CH369519A - Verfahren zur Herstellung eines hochdotierten p-Bereiches an einem Halbleiterkörper - Google Patents

Verfahren zur Herstellung eines hochdotierten p-Bereiches an einem Halbleiterkörper

Info

Publication number
CH369519A
CH369519A CH6876859A CH6876859A CH369519A CH 369519 A CH369519 A CH 369519A CH 6876859 A CH6876859 A CH 6876859A CH 6876859 A CH6876859 A CH 6876859A CH 369519 A CH369519 A CH 369519A
Authority
CH
Switzerland
Prior art keywords
producing
region
semiconductor body
highly doped
doped
Prior art date
Application number
CH6876859A
Other languages
English (en)
Inventor
Emeis Reimer
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of CH369519A publication Critical patent/CH369519A/de

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C1/00—Making non-ferrous alloys
    • C22C1/02—Making non-ferrous alloys by melting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B30—PRESSES
    • B30B—PRESSES IN GENERAL
    • B30B11/00—Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses, tabletting presses
    • B30B11/34—Presses specially adapted for forming shaped articles from material in particulate or plastic state, e.g. briquetting presses, tabletting presses for coating articles, e.g. tablets
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49204—Contact or terminal manufacturing
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49204—Contact or terminal manufacturing
    • Y10T29/49208—Contact or terminal manufacturing by assembling plural parts
    • Y10T29/4921—Contact or terminal manufacturing by assembling plural parts with bonding
    • Y10T29/49211—Contact or terminal manufacturing by assembling plural parts with bonding of fused material
    • Y10T29/49213—Metal
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12528—Semiconductor component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12674—Ge- or Si-base component
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12771—Transition metal-base component
    • Y10T428/12861—Group VIII or IB metal-base component
    • Y10T428/12889—Au-base component

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Conductive Materials (AREA)
  • Die Bonding (AREA)
  • Silicon Compounds (AREA)
  • Powder Metallurgy (AREA)
CH6876859A 1958-02-04 1959-01-27 Verfahren zur Herstellung eines hochdotierten p-Bereiches an einem Halbleiterkörper CH369519A (de)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES0056823 1958-02-04
DES57723A DE1089074B (de) 1958-02-04 1958-04-05 Verfahren zur Erzeugung eines hochdotierten p-Bereiches und des zugehoerigen Kontaktes einer Halbleiteranordnung mittels Einlegieren

Publications (1)

Publication Number Publication Date
CH369519A true CH369519A (de) 1963-05-31

Family

ID=25995480

Family Applications (2)

Application Number Title Priority Date Filing Date
CH6876859A CH369519A (de) 1958-02-04 1959-01-27 Verfahren zur Herstellung eines hochdotierten p-Bereiches an einem Halbleiterkörper
CH7147959A CH375450A (de) 1958-02-04 1959-04-02 Verfahren zur Erzeugung eines hochdotierten p-Bereiches und des zugehörigen Kontaktes an einem Halbleiterkörper

Family Applications After (1)

Application Number Title Priority Date Filing Date
CH7147959A CH375450A (de) 1958-02-04 1959-04-02 Verfahren zur Erzeugung eines hochdotierten p-Bereiches und des zugehörigen Kontaktes an einem Halbleiterkörper

Country Status (6)

Country Link
US (1) US3009840A (de)
CH (2) CH369519A (de)
DE (2) DE1089074B (de)
FR (1) FR1228852A (de)
GB (2) GB905553A (de)
NL (2) NL237782A (de)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL113840C (de) * 1958-06-14
BE590792A (de) * 1959-05-12
US3068127A (en) * 1959-06-02 1962-12-11 Siemens Ag Method of producing a highly doped p-type zone and an appertaining contact on a semiconductor crystal
US3211595A (en) * 1959-11-02 1965-10-12 Hughes Aircraft Co P-type alloy bonding of semiconductors using a boron-gold alloy
DE1133834B (de) * 1960-09-21 1962-07-26 Siemens Ag Siliziumgleichrichter und Verfahren zu dessen Herstellung
NL270684A (de) * 1960-11-01
US3177054A (en) * 1960-12-14 1965-04-06 Nippon Electric Co Compound foil for connecting electrodes to semiconductor material
DE1240996B (de) * 1961-03-24 1967-05-24 Siemens Ag Verfahren zum Herstellen eines beiderseits hochdotierten pn-UEbergangs fuer Halbleiteranordnungen
NL274788A (de) * 1961-05-17
US3292130A (en) * 1961-07-28 1966-12-13 Texas Instruments Inc Resistor
US3155064A (en) * 1961-11-15 1964-11-03 Westinghouse Electric Corp Fusion mold fixture assembly
DE1246129B (de) * 1961-12-28 1967-08-03 Westinghouse Electric Corp Verfahren zum Herstellen eines Halbleiterbauelementes
NL300332A (de) * 1962-11-14
US3310443A (en) * 1963-09-06 1967-03-21 Theodore E Fessler Method of forming thin window drifted silicon charged particle detector
DE1278016B (de) * 1963-11-16 1968-09-19 Siemens Ag Halbleiterbauelement mit einem einkristallinen Halbleiterkoerper
DE1231824B (de) * 1964-07-04 1967-01-05 Danfoss As Kontaktanordnung fuer ein elektronisches Festkoerperschaltelement und Verfahren zu seiner Herstellung
US3382054A (en) * 1965-01-25 1968-05-07 Texas Instruments Inc Low melting point composite materials useful for brazing, soldering or the like
CH506188A (de) * 1970-09-02 1971-04-15 Ibm Feldeffekt-Transistor
JPS6481130A (en) * 1987-09-21 1989-03-27 Omron Tateisi Electronics Co Electrical contact
GB8818050D0 (en) * 1988-07-28 1988-09-01 Lilliwyte Sa Joining of ceramic components to metal components

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1577995A (en) * 1925-10-28 1926-03-23 Wadsworth Watch Case Co White-gold alloy
US2510546A (en) * 1944-12-01 1950-06-06 Joseph B Brennan Manufacture of precision articles from powdered material
US2791524A (en) * 1953-04-03 1957-05-07 Gen Electric Fabrication method for p-n junctions
NL91691C (de) * 1952-02-07
NL180750B (nl) * 1952-08-20 Bristol Myers Co Werkwijze voor het bereiden van een 7-amino-3-cefem-4-carbonzuur derivaat door een 7-acylamino-3-cefem-4-carbonzuur derivaat om te zetten.
US2725288A (en) * 1952-08-26 1955-11-29 Harry W Dodds Process and apparatus for fabricating metallic articles
NL92060C (de) * 1953-10-26
AT187556B (de) * 1954-03-05 1956-11-10 Western Electric Co Verfahren zur Herstellung eines Halbleiters mit einer PN-Verbindung
NL99619C (de) * 1955-06-28
DE1012696B (de) * 1954-07-06 1957-07-25 Siemens Ag Halbleiteruebergang zwischen Zonen verschiedenen Leitungstypus und Verfahren zur Herstellung des UEberganges
BE544843A (de) * 1955-02-25
US2763822A (en) * 1955-05-10 1956-09-18 Westinghouse Electric Corp Silicon semiconductor devices
NL103828C (de) * 1956-03-30

Also Published As

Publication number Publication date
CH375450A (de) 1964-02-29
DE1089074B (de) 1960-09-15
GB907303A (en) 1962-10-03
GB905553A (en) 1962-09-12
NL237782A (de) 1900-01-01
DE1067936B (de) 1959-10-29
NL235479A (de) 1900-01-01
US3009840A (en) 1961-11-21
FR1228852A (fr) 1960-09-02

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