FR1127036A - Procédé de fabrication d'alliages semi-conducteurs - Google Patents

Procédé de fabrication d'alliages semi-conducteurs

Info

Publication number
FR1127036A
FR1127036A FR1127036DA FR1127036A FR 1127036 A FR1127036 A FR 1127036A FR 1127036D A FR1127036D A FR 1127036DA FR 1127036 A FR1127036 A FR 1127036A
Authority
FR
France
Prior art keywords
manufacturing process
semiconductor alloy
alloy manufacturing
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Radio Corporation of America
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp, Radio Corporation of America filed Critical RCA Corp
Application granted granted Critical
Publication of FR1127036A publication Critical patent/FR1127036A/fr
Expired legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
FR1127036D 1954-06-10 1955-03-30 Procédé de fabrication d'alliages semi-conducteurs Expired FR1127036A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US1127036XA 1954-06-10 1954-06-10

Publications (1)

Publication Number Publication Date
FR1127036A true FR1127036A (fr) 1956-12-06

Family

ID=22345411

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1127036D Expired FR1127036A (fr) 1954-06-10 1955-03-30 Procédé de fabrication d'alliages semi-conducteurs

Country Status (1)

Country Link
FR (1) FR1127036A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices
US2998335A (en) * 1956-02-04 1961-08-29 Telefunken Gmbh Method and apparatusfor growing single crystals from molten bodies
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2998335A (en) * 1956-02-04 1961-08-29 Telefunken Gmbh Method and apparatusfor growing single crystals from molten bodies
US3002821A (en) * 1956-10-22 1961-10-03 Texas Instruments Inc Means for continuous fabrication of graded junction transistors
US2879189A (en) * 1956-11-21 1959-03-24 Shockley William Method for growing junction semi-conductive devices

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