahren zur Verminderung der Verspannungen von Impfkristallen |
US3121630A (en) * | 1958-11-12 | 1964-02-18 | Heraeus Gmbh W C | Method and apparatus for sintering premolded objects |
US3121628A (en) * | 1959-01-08 | 1964-02-18 | Owens Illinois Glass Co | Manufacture of glass for electron tube envelopes |
NL249996A (de) * | 1959-04-07 | |||
US3222150A (en) * | 1960-03-11 | 1965-12-07 | Corning Glass Works | Method of making glass-to-metal seals |
NL124042C (de) * | 1960-03-11 | |||
US3026188A (en) * | 1960-04-11 | 1962-03-20 | Clevite Corp | Method and apparatus for growing single crystals |
FR1317646A (de) * | 1961-03-14 | 1963-05-08 | ||
DE1215111B (de) * | 1962-08-22 | 1966-04-28 | Siemens Ag | Vorrichtung zum Zonenschmelzen von in Stuecken vorliegendem Halbleitermaterial und Verfahren zum Betrieb der Vorrichtung |
US3238288A (en) * | 1963-10-31 | 1966-03-01 | Joseph C Mcguire | High temperature furnace |
NL6402629A (de) * | 1964-03-13 | 1965-09-14 | ||
US3457054A (en) * | 1966-03-21 | 1969-07-22 | Owens Illinois Inc | Vacuum forming glass articles with vented modules |
US3607166A (en) * | 1968-05-06 | 1971-09-21 | Sylvania Electric Prod | Manufacture of striation-free quartz tubing |
CA888377A (en) * | 1969-09-29 | 1971-12-14 | Canadian Westinghouse Company Limited | Vacuum induction heat treatment of long tubular products |
US3652245A (en) * | 1970-09-22 | 1972-03-28 | Amersil Inc | Furnace for making fused quartz hollow slugs |
GB1439496A (en) * | 1973-08-30 | 1976-06-16 | Standard Telephones Cables Ltd | Glass preparation |
US5436164A (en) * | 1990-11-15 | 1995-07-25 | Hemlock Semi-Conductor Corporation | Analytical method for particulate silicon |
US5108720A (en) * | 1991-05-20 | 1992-04-28 | Hemlock Semiconductor Corporation | Float zone processing of particulate silicon |
US5412185A (en) * | 1993-11-29 | 1995-05-02 | General Electric Company | Induction heating of polymer matrix composites in an autoclave |
FR3033974B1 (fr) * | 2015-03-16 | 2018-11-09 | Chopin Technologies | Dispositif de chauffage, systeme de test comprenant un tel dispositif et procede de mise en œuvre d'un systeme de test. |
DE102017218797A1 (de) * | 2017-10-20 | 2019-04-25 | Zf Friedrichshafen Ag | Strebe für eine adaptive Crash-Struktur, Adaptive Crash-Struktur, Fahrzeug, Verfahren zur Adaption wenigstens einer adaptiven Crash-Struktur und Verfahren zur Herstellung einer Strebe |
CN112038084B (zh) * | 2020-09-08 | 2022-05-17 | 安徽万磁电子有限公司 | 一种磁体生产用烧结工艺 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1301714A (en) * | 1913-09-09 | 1919-04-22 | Karl Kueppers | Method of and apparatus for forming glass tubes. |
US1549591A (en) * | 1925-03-21 | 1925-08-11 | Frederick S Mccullough | Method of heat treating porcelain |
US1794863A (en) * | 1928-08-03 | 1931-03-03 | Ajax Electrothermic Corp | Electric-furnace method |
US2112777A (en) * | 1935-06-18 | 1938-03-29 | Hauser Max | Method of producing silicon ware |
NL63276C (de) * | 1941-04-04 | |||
US2555450A (en) * | 1943-11-29 | 1951-06-05 | Lee Foundation For Nutritional | High-frequency dehydrating method and apparatus |
US2637091A (en) * | 1949-03-26 | 1953-05-05 | Carborundum Co | Bonded silicon carbide articles and method of making same |
US2737456A (en) * | 1951-02-09 | 1956-03-06 | Allied Prod Corp | Process of making powdered metal articles without briquetting |
NL168491B (de) * | 1951-11-16 | Roussel-Uclaf, Societe Anonyme Te Parijs. | ||
US2747971A (en) * | 1953-07-20 | 1956-05-29 | Westinghouse Electric Corp | Preparation of pure crystalline silicon |
-
1954
- 1954-11-13 DE DES41553A patent/DE1215649B/de active Pending
-
1955
- 1955-06-20 FR FR1132101D patent/FR1132101A/fr not_active Expired
- 1955-06-23 US US517414A patent/US2930098A/en not_active Expired - Lifetime
- 1955-06-24 CH CH344218D patent/CH344218A/de unknown
- 1955-06-29 GB GB18868/55A patent/GB793556A/en not_active Expired
Also Published As
Publication number | Publication date |
---|---|
US2930098A (en) | 1960-03-29 |
FR1132101A (fr) | 1957-03-05 |
GB793556A (en) | 1958-04-16 |
DE1215649B (de) | 1966-05-05 |
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