FR1188659A - Dispositifs semi-conducteurs - Google Patents
Dispositifs semi-conducteursInfo
- Publication number
- FR1188659A FR1188659A FR1188659DA FR1188659A FR 1188659 A FR1188659 A FR 1188659A FR 1188659D A FR1188659D A FR 1188659DA FR 1188659 A FR1188659 A FR 1188659A
- Authority
- FR
- France
- Prior art keywords
- semiconductor devices
- semiconductor
- devices
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31683—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of metallic layers, e.g. Al deposited on the body, e.g. formation of multi-layer insulating structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3135—Double encapsulation or coating and encapsulation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3157—Partial encapsulation or coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US626623A US2875384A (en) | 1956-12-06 | 1956-12-06 | Semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1188659A true FR1188659A (fr) | 1959-09-24 |
Family
ID=24511156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR1188659D Expired FR1188659A (fr) | 1956-12-06 | 1957-12-03 | Dispositifs semi-conducteurs |
Country Status (5)
Country | Link |
---|---|
US (1) | US2875384A (fr) |
BE (1) | BE562973A (fr) |
DE (1) | DE1037016B (fr) |
FR (1) | FR1188659A (fr) |
GB (1) | GB882076A (fr) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1078238B (de) * | 1958-09-26 | 1960-03-24 | Siemens Ag | Gleichrichteranordnung mit pn-UEbergang und Verfahren zu ihrer Herstellung |
FR1222719A (fr) * | 1959-01-21 | 1960-06-13 | Labo Cent Telecommunicat | Procédés de fabrication de dispositifs semi-conducteurs |
US2981877A (en) * | 1959-07-30 | 1961-04-25 | Fairchild Semiconductor | Semiconductor device-and-lead structure |
DE1184178B (de) * | 1960-02-20 | 1964-12-23 | Standard Elektrik Lorenz Ag | Verfahren zum Stabilisieren der Oberflaeche von Halbleiterkoerpern mit pn-UEbergaengen durch Vakuumbedampfen |
DE1163980B (de) * | 1960-06-24 | 1964-02-27 | Siemens Ag | Verfahren zum schnellen Beseitigen von Wasserspuren von der Bildung einer Oxydhaut auf der Oberflaeche von oxydierbaren Halbleiterkoerpern mit oder ohne Elektroden fuer Halbleiterbauelemente |
DE1151072B (de) * | 1960-07-08 | 1963-07-04 | Licentia Gmbh | Verfahren zum Stabilisieren der Kennlinie von in Halbleiterkoerper aus Silizium oder Germanium einlegierten p-n-UEbergaengen |
DE1206088B (de) * | 1961-02-10 | 1965-12-02 | Siemens Ag | Halbleiteranordnung mit einem im wesentlichen einkristallinen Grundkoerper, insbesondere aus Silizium |
DE1141386B (de) * | 1961-04-26 | 1962-12-20 | Siemens Ag | Verfahren zur Herstellung einer Halbleiteranordnung |
DE1292254B (de) * | 1961-05-12 | 1969-04-10 | Itt Ind Gmbh Deutsche | Verfahren zum gleichzeitigen Herstellen gleichartiger Halbleiterbauelemente |
NL282407A (fr) * | 1961-08-30 | |||
DE1189654B (de) * | 1961-09-14 | 1965-03-25 | Licentia Gmbh | Verfahren zum Herstellen eines schuetzenden Oxydfilms auf dem Halbleiterkoerper einesHalbleiterbauelements |
NL285088A (fr) * | 1961-11-18 | |||
US3312577A (en) * | 1964-11-24 | 1967-04-04 | Int Standard Electric Corp | Process for passivating planar semiconductor devices |
US3409979A (en) * | 1965-02-02 | 1968-11-12 | Int Standard Electric Corp | Method for the surface treatment of semiconductor devices |
US3474301A (en) * | 1965-04-30 | 1969-10-21 | Hitachi Ltd | Semiconductor devices having insulating protective films and sealed with resinous materials |
US3438874A (en) * | 1966-05-11 | 1969-04-15 | Bell Telephone Labor Inc | Fabrication of solid thin film capacitor |
JPS4913909B1 (fr) * | 1970-05-04 | 1974-04-03 | ||
US3914465A (en) * | 1972-09-25 | 1975-10-21 | Bell Telephone Labor Inc | Surface passivation of GaAs junction laser devices |
DE2413608C2 (de) * | 1974-03-21 | 1982-09-02 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verfahren zum Herstellen eines Halbleiterbauelements |
US4608097A (en) * | 1984-10-05 | 1986-08-26 | Exxon Research And Engineering Co. | Method for producing an electronically passivated surface on crystalline silicon using a fluorination treatment and an organic overlayer |
DE3517665A1 (de) * | 1985-05-15 | 1986-11-20 | Wacker-Chemitronic Gesellschaft für Elektronik-Grundstoffe mbH, 8263 Burghausen | Verfahren zum polieren von siliciumscheiben |
JP2011205058A (ja) * | 2009-12-17 | 2011-10-13 | Rohm & Haas Electronic Materials Llc | 半導体基体をテクスチャ化する改良された方法 |
Family Cites Families (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US1748012A (en) * | 1928-09-12 | 1930-02-18 | William D Dooley | Rectifying device and method of producing the same |
US2711496A (en) * | 1952-09-27 | 1955-06-21 | Ruben Samuel | Lead peroxide rectifiers and method of making the same |
-
0
- BE BE562973D patent/BE562973A/xx unknown
-
1956
- 1956-12-06 US US626623A patent/US2875384A/en not_active Expired - Lifetime
-
1957
- 1957-11-15 GB GB35729/57A patent/GB882076A/en not_active Expired
- 1957-11-23 DE DER22226A patent/DE1037016B/de active Pending
- 1957-12-03 FR FR1188659D patent/FR1188659A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
BE562973A (fr) | 1900-01-01 |
DE1037016B (de) | 1958-08-21 |
GB882076A (en) | 1961-11-08 |
US2875384A (en) | 1959-02-24 |
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