FR1132101A - Procédé pour la fabrication d'un corps fritté à partir d'une matière cristalline pulvérulente, en particulier d'une matière semi-conductrice - Google Patents

Procédé pour la fabrication d'un corps fritté à partir d'une matière cristalline pulvérulente, en particulier d'une matière semi-conductrice

Info

Publication number
FR1132101A
FR1132101A FR1132101DA FR1132101A FR 1132101 A FR1132101 A FR 1132101A FR 1132101D A FR1132101D A FR 1132101DA FR 1132101 A FR1132101 A FR 1132101A
Authority
FR
France
Prior art keywords
production
sintered body
semiconductor material
crystalline material
pulverulent crystalline
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens AG
Original Assignee
Siemens Schuckertwerke AG
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens AG filed Critical Siemens Schuckertwerke AG
Application granted granted Critical
Publication of FR1132101A publication Critical patent/FR1132101A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B22—CASTING; POWDER METALLURGY
    • B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
    • B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
    • B22F3/10—Sintering only
    • B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/16—Heating of the molten zone
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S264/00—Plastic and nonmetallic article shaping or treating: processes
    • Y10S264/46—Molding using an electrical heat
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S65/00—Glass manufacturing
    • Y10S65/04—Electric heat

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Mechanical Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Structural Engineering (AREA)
  • Optics & Photonics (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
FR1132101D 1954-06-30 1955-06-20 Procédé pour la fabrication d'un corps fritté à partir d'une matière cristalline pulvérulente, en particulier d'une matière semi-conductrice Expired FR1132101A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE793556X 1954-06-30
DES41553A DE1215649B (de) 1954-06-30 1954-11-13 Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls

Publications (1)

Publication Number Publication Date
FR1132101A true FR1132101A (fr) 1957-03-05

Family

ID=25948515

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1132101D Expired FR1132101A (fr) 1954-06-30 1955-06-20 Procédé pour la fabrication d'un corps fritté à partir d'une matière cristalline pulvérulente, en particulier d'une matière semi-conductrice

Country Status (5)

Country Link
US (1) US2930098A (fr)
CH (1) CH344218A (fr)
DE (1) DE1215649B (fr)
FR (1) FR1132101A (fr)
GB (1) GB793556A (fr)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2870050A (en) * 1957-06-25 1959-01-20 Rca Corp Semiconductor devices and methods of making same
DE1094237B (de) * 1958-07-24 1960-12-08 Licentia Gmbh Verfahren zur Verminderung der Verspannungen von Impfkristallen
DE1102103B (de) * 1958-04-30 1961-03-16 Bosch Gmbh Robert Verfahren zur Herstellung von Einkristallen und Vorrichtung zur Durchfuehrung des Verfahrens
DE1147197B (de) * 1961-03-14 1963-04-18 Knapsack Ag Vorrichtung zum Reinigen von bei der Schmelztemperatur den elektrischen Strom nicht- oder schlecht-leitenden Stoffen durch Zonenschmelzen
DE1173871B (de) * 1957-02-12 1964-07-16 Centre Nat Rech Scient Verfahren zum Reinigen von Stoffen durch Zonenschmelzen
DE1191336B (de) * 1960-04-11 1965-04-22 Intermetall Zonenschmelzverfahren zum Umwandeln von mindestens einem polykristallinen Stab in einen Einkristall
DE1215111B (de) * 1962-08-22 1966-04-28 Siemens Ag Vorrichtung zum Zonenschmelzen von in Stuecken vorliegendem Halbleitermaterial und Verfahren zum Betrieb der Vorrichtung

Families Citing this family (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL126240C (fr) * 1958-02-19
US3156549A (en) * 1958-04-04 1964-11-10 Du Pont Method of melting silicon
US3121630A (en) * 1958-11-12 1964-02-18 Heraeus Gmbh W C Method and apparatus for sintering premolded objects
US3121628A (en) * 1959-01-08 1964-02-18 Owens Illinois Glass Co Manufacture of glass for electron tube envelopes
NL249996A (fr) * 1959-04-07
NL124042C (fr) * 1960-03-11
US3222150A (en) * 1960-03-11 1965-12-07 Corning Glass Works Method of making glass-to-metal seals
US3238288A (en) * 1963-10-31 1966-03-01 Joseph C Mcguire High temperature furnace
NL6402629A (fr) * 1964-03-13 1965-09-14
US3457054A (en) * 1966-03-21 1969-07-22 Owens Illinois Inc Vacuum forming glass articles with vented modules
US3607166A (en) * 1968-05-06 1971-09-21 Sylvania Electric Prod Manufacture of striation-free quartz tubing
CA888377A (en) * 1969-09-29 1971-12-14 Canadian Westinghouse Company Limited Vacuum induction heat treatment of long tubular products
US3652245A (en) * 1970-09-22 1972-03-28 Amersil Inc Furnace for making fused quartz hollow slugs
GB1439496A (en) * 1973-08-30 1976-06-16 Standard Telephones Cables Ltd Glass preparation
US5436164A (en) * 1990-11-15 1995-07-25 Hemlock Semi-Conductor Corporation Analytical method for particulate silicon
US5108720A (en) * 1991-05-20 1992-04-28 Hemlock Semiconductor Corporation Float zone processing of particulate silicon
US5412185A (en) * 1993-11-29 1995-05-02 General Electric Company Induction heating of polymer matrix composites in an autoclave
FR3033974B1 (fr) * 2015-03-16 2018-11-09 Chopin Technologies Dispositif de chauffage, systeme de test comprenant un tel dispositif et procede de mise en œuvre d'un systeme de test.
DE102017218797A1 (de) * 2017-10-20 2019-04-25 Zf Friedrichshafen Ag Strebe für eine adaptive Crash-Struktur, Adaptive Crash-Struktur, Fahrzeug, Verfahren zur Adaption wenigstens einer adaptiven Crash-Struktur und Verfahren zur Herstellung einer Strebe
CN112038084B (zh) * 2020-09-08 2022-05-17 安徽万磁电子有限公司 一种磁体生产用烧结工艺

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1301714A (en) * 1913-09-09 1919-04-22 Karl Kueppers Method of and apparatus for forming glass tubes.
US1549591A (en) * 1925-03-21 1925-08-11 Frederick S Mccullough Method of heat treating porcelain
US1794863A (en) * 1928-08-03 1931-03-03 Ajax Electrothermic Corp Electric-furnace method
US2112777A (en) * 1935-06-18 1938-03-29 Hauser Max Method of producing silicon ware
FR957542A (fr) * 1941-04-04 1950-02-23
US2555450A (en) * 1943-11-29 1951-06-05 Lee Foundation For Nutritional High-frequency dehydrating method and apparatus
US2637091A (en) * 1949-03-26 1953-05-05 Carborundum Co Bonded silicon carbide articles and method of making same
US2737456A (en) * 1951-02-09 1956-03-06 Allied Prod Corp Process of making powdered metal articles without briquetting
BE510303A (fr) * 1951-11-16
US2747971A (en) * 1953-07-20 1956-05-29 Westinghouse Electric Corp Preparation of pure crystalline silicon

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1173871B (de) * 1957-02-12 1964-07-16 Centre Nat Rech Scient Verfahren zum Reinigen von Stoffen durch Zonenschmelzen
US2870050A (en) * 1957-06-25 1959-01-20 Rca Corp Semiconductor devices and methods of making same
DE1102103B (de) * 1958-04-30 1961-03-16 Bosch Gmbh Robert Verfahren zur Herstellung von Einkristallen und Vorrichtung zur Durchfuehrung des Verfahrens
DE1094237B (de) * 1958-07-24 1960-12-08 Licentia Gmbh Verfahren zur Verminderung der Verspannungen von Impfkristallen
DE1191336B (de) * 1960-04-11 1965-04-22 Intermetall Zonenschmelzverfahren zum Umwandeln von mindestens einem polykristallinen Stab in einen Einkristall
DE1147197B (de) * 1961-03-14 1963-04-18 Knapsack Ag Vorrichtung zum Reinigen von bei der Schmelztemperatur den elektrischen Strom nicht- oder schlecht-leitenden Stoffen durch Zonenschmelzen
DE1215111B (de) * 1962-08-22 1966-04-28 Siemens Ag Vorrichtung zum Zonenschmelzen von in Stuecken vorliegendem Halbleitermaterial und Verfahren zum Betrieb der Vorrichtung

Also Published As

Publication number Publication date
DE1215649B (de) 1966-05-05
GB793556A (en) 1958-04-16
CH344218A (de) 1960-01-31
US2930098A (en) 1960-03-29

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