NL204025A - - Google Patents
Info
- Publication number
- NL204025A NL204025A NL204025DA NL204025A NL 204025 A NL204025 A NL 204025A NL 204025D A NL204025D A NL 204025DA NL 204025 A NL204025 A NL 204025A
- Authority
- NL
- Netherlands
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B23/00—Single-crystal growth by condensing evaporated or sublimed materials
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
- Y10S252/951—Doping agent source material for vapor transport
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US496202A US3028655A (en) | 1955-03-23 | 1955-03-23 | Semiconductive device |
| US496201A US2868678A (en) | 1955-03-23 | 1955-03-23 | Method of forming large area pn junctions |
| US109934A US3202887A (en) | 1955-03-23 | 1961-05-15 | Mesa-transistor with impurity concentration in the base decreasing toward collector junction |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| NL204025A true NL204025A (de) |
Family
ID=27380743
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL107344D NL107344C (de) | 1955-03-23 | ||
| NL204025D NL204025A (de) | 1955-03-23 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| NL107344D NL107344C (de) | 1955-03-23 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US2868678A (de) |
| BE (1) | BE546222A (de) |
| CH (2) | CH345077A (de) |
| DE (1) | DE1056747C2 (de) |
| FR (1) | FR1147153A (de) |
| GB (2) | GB809641A (de) |
| NL (2) | NL204025A (de) |
Families Citing this family (33)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2950220A (en) * | 1956-03-13 | 1960-08-23 | Battelle Development Corp | Preparation of p-n junctions by the decomposition of compounds |
| US2954308A (en) * | 1956-05-21 | 1960-09-27 | Ibm | Semiconductor impurity diffusion |
| DE1170555B (de) * | 1956-07-23 | 1964-05-21 | Siemens Ag | Verfahren zum Herstellen eines Halbleiter-bauelements mit drei Zonen abwechselnd entgegengesetzten Leitungstyps |
| US3145328A (en) * | 1957-04-29 | 1964-08-18 | Raytheon Co | Methods of preventing channel formation on semiconductive bodies |
| NL237225A (de) * | 1958-03-19 | |||
| US2974072A (en) * | 1958-06-27 | 1961-03-07 | Ibm | Semiconductor connection fabrication |
| US3025192A (en) * | 1959-01-02 | 1962-03-13 | Norton Co | Silicon carbide crystals and processes and furnaces for making them |
| NL246971A (de) * | 1959-01-02 | 1900-01-01 | ||
| DE1208012C2 (de) * | 1959-08-06 | 1966-10-20 | Telefunken Patent | Flaechentransistor fuer hohe Frequenzen mit einer Begrenzung der Emission des Emitters und Verfahren zum Herstellen |
| GB930533A (en) * | 1959-09-11 | 1963-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| US3242394A (en) * | 1960-05-02 | 1966-03-22 | Texas Instruments Inc | Voltage variable resistor |
| NL269345A (de) * | 1960-09-19 | |||
| DE1414898A1 (de) * | 1960-11-09 | 1969-01-09 | Lucas Industries Ltd | Verfahren zur Herstellung von Halbleitern |
| US3116184A (en) * | 1960-12-16 | 1963-12-31 | Bell Telephone Labor Inc | Etching of germanium surfaces prior to evaporation of aluminum |
| US3166448A (en) * | 1961-04-07 | 1965-01-19 | Clevite Corp | Method for producing rib transistor |
| NL276751A (de) * | 1961-04-10 | |||
| DE1166379B (de) * | 1961-05-12 | 1964-03-26 | Raytheon Co | Hochfrequenztransistor und Verfahren zu seinem Herstellen |
| US3287611A (en) * | 1961-08-17 | 1966-11-22 | Gen Motors Corp | Controlled conducting region geometry in semiconductor devices |
| US3180755A (en) * | 1962-02-05 | 1965-04-27 | Gen Motors Corp | Method of diffusing boron into silicon wafers |
| US3175975A (en) * | 1962-04-19 | 1965-03-30 | Bell Telephone Labor Inc | Heat treatment of iii-v compound semiconductors |
| US3239393A (en) * | 1962-12-31 | 1966-03-08 | Ibm | Method for producing semiconductor articles |
| US3249831A (en) * | 1963-01-04 | 1966-05-03 | Westinghouse Electric Corp | Semiconductor controlled rectifiers with a p-n junction having a shallow impurity concentration gradient |
| US3165430A (en) * | 1963-01-21 | 1965-01-12 | Siliconix Inc | Method of ultra-fine semiconductor manufacture |
| US3274462A (en) * | 1963-11-13 | 1966-09-20 | Jr Keats A Pullen | Structural configuration for fieldeffect and junction transistors |
| US3283218A (en) * | 1964-04-03 | 1966-11-01 | Philco Corp | High frequency diode having semiconductive mesa |
| US3337780A (en) * | 1964-05-21 | 1967-08-22 | Bell & Howell Co | Resistance oriented semiconductor strain gage with barrier isolated element |
| DE1439480B2 (de) * | 1964-12-01 | 1976-07-08 | Siemens AG, 1000 Berlin und 8000 München | Transistor und verfahren zu seiner herstellung |
| DE1564608B2 (de) * | 1966-05-23 | 1976-11-18 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum herstellen eines transistors |
| US3473980A (en) * | 1966-10-11 | 1969-10-21 | Bell Telephone Labor Inc | Significant impurity sources for solid state diffusion |
| US3852128A (en) * | 1969-02-22 | 1974-12-03 | Licentia Gmbh | Method of diffusing impurities into semiconductor wafers |
| US3650854A (en) * | 1970-08-03 | 1972-03-21 | Ibm | Method of fabricating a transistor having improved emitter-base junction breakdown voltage characteristics |
| US4111719A (en) * | 1976-12-06 | 1978-09-05 | International Business Machines Corporation | Minimization of misfit dislocations in silicon by double implantation of arsenic and germanium |
| FR2471668A1 (fr) * | 1979-12-14 | 1981-06-19 | Silicium Semiconducteur Ssc | Procede de diffusion de phosphore dans un semi-conducteur et procede d'obtention de phosphure de silicium |
Family Cites Families (23)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2362545A (en) * | 1942-01-29 | 1944-11-14 | Bell Telephone Labor Inc | Selenium rectifier and method of making it |
| US2731366A (en) * | 1948-12-28 | 1956-01-17 | Libbey Owens Ford Glass Co | Method of vapor depositing coatings of aluminum |
| DE883784C (de) * | 1949-04-06 | 1953-06-03 | Sueddeutsche App Fabrik G M B | Verfahren zur Herstellung von Flaechengleichrichtern und Kristallverstaerkerschichten aus Elementen |
| US2666814A (en) * | 1949-04-27 | 1954-01-19 | Bell Telephone Labor Inc | Semiconductor translating device |
| US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
| DE840148C (de) * | 1949-09-11 | 1952-05-29 | Edgar Duemig | Furnieraderhobel |
| US2561411A (en) * | 1950-03-08 | 1951-07-24 | Bell Telephone Labor Inc | Semiconductor signal translating device |
| US2697269A (en) * | 1950-07-24 | 1954-12-21 | Bell Telephone Labor Inc | Method of making semiconductor translating devices |
| NL99536C (de) * | 1951-03-07 | 1900-01-01 | ||
| GB728244A (en) * | 1951-10-19 | 1955-04-13 | Gen Electric | Improvements in and relating to germanium photocells |
| NL168491B (de) * | 1951-11-16 | Roussel-Uclaf, Societe Anonyme Te Parijs. | ||
| US2736849A (en) * | 1951-12-31 | 1956-02-28 | Hazeltine Research Inc | Junction-type transistors |
| US2695852A (en) * | 1952-02-15 | 1954-11-30 | Bell Telephone Labor Inc | Fabrication of semiconductors for signal translating devices |
| US2793145A (en) * | 1952-06-13 | 1957-05-21 | Sylvania Electric Prod | Method of forming a junction transistor |
| BE524233A (de) * | 1952-11-14 | |||
| US2705767A (en) * | 1952-11-18 | 1955-04-05 | Gen Electric | P-n junction transistor |
| US2784121A (en) * | 1952-11-20 | 1957-03-05 | Bell Telephone Labor Inc | Method of fabricating semiconductor bodies for translating devices |
| BE524899A (de) * | 1952-12-16 | |||
| US2840494A (en) * | 1952-12-31 | 1958-06-24 | Henry W Parker | Manufacture of transistors |
| FR1098372A (fr) * | 1953-05-22 | 1955-07-25 | Rca Corp | Dispositifs semi-conducteurs |
| US2811653A (en) * | 1953-05-22 | 1957-10-29 | Rca Corp | Semiconductor devices |
| US2821493A (en) * | 1954-03-18 | 1958-01-28 | Hughes Aircraft Co | Fused junction transistors with regrown base regions |
| US2736847A (en) * | 1954-05-10 | 1956-02-28 | Hughes Aircraft Co | Fused-junction silicon diodes |
-
0
- NL NL107344D patent/NL107344C/xx active
- NL NL204025D patent/NL204025A/xx unknown
- BE BE546222D patent/BE546222A/xx unknown
-
1955
- 1955-03-23 US US496201A patent/US2868678A/en not_active Expired - Lifetime
- 1955-03-23 US US496202A patent/US3028655A/en not_active Expired - Lifetime
-
1956
- 1956-02-25 DE DE1956W0018524 patent/DE1056747C2/de not_active Expired
- 1956-03-01 FR FR1147153D patent/FR1147153A/fr not_active Expired
- 1956-03-13 GB GB7810/56A patent/GB809641A/en not_active Expired
- 1956-03-13 GB GB7811/56A patent/GB809642A/en not_active Expired
- 1956-03-21 CH CH345077D patent/CH345077A/fr unknown
-
1957
- 1957-02-18 CH CH356538D patent/CH356538A/de unknown
-
1961
- 1961-05-15 US US109934A patent/US3202887A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE1056747C2 (de) | 1959-10-15 |
| US3202887A (en) | 1965-08-24 |
| GB809641A (en) | 1959-02-25 |
| US3028655A (en) | 1962-04-10 |
| NL107344C (de) | |
| FR1147153A (fr) | 1957-11-20 |
| GB809642A (en) | 1959-02-25 |
| BE546222A (de) | |
| US2868678A (en) | 1959-01-13 |
| CH345077A (fr) | 1960-03-15 |
| CH356538A (de) | 1961-08-31 |
| DE1056747B (de) | 1959-05-06 |