CH474857A - Verfahren zum Herstellen eines Germanium-Planar-Transistors - Google Patents
Verfahren zum Herstellen eines Germanium-Planar-TransistorsInfo
- Publication number
- CH474857A CH474857A CH1463867A CH1463867A CH474857A CH 474857 A CH474857 A CH 474857A CH 1463867 A CH1463867 A CH 1463867A CH 1463867 A CH1463867 A CH 1463867A CH 474857 A CH474857 A CH 474857A
- Authority
- CH
- Switzerland
- Prior art keywords
- manufacturing
- planar transistor
- germanium
- germanium planar
- transistor
- Prior art date
Links
- 229910052732 germanium Inorganic materials 0.000 title 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09B—ORGANIC DYES OR CLOSELY-RELATED COMPOUNDS FOR PRODUCING DYES, e.g. PIGMENTS; MORDANTS; LAKES
- C09B43/00—Preparation of azo dyes from other azo compounds
- C09B43/32—Preparation of azo dyes from other azo compounds by reacting carboxylic or sulfonic groups, or derivatives thereof, with amines; by reacting keto-groups with amines
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/106—Masks, special
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/151—Simultaneous diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/965—Shaped junction formation
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Coloring (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CH1288266A CH482795A (de) | 1966-09-06 | 1966-09-06 | Verfahren zur Herstellung neuer Monoazofarbstoffpigmente |
DES0106631 | 1966-10-21 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH474857A true CH474857A (de) | 1969-06-30 |
Family
ID=25711163
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1288266A CH482795A (de) | 1966-09-06 | 1966-09-06 | Verfahren zur Herstellung neuer Monoazofarbstoffpigmente |
CH1463867A CH474857A (de) | 1966-09-06 | 1967-10-19 | Verfahren zum Herstellen eines Germanium-Planar-Transistors |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1288266A CH482795A (de) | 1966-09-06 | 1966-09-06 | Verfahren zur Herstellung neuer Monoazofarbstoffpigmente |
Country Status (8)
Country | Link |
---|---|
US (2) | US3509123A (de) |
JP (1) | JPS4820950B1 (de) |
BE (1) | BE703534A (de) |
CH (2) | CH482795A (de) |
DE (2) | DE1564747A1 (de) |
GB (2) | GB1154057A (de) |
NL (2) | NL6712166A (de) |
SE (1) | SE340486B (de) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4006046A (en) * | 1975-04-21 | 1977-02-01 | Trw Inc. | Method for compensating for emitter-push effect in the fabrication of transistors |
AT350998B (de) * | 1976-03-18 | 1979-06-25 | Basf Ag | Farbstoffzubereitungen fuer cellulose und cellulosehaltiges textilmaterial |
US4978636A (en) * | 1989-12-26 | 1990-12-18 | Motorola Inc. | Method of making a semiconductor diode |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1213553B (de) * | 1962-09-20 | 1966-03-31 | Bayer Ag | Verfahren zur Herstellung von wasserunloeslichen Azofarbstoffen |
-
1966
- 1966-09-06 CH CH1288266A patent/CH482795A/de not_active IP Right Cessation
- 1966-10-21 DE DE19661564747 patent/DE1564747A1/de active Pending
-
1967
- 1967-06-28 SE SE09565/67*A patent/SE340486B/xx unknown
- 1967-08-26 DE DE19671644115 patent/DE1644115A1/de active Pending
- 1967-08-30 US US664267A patent/US3509123A/en not_active Expired - Lifetime
- 1967-09-05 NL NL6712166A patent/NL6712166A/xx unknown
- 1967-09-05 NL NL6712160A patent/NL6712160A/xx unknown
- 1967-09-06 GB GB40667/67A patent/GB1154057A/en not_active Expired
- 1967-09-06 BE BE703534D patent/BE703534A/xx unknown
- 1967-10-19 US US676482A patent/US3586548A/en not_active Expired - Lifetime
- 1967-10-19 CH CH1463867A patent/CH474857A/de not_active IP Right Cessation
- 1967-10-20 GB GB47803/67A patent/GB1178058A/en not_active Expired
- 1967-10-21 JP JP42067753A patent/JPS4820950B1/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
NL6712160A (de) | 1968-04-22 |
GB1154057A (en) | 1969-06-04 |
DE1564747A1 (de) | 1970-02-12 |
NL6712166A (de) | 1968-03-07 |
US3586548A (en) | 1971-06-22 |
BE703534A (de) | 1968-03-06 |
JPS4820950B1 (de) | 1973-06-25 |
SE340486B (de) | 1971-11-22 |
CH482795A (de) | 1969-12-15 |
DE1644115A1 (de) | 1970-10-29 |
GB1178058A (en) | 1970-01-14 |
US3509123A (en) | 1970-04-28 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE1938365B2 (de) | Verfahren zum herstellen eines transistors | |
CH505473A (de) | Verfahren zum Herstellen einer Halbleitervorrichtung | |
DE1775766B2 (de) | Verfahren zum herstellen eines elastischen lagerungselements | |
AT252314B (de) | Verfahren zum Herstellen eines Quarzkristall-Bauelementes | |
DE1803028B2 (de) | Verfahren zum herstellen eines feldeffekttransistors | |
CH490511A (de) | Verfahren zum Herstellen eines Formstückes | |
CH403436A (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
CH498490A (de) | Verfahren zum Herstellen eines Halbleiterbauelementes | |
CH447393A (de) | Verfahren zum Herstellen von Feldeffekttransistoren | |
AT264596B (de) | Verfahren zum Herstellen eines Transistors | |
AT258364B (de) | Verfahren zum Herstellen von Halbleiteranordnungen | |
CH416575A (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
CH468855A (de) | Verfahren zum Tiefziehen | |
CH474857A (de) | Verfahren zum Herstellen eines Germanium-Planar-Transistors | |
CH457630A (de) | Verfahren zum Herstellen eines Halbleiterdetektors | |
CH483121A (de) | Verfahren zum Herstellen eines Germaniumtransistors | |
CH414019A (de) | Verfahren zum Herstellen eines Halbleiter-Bauelements | |
CH482299A (de) | Verfahren zum Dotieren eines Siliciumkörpers | |
CH479163A (de) | Verfahren zum Herstellen eines Halbleiterbauelementes | |
CH509666A (de) | Verfahren zum Herstellen eines Germanium-Planartransistors | |
CH474859A (de) | Verfahren zum Herstellen einer Halbleitervorrichtung | |
CH408223A (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
AT267613B (de) | Verfahren zum Herstellen eines Transistors | |
CH490737A (de) | Verfahren zum Herstellen einer Halbleiteranordnung | |
CH421303A (de) | Verfahren zum Herstellen einer Halbleiteranordnung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PL | Patent ceased |