FR1193364A - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR1193364A
FR1193364A FR1193364DA FR1193364A FR 1193364 A FR1193364 A FR 1193364A FR 1193364D A FR1193364D A FR 1193364DA FR 1193364 A FR1193364 A FR 1193364A
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Inventor
William Shockley
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1193364A publication Critical patent/FR1193364A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/919—Compensation doping
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/914—Doping
    • Y10S438/922—Diffusion along grain boundaries

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Junction Field-Effect Transistors (AREA)
FR1193364D 1957-03-18 1958-03-17 Dispositif semi-conducteur Expired FR1193364A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US646625A US2979427A (en) 1957-03-18 1957-03-18 Semiconductor device and method of making the same

Publications (1)

Publication Number Publication Date
FR1193364A true FR1193364A (fr) 1959-11-02

Family

ID=24593798

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1193364D Expired FR1193364A (fr) 1957-03-18 1958-03-17 Dispositif semi-conducteur

Country Status (4)

Country Link
US (1) US2979427A (fr)
DE (1) DE1086347B (fr)
FR (1) FR1193364A (fr)
GB (1) GB842403A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1130932B (de) * 1959-05-29 1962-06-07 Shockley Transistor Corp Verfahren zur Herstellung kleinflaechiger pn-UEbergaenge in Halbleiter-koerpern von einem Leitfaehigkeitstyp von Halbleiteranordnungen, z. B. Dioden oder Transistoren
DE1284517B (de) * 1959-09-11 1968-12-05 Fairchild Camera Instr Co Integrierte Halbleiterschaltung
DE1489031B1 (de) * 1963-11-08 1972-01-05 Ibm Transistor mit einem scheibenfoermigen Halbleiterkoerper und Verfahren zu seiner Herstellung
DE1274243C2 (de) * 1962-06-27 1974-07-25 Verfahren zur herstellung einer tunneldiode

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL249774A (fr) * 1959-03-26
US3126505A (en) * 1959-11-18 1964-03-24 Field effect transistor having grain boundary therein
US3242394A (en) * 1960-05-02 1966-03-22 Texas Instruments Inc Voltage variable resistor
US3261984A (en) * 1961-03-10 1966-07-19 Philco Corp Tunnel-emission amplifying device and circuit therefor
NL277811A (fr) * 1961-04-27 1900-01-01
NL299194A (fr) * 1962-10-15
US3332810A (en) * 1963-09-28 1967-07-25 Matsushita Electronics Corp Silicon rectifier device
US3274462A (en) * 1963-11-13 1966-09-20 Jr Keats A Pullen Structural configuration for fieldeffect and junction transistors
US3413531A (en) * 1966-09-06 1968-11-26 Ion Physics Corp High frequency field effect transistor
JPS5134268B2 (fr) * 1972-07-13 1976-09-25
US4926228A (en) * 1981-03-30 1990-05-15 Secretary Of State For Defence (G.B.) Photoconductive detector arranged for bias field concentration at the output bias contact

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE935382C (de) * 1949-10-06 1955-11-17 Standard Elek Zitaets Ges Ag Spitzengleichrichter hoher Stabilitaet und Leistung
NL82014C (fr) * 1949-11-30
US2654059A (en) * 1951-05-26 1953-09-29 Bell Telephone Labor Inc Semiconductor signal translating device
US2795742A (en) * 1952-12-12 1957-06-11 Bell Telephone Labor Inc Semiconductive translating devices utilizing selected natural grain boundaries
US2779877A (en) * 1955-06-17 1957-01-29 Sprague Electric Co Multiple junction transistor unit

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1130932B (de) * 1959-05-29 1962-06-07 Shockley Transistor Corp Verfahren zur Herstellung kleinflaechiger pn-UEbergaenge in Halbleiter-koerpern von einem Leitfaehigkeitstyp von Halbleiteranordnungen, z. B. Dioden oder Transistoren
DE1284517B (de) * 1959-09-11 1968-12-05 Fairchild Camera Instr Co Integrierte Halbleiterschaltung
DE1274243C2 (de) * 1962-06-27 1974-07-25 Verfahren zur herstellung einer tunneldiode
DE1274243B (de) * 1962-06-27 1974-07-25 Verfahren zur herstellung einer tunneldiode
DE1489031B1 (de) * 1963-11-08 1972-01-05 Ibm Transistor mit einem scheibenfoermigen Halbleiterkoerper und Verfahren zu seiner Herstellung

Also Published As

Publication number Publication date
DE1086347B (de) 1960-08-04
GB842403A (en) 1960-07-27
US2979427A (en) 1961-04-11

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