NL126240C - - Google Patents

Info

Publication number
NL126240C
NL126240C NL126240DA NL126240C NL 126240 C NL126240 C NL 126240C NL 126240D A NL126240D A NL 126240DA NL 126240 C NL126240 C NL 126240C
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL126240C publication Critical patent/NL126240C/xx

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/34—Single-crystal growth by zone-melting; Refining by zone-melting characterised by the seed, e.g. by its crystallographic orientation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/901—Levitation, reduced gravity, microgravity, space
    • Y10S117/902—Specified orientation, shape, crystallography, or size of seed or substrate
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/911—Seed or rod holders
NL126240D 1958-02-19 NL126240C (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1958S0057004 DE1094710C2 (de) 1958-02-19 1958-02-19 Verfahren zur Zuechtung von Einkristallen durch tiegelfreies Zonenschmelzen

Publications (1)

Publication Number Publication Date
NL126240C true NL126240C (fr)

Family

ID=7491503

Family Applications (2)

Application Number Title Priority Date Filing Date
NL235481D NL235481A (fr) 1958-02-19
NL126240D NL126240C (fr) 1958-02-19

Family Applications Before (1)

Application Number Title Priority Date Filing Date
NL235481D NL235481A (fr) 1958-02-19

Country Status (7)

Country Link
US (1) US3159459A (fr)
BE (1) BE575837A (fr)
CH (1) CH364244A (fr)
DE (1) DE1094710C2 (fr)
FR (1) FR1214641A (fr)
GB (1) GB888148A (fr)
NL (2) NL126240C (fr)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1217339B (de) * 1961-11-29 1966-05-26 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen von Halbleitermaterial
DE1208292B (de) * 1963-03-29 1966-01-05 Siemens Ag Vorrichtung zum tiegelfreien Zonenschmelzen von Halbleitermaterial
US3275417A (en) * 1963-10-15 1966-09-27 Texas Instruments Inc Production of dislocation-free silicon single crystals
DE1218404B (de) * 1964-02-01 1966-06-08 Siemens Ag Verfahren zum tiegelfreien Zonenschmelzen eines kristallinen Stabes, insbesondere Halbleiterstabes
US3337303A (en) * 1965-03-01 1967-08-22 Elmat Corp Crystal growing apparatus
DE1960088C3 (de) * 1969-11-29 1974-07-25 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum tiegelfreien Zonenschmelzen eines kristallinen Stabes
US3989468A (en) * 1973-11-22 1976-11-02 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
USRE29824E (en) * 1973-11-22 1978-11-07 Siemens Aktiengesellschaft Apparatus for crucible-free zone melting of semiconductor crystal rods
DE2358300C3 (de) * 1973-11-22 1978-07-20 Siemens Ag, 1000 Berlin Und 8000 Muenchen Vorrichtung zum senkrechten Halten eines Halbleiterkristallstabes beim tiegelfreien Zonenschmelzen

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE894293C (de) * 1951-06-29 1953-10-22 Western Electric Co Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial
BE510303A (fr) * 1951-11-16
BE525102A (fr) * 1952-12-17 1900-01-01
DE1061527B (de) * 1953-02-14 1959-07-16 Siemens Ag Verfahren zum zonenweisen Umschmelzen von Staeben und anderen langgestreckten Werkstuecken
US2972525A (en) * 1953-02-26 1961-02-21 Siemens Ag Crucible-free zone melting method and apparatus for producing and processing a rod-shaped body of crystalline substance, particularly semiconductor substance
DE1215649B (de) * 1954-06-30 1966-05-05 Siemens Ag Verfahren zum Herstellen eines extrem reinen, stabfoermigen Halbleiterkristalls
NL234451A (fr) * 1957-12-27

Also Published As

Publication number Publication date
FR1214641A (fr) 1960-04-11
DE1094710B (de) 1960-12-15
US3159459A (en) 1964-12-01
BE575837A (fr) 1959-08-18
GB888148A (en) 1962-01-24
CH364244A (de) 1962-09-15
NL235481A (fr)
DE1094710C2 (de) 1969-02-20

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