FR1193365A - Dispositif amplificateur à semi-conducteur - Google Patents

Dispositif amplificateur à semi-conducteur

Info

Publication number
FR1193365A
FR1193365A FR1193365DA FR1193365A FR 1193365 A FR1193365 A FR 1193365A FR 1193365D A FR1193365D A FR 1193365DA FR 1193365 A FR1193365 A FR 1193365A
Authority
FR
France
Prior art keywords
amplifier device
semiconductor amplifier
semiconductor
amplifier
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Inventor
William Shockley
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Application granted granted Critical
Publication of FR1193365A publication Critical patent/FR1193365A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/18—Modifications for indicating state of switch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/10—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with diodes

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
FR1193365D 1957-03-18 1958-03-17 Dispositif amplificateur à semi-conducteur Expired FR1193365A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US646654A US2936425A (en) 1957-03-18 1957-03-18 Semiconductor amplifying device

Publications (1)

Publication Number Publication Date
FR1193365A true FR1193365A (fr) 1959-11-02

Family

ID=24593917

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1193365D Expired FR1193365A (fr) 1957-03-18 1958-03-17 Dispositif amplificateur à semi-conducteur

Country Status (5)

Country Link
US (1) US2936425A (fr)
BE (1) BE552928A (fr)
DE (1) DE1162488B (fr)
FR (1) FR1193365A (fr)
GB (1) GB879977A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208413B (de) * 1959-11-21 1966-01-05 Siemens Ag Verfahren zum Herstellen von flaechenhaften pn-UEbergaengen an Halbleiterbauelementen

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3140206A (en) * 1957-04-11 1964-07-07 Clevite Corp Method of making a transistor structure
US3022472A (en) * 1958-01-22 1962-02-20 Bell Telephone Labor Inc Variable equalizer employing semiconductive element
US3098160A (en) * 1958-02-24 1963-07-16 Clevite Corp Field controlled avalanche semiconductive device
NL122949C (fr) * 1958-06-25 1900-01-01
NL245195A (fr) * 1958-12-11
FR1228285A (fr) * 1959-03-11 1960-08-29 Structures à semi-conducteurs pour amplificateur paramétrique à micro-ondes
NL251532A (fr) * 1959-06-17
US3201596A (en) * 1959-12-17 1965-08-17 Westinghouse Electric Corp Sequential trip semiconductor device
NL260481A (fr) * 1960-02-08
US3242394A (en) * 1960-05-02 1966-03-22 Texas Instruments Inc Voltage variable resistor
NL269345A (fr) * 1960-09-19
NL282849A (fr) * 1961-09-11
US3217215A (en) * 1963-07-05 1965-11-09 Int Rectifier Corp Field effect transistor
US3236698A (en) * 1964-04-08 1966-02-22 Clevite Corp Semiconductive device and method of making the same
US3337780A (en) * 1964-05-21 1967-08-22 Bell & Howell Co Resistance oriented semiconductor strain gage with barrier isolated element
US3320568A (en) * 1964-08-10 1967-05-16 Raytheon Co Sensitized notched transducers
US3450960A (en) * 1965-09-29 1969-06-17 Ibm Insulated-gate field effect transistor with nonplanar gate electrode structure for optimizing transconductance
DE1283978B (de) * 1965-12-08 1968-11-28 Telefunken Patent Elektronisches Festkoerperbauelement mit durch Ladungstraegerinjektion steuerbarem elektrischem Widerstand
FR2508703A1 (fr) * 1981-06-30 1982-12-31 Commissariat Energie Atomique Diode zener compensee en temperature et stable sous irradiation et procede de fabrication d'une telle diode

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1900018A (en) * 1928-03-28 1933-03-07 Lilienfeld Julius Edgar Device for controlling electric current
US2666814A (en) * 1949-04-27 1954-01-19 Bell Telephone Labor Inc Semiconductor translating device
US2805347A (en) * 1954-05-27 1957-09-03 Bell Telephone Labor Inc Semiconductive devices
FR1124464A (fr) * 1955-02-15 1956-10-12 Transistron unipolaire
NL202404A (fr) * 1955-02-18

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1208413B (de) * 1959-11-21 1966-01-05 Siemens Ag Verfahren zum Herstellen von flaechenhaften pn-UEbergaengen an Halbleiterbauelementen

Also Published As

Publication number Publication date
BE552928A (fr)
GB879977A (en) 1961-10-11
US2936425A (en) 1960-05-10
DE1162488B (de) 1964-02-06

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