FR1173400A - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR1173400A
FR1173400A FR1173400DA FR1173400A FR 1173400 A FR1173400 A FR 1173400A FR 1173400D A FR1173400D A FR 1173400DA FR 1173400 A FR1173400 A FR 1173400A
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Space Systems Loral LLC
Original Assignee
Philco Ford Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philco Ford Corp filed Critical Philco Ford Corp
Application granted granted Critical
Publication of FR1173400A publication Critical patent/FR1173400A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
FR1173400D 1956-05-18 1957-03-28 Dispositif semi-conducteur Expired FR1173400A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US585670A US2870052A (en) 1956-05-18 1956-05-18 Semiconductive device and method for the fabrication thereof

Publications (1)

Publication Number Publication Date
FR1173400A true FR1173400A (fr) 1959-02-24

Family

ID=24342444

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1173400D Expired FR1173400A (fr) 1956-05-18 1957-03-28 Dispositif semi-conducteur

Country Status (5)

Country Link
US (1) US2870052A (fr)
DE (1) DE1130522B (fr)
FR (1) FR1173400A (fr)
GB (1) GB826063A (fr)
NL (1) NL216979A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1292253B (de) * 1959-09-26 1969-04-10 Telefunken Patent Halbleiteranordnung

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE571348A (fr) * 1957-09-20 1900-01-01
US3033714A (en) * 1957-09-28 1962-05-08 Sony Corp Diode type semiconductor device
US2987658A (en) * 1958-01-10 1961-06-06 Philco Corp Improved semiconductor diode
US3076731A (en) * 1958-08-04 1963-02-05 Hughes Aircraft Co Semiconductor devices and method of making the same
US2953488A (en) * 1958-12-26 1960-09-20 Shockley William P-n junction having minimum transition layer capacitance
NL247746A (fr) * 1959-01-27
US3099588A (en) * 1959-03-11 1963-07-30 Westinghouse Electric Corp Formation of semiconductor transition regions by alloy vaporization and deposition
US3156592A (en) * 1959-04-20 1964-11-10 Sprague Electric Co Microalloying method for semiconductive device
US3079287A (en) * 1959-09-01 1963-02-26 Texas Instruments Inc Improved grown junction transistor and method of making same
US3109758A (en) * 1959-10-26 1963-11-05 Bell Telephone Labor Inc Improved tunnel diode
NL259446A (fr) * 1959-12-30 1900-01-01
DE1154876B (de) * 1960-08-04 1963-09-26 Telefunken Patent Transistor, insbesondere Schalttransistor, und Verfahren zu seinem Herstellen
US3225272A (en) * 1961-01-23 1965-12-21 Bendix Corp Semiconductor triode
NL260810A (fr) * 1961-02-03
GB1074287A (en) * 1963-12-13 1967-07-05 Mullard Ltd Improvements in and relating to semiconductor devices

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE536149A (fr) *
DE894293C (de) * 1951-06-29 1953-10-22 Western Electric Co Verfahren zur Herstellung eines Kristalls aus Halbleitermaterial
US2842723A (en) * 1952-04-15 1958-07-08 Licentia Gmbh Controllable asymmetric electrical conductor systems
US2750542A (en) * 1953-04-02 1956-06-12 Rca Corp Unipolar semiconductor devices
BE539908A (fr) * 1954-07-19

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1292253B (de) * 1959-09-26 1969-04-10 Telefunken Patent Halbleiteranordnung

Also Published As

Publication number Publication date
NL216979A (fr)
DE1130522B (de) 1962-05-30
GB826063A (en) 1959-12-23
US2870052A (en) 1959-01-20

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