CH371187A - Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper - Google Patents

Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper

Info

Publication number
CH371187A
CH371187A CH4570657A CH4570657A CH371187A CH 371187 A CH371187 A CH 371187A CH 4570657 A CH4570657 A CH 4570657A CH 4570657 A CH4570657 A CH 4570657A CH 371187 A CH371187 A CH 371187A
Authority
CH
Switzerland
Prior art keywords
producing
semiconductor body
doped zone
doped
zone
Prior art date
Application number
CH4570657A
Other languages
English (en)
Inventor
Michael Smits Friedolf
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH371187A publication Critical patent/CH371187A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
    • C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
CH4570657A 1956-05-18 1957-05-03 Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper CH371187A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US585851A US2834697A (en) 1956-05-18 1956-05-18 Process for vapor-solid diffusion of a conductivity-type determining impurity in semiconductors

Publications (1)

Publication Number Publication Date
CH371187A true CH371187A (de) 1963-08-15

Family

ID=24343238

Family Applications (1)

Application Number Title Priority Date Filing Date
CH4570657A CH371187A (de) 1956-05-18 1957-05-03 Verfahren zur Herstellung einer dotierten Zone in einem Halbleiterkörper

Country Status (8)

Country Link
US (1) US2834697A (de)
AT (1) AT199225B (de)
BE (1) BE555455A (de)
CH (1) CH371187A (de)
DE (1) DE1034776B (de)
FR (1) FR1174076A (de)
GB (1) GB823317A (de)
NL (2) NL104094C (de)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB843267A (en) * 1956-09-14 1960-08-04 Ass Elect Ind Improvements relating to the preparation of semi-conductor materials
US3003900A (en) * 1957-11-12 1961-10-10 Pacific Semiconductors Inc Method for diffusing active impurities into semiconductor materials
DE1095401B (de) * 1958-04-16 1960-12-22 Standard Elektrik Lorenz Ag Verfahren zum Eindiffundieren von Fremdstoffen in einen Halbleiterkoerper zur Herstellung einer elektrischen Halbleiteranordnung
US3015591A (en) * 1958-07-18 1962-01-02 Itt Semi-conductor rectifiers and method of manufacture
US3007816A (en) * 1958-07-28 1961-11-07 Motorola Inc Decontamination process
NL254549A (de) * 1959-08-07
US3043575A (en) * 1959-11-24 1962-07-10 Siemens Ag Apparatus for producing electric semiconductor devices by joining area electrodes with semiconductor bodies
DE1159567B (de) * 1960-10-14 1963-12-19 Telefunken Patent Vorrichtung zum gleichzeitigen Herstellen ebener Diffusionsfronten in mehreren Halbleiterkoerpern, insbesondere fuer Transistoren oder Dioden
US3193419A (en) * 1960-12-30 1965-07-06 Texas Instruments Inc Outdiffusion method
US3148094A (en) * 1961-03-13 1964-09-08 Texas Instruments Inc Method of producing junctions by a relocation process
DE1138481C2 (de) * 1961-06-09 1963-05-22 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
DE1137807B (de) * 1961-06-09 1962-10-11 Siemens Ag Verfahren zur Herstellung von Halbleiteranordnungen durch einkristalline Abscheidung von Halbleitermaterial aus der Gasphase
US3215571A (en) * 1962-10-01 1965-11-02 Bell Telephone Labor Inc Fabrication of semiconductor bodies
GB1058753A (en) * 1962-11-02 1967-02-15 Ass Elect Ind Improvements relating to solid state devices
US3275557A (en) * 1963-11-13 1966-09-27 Philips Corp Method of making mercury-doped germanium semiconductor crystals
DE1280821B (de) * 1965-04-30 1968-10-24 Licentia Gmbh Vorrichtung zur Eindiffusion von Bor und/oder Phosphor in Halbleiterscheiben
US3949119A (en) * 1972-05-04 1976-04-06 Atomic Energy Of Canada Limited Method of gas doping of vacuum evaporated epitaxial silicon films
ES2331283B1 (es) * 2008-06-25 2010-10-05 Centro De Tecnologia Del Silicio Solar, S.L. (Centsil) Reactor de deposito de silicio de gran pureza para aplicaciones fotovoltaicas.

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices

Also Published As

Publication number Publication date
NL215875A (de)
NL104094C (de)
US2834697A (en) 1958-05-13
DE1034776B (de) 1958-07-24
FR1174076A (fr) 1959-03-05
AT199225B (de) 1958-08-25
GB823317A (en) 1959-11-11
BE555455A (de)

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