FR1172900A - Dispositif semi-conducteur - Google Patents

Dispositif semi-conducteur

Info

Publication number
FR1172900A
FR1172900A FR1172900DA FR1172900A FR 1172900 A FR1172900 A FR 1172900A FR 1172900D A FR1172900D A FR 1172900DA FR 1172900 A FR1172900 A FR 1172900A
Authority
FR
France
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sarkes Tarzian Inc
Original Assignee
Sarkes Tarzian Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sarkes Tarzian Inc filed Critical Sarkes Tarzian Inc
Application granted granted Critical
Publication of FR1172900A publication Critical patent/FR1172900A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/06—Containers; Seals characterised by the material of the container or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
    • H01L23/051—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body another lead being formed by a cover plate parallel to the base plate, e.g. sandwich type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/10—Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013—Alloys
    • H01L2924/0132—Binary Alloys
    • H01L2924/01322—Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode
FR1172900D 1956-03-09 1957-03-08 Dispositif semi-conducteur Expired FR1172900A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US570577A US2930948A (en) 1956-03-09 1956-03-09 Semiconductor device

Publications (1)

Publication Number Publication Date
FR1172900A true FR1172900A (fr) 1959-02-17

Family

ID=24280197

Family Applications (1)

Application Number Title Priority Date Filing Date
FR1172900D Expired FR1172900A (fr) 1956-03-09 1957-03-08 Dispositif semi-conducteur

Country Status (3)

Country Link
US (1) US2930948A (fr)
FR (1) FR1172900A (fr)
GB (2) GB855382A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1160545B (de) * 1959-08-27 1964-01-02 Philips Nv Halbleiterelektrodensystem mit einem Halbleiterkoerper und mit wenigstens einer Aluminium enthaltenden Elektrode auf diesem Koerper
DE1289194B (de) * 1964-11-13 1969-02-13 Itt Ind Gmbh Deutsche Halbleiterdiode mit Druckkontakt

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3032695A (en) * 1957-03-20 1962-05-01 Bosch Gmbh Robert Alloyed junction semiconductive device
US3151378A (en) * 1960-11-01 1964-10-06 Int Rectifier Corp Process for the manufacture of pure tin alloyed contact for diffused silicon devices
BE623873A (fr) * 1961-10-24 1900-01-01
BE627303A (fr) * 1962-01-19 1900-01-01
FR2150214A1 (fr) * 1971-08-20 1973-04-06 Thomson Csf

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2197115A (en) * 1937-01-27 1940-04-16 Gen Motors Corp Electric thermogauge engine unit
US2776920A (en) * 1952-11-05 1957-01-08 Gen Electric Germanium-zinc alloy semi-conductors
US2725505A (en) * 1953-11-30 1955-11-29 Rca Corp Semiconductor power devices
US2751528A (en) * 1954-12-01 1956-06-19 Gen Electric Rectifier cell mounting
US2784300A (en) * 1954-12-29 1957-03-05 Bell Telephone Labor Inc Method of fabricating an electrical connection
FR1094755A (fr) * 1955-01-20 1955-05-24
US2822512A (en) * 1955-05-17 1958-02-04 Westinghouse Brake & Signal Rectifier assemblies

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1160545B (de) * 1959-08-27 1964-01-02 Philips Nv Halbleiterelektrodensystem mit einem Halbleiterkoerper und mit wenigstens einer Aluminium enthaltenden Elektrode auf diesem Koerper
DE1289194B (de) * 1964-11-13 1969-02-13 Itt Ind Gmbh Deutsche Halbleiterdiode mit Druckkontakt

Also Published As

Publication number Publication date
GB855382A (en) 1960-11-30
US2930948A (en) 1960-03-29
GB855381A (en) 1960-11-30

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