AT267613B - Verfahren zum Herstellen eines Transistors - Google Patents

Verfahren zum Herstellen eines Transistors

Info

Publication number
AT267613B
AT267613B AT475467A AT475467A AT267613B AT 267613 B AT267613 B AT 267613B AT 475467 A AT475467 A AT 475467A AT 475467 A AT475467 A AT 475467A AT 267613 B AT267613 B AT 267613B
Authority
AT
Austria
Prior art keywords
transistor
manufacturing
Prior art date
Application number
AT475467A
Other languages
English (en)
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag filed Critical Siemens Ag
Application granted granted Critical
Publication of AT267613B publication Critical patent/AT267613B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)
AT475467A 1966-05-23 1967-05-22 Verfahren zum Herstellen eines Transistors AT267613B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE1966S0103928 DE1564608B2 (de) 1966-05-23 1966-05-23 Verfahren zum herstellen eines transistors

Publications (1)

Publication Number Publication Date
AT267613B true AT267613B (de) 1969-01-10

Family

ID=7525526

Family Applications (1)

Application Number Title Priority Date Filing Date
AT475467A AT267613B (de) 1966-05-23 1967-05-22 Verfahren zum Herstellen eines Transistors

Country Status (7)

Country Link
US (1) US3535771A (de)
AT (1) AT267613B (de)
CH (1) CH500590A (de)
DE (1) DE1564608B2 (de)
GB (1) GB1137373A (de)
NL (1) NL6703638A (de)
SE (1) SE356636B (de)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2019655A1 (de) * 1969-04-25 1970-11-12 Gen Electric Verfahren zur Halbleiterherstellung und zur Herstellung eines dotierten metallischenLeiters

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4213807A (en) * 1979-04-20 1980-07-22 Rca Corporation Method of fabricating semiconductor devices

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL107344C (de) * 1955-03-23
US2856320A (en) * 1955-09-08 1958-10-14 Ibm Method of making transistor with welded collector
US2967793A (en) * 1959-02-24 1961-01-10 Westinghouse Electric Corp Semiconductor devices with bi-polar injection characteristics
NL252131A (de) * 1959-06-30
US3319138A (en) * 1962-11-27 1967-05-09 Texas Instruments Inc Fast switching high current avalanche transistor
US3341375A (en) * 1964-07-08 1967-09-12 Ibm Fabrication technique

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2019655A1 (de) * 1969-04-25 1970-11-12 Gen Electric Verfahren zur Halbleiterherstellung und zur Herstellung eines dotierten metallischenLeiters

Also Published As

Publication number Publication date
GB1137373A (en) 1968-12-18
DE1564608B2 (de) 1976-11-18
SE356636B (de) 1973-05-28
DE1564608A1 (de) 1970-05-14
US3535771A (en) 1970-10-27
CH500590A (de) 1970-12-15
NL6703638A (de) 1967-11-24

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