FR1098372A - Dispositifs semi-conducteurs - Google Patents
Dispositifs semi-conducteursInfo
- Publication number
- FR1098372A FR1098372A FR1098372DA FR1098372A FR 1098372 A FR1098372 A FR 1098372A FR 1098372D A FR1098372D A FR 1098372DA FR 1098372 A FR1098372 A FR 1098372A
- Authority
- FR
- France
- Prior art keywords
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/02—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt
- C30B15/04—Single-crystal growth by pulling from a melt, e.g. Czochralski method adding crystallising materials or reactants forming it in situ to the melt adding doping materials, e.g. for n-p-junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US755456XA | 1953-05-22 | 1953-05-22 |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1098372A true FR1098372A (fr) | 1955-07-25 |
Family
ID=22126455
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1098372D Expired FR1098372A (fr) | 1953-05-22 | 1954-04-08 | Dispositifs semi-conducteurs |
Country Status (2)
Country | Link |
---|---|
FR (1) | FR1098372A (fr) |
GB (1) | GB755456A (fr) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2857527A (en) * | 1955-04-28 | 1958-10-21 | Rca Corp | Semiconductor devices including biased p+p or n+n rectifying barriers |
US2914715A (en) * | 1956-07-02 | 1959-11-24 | Bell Telephone Labor Inc | Semiconductor diode |
DE1073632B (de) * | 1956-06-18 | 1960-01-21 | Radio Corporation Of America, New York, N. Y. (V. St. A.) | Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung |
US3028655A (en) * | 1955-03-23 | 1962-04-10 | Bell Telephone Labor Inc | Semiconductive device |
DE1166941B (de) * | 1957-02-07 | 1964-04-02 | Telefunken Patent | Halbleiterbauelement mit pn-UEbergang |
-
1954
- 1954-04-08 FR FR1098372D patent/FR1098372A/fr not_active Expired
- 1954-04-23 GB GB11837/54A patent/GB755456A/en not_active Expired
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3028655A (en) * | 1955-03-23 | 1962-04-10 | Bell Telephone Labor Inc | Semiconductive device |
US2857527A (en) * | 1955-04-28 | 1958-10-21 | Rca Corp | Semiconductor devices including biased p+p or n+n rectifying barriers |
DE1073632B (de) * | 1956-06-18 | 1960-01-21 | Radio Corporation Of America, New York, N. Y. (V. St. A.) | Drift-Transistor mit einer Zonenfolge P-N-P bzw. N-P-N und Verfahren zu seiner Herstellung |
US2914715A (en) * | 1956-07-02 | 1959-11-24 | Bell Telephone Labor Inc | Semiconductor diode |
DE1166941B (de) * | 1957-02-07 | 1964-04-02 | Telefunken Patent | Halbleiterbauelement mit pn-UEbergang |
Also Published As
Publication number | Publication date |
---|---|
GB755456A (en) | 1956-08-22 |
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