CH479163A - Verfahren zum Herstellen eines Halbleiterbauelementes - Google Patents

Verfahren zum Herstellen eines Halbleiterbauelementes

Info

Publication number
CH479163A
CH479163A CH1709368A CH1709368A CH479163A CH 479163 A CH479163 A CH 479163A CH 1709368 A CH1709368 A CH 1709368A CH 1709368 A CH1709368 A CH 1709368A CH 479163 A CH479163 A CH 479163A
Authority
CH
Switzerland
Prior art keywords
manufacturing
semiconductor component
semiconductor
component
Prior art date
Application number
CH1709368A
Other languages
English (en)
Inventor
Richard Chenette Eugene
Edwards Roger
Alan Pedersen Richard
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of CH479163A publication Critical patent/CH479163A/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761Vertical bipolar transistor in combination with diodes only
    • H01L27/0766Vertical bipolar transistor in combination with diodes only with Schottky diodes only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
CH1709368A 1967-11-15 1968-11-15 Verfahren zum Herstellen eines Halbleiterbauelementes CH479163A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US68323867A 1967-11-15 1967-11-15

Publications (1)

Publication Number Publication Date
CH479163A true CH479163A (de) 1969-09-30

Family

ID=24743141

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1709368A CH479163A (de) 1967-11-15 1968-11-15 Verfahren zum Herstellen eines Halbleiterbauelementes

Country Status (9)

Country Link
AT (1) AT302417B (de)
BE (1) BE723876A (de)
CH (1) CH479163A (de)
DE (1) DE1808342A1 (de)
ES (1) ES360641A1 (de)
FR (1) FR1591489A (de)
GB (1) GB1252565A (de)
NL (1) NL6816152A (de)
SE (1) SE341222B (de)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2064084A1 (de) * 1969-12-30 1971-07-08 Ibm Transistor mit Schottky-Sperrschicht
DE2601131A1 (de) * 1975-04-17 1976-10-28 Agency Ind Science Techn Halbleitereinrichtungen vom druckkontakt-typ
EP0005185A1 (de) * 1978-05-01 1979-11-14 International Business Machines Corporation Verfahren zum gleichzeitigen Herstellen von Schottky-Sperrschichtdioden und ohmschen Kontakten nach dotierten Halbleiterzonen

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA965189A (en) * 1972-01-03 1975-03-25 Signetics Corporation Semiconductor structure using platinel silicide as a schottky barrier diode and method

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2064084A1 (de) * 1969-12-30 1971-07-08 Ibm Transistor mit Schottky-Sperrschicht
FR2072116A1 (de) * 1969-12-30 1971-09-24 Ibm
DE2601131A1 (de) * 1975-04-17 1976-10-28 Agency Ind Science Techn Halbleitereinrichtungen vom druckkontakt-typ
EP0005185A1 (de) * 1978-05-01 1979-11-14 International Business Machines Corporation Verfahren zum gleichzeitigen Herstellen von Schottky-Sperrschichtdioden und ohmschen Kontakten nach dotierten Halbleiterzonen

Also Published As

Publication number Publication date
DE1808342B2 (de) 1970-09-10
AT302417B (de) 1972-10-10
SE341222B (de) 1971-12-20
NL6816152A (de) 1969-05-19
ES360641A1 (es) 1970-07-16
GB1252565A (de) 1971-11-10
BE723876A (de) 1969-04-16
DE1808342A1 (de) 1970-04-09
FR1591489A (de) 1970-04-27

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Legal Events

Date Code Title Description
PL Patent ceased