FR1222719A - Procédés de fabrication de dispositifs semi-conducteurs - Google Patents

Procédés de fabrication de dispositifs semi-conducteurs

Info

Publication number
FR1222719A
FR1222719A FR784591A FR784591A FR1222719A FR 1222719 A FR1222719 A FR 1222719A FR 784591 A FR784591 A FR 784591A FR 784591 A FR784591 A FR 784591A FR 1222719 A FR1222719 A FR 1222719A
Authority
FR
France
Prior art keywords
semiconductor device
device manufacturing
manufacturing processes
processes
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR784591A
Other languages
English (en)
Inventor
Rolland-Roger-Desire Echard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Laboratoire Central de Telecommunications SA
Original Assignee
Laboratoire Central de Telecommunications SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Laboratoire Central de Telecommunications SA filed Critical Laboratoire Central de Telecommunications SA
Priority to FR784591A priority Critical patent/FR1222719A/fr
Priority to GB1495/60A priority patent/GB909804A/en
Priority to BE586693A priority patent/BE586693A/fr
Priority to DE1960J0017558 priority patent/DE1163975C2/de
Priority to CH63860A priority patent/CH364846A/fr
Application granted granted Critical
Publication of FR1222719A publication Critical patent/FR1222719A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
    • H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
    • H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
    • H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
    • H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Die Bonding (AREA)
  • Electrodes Of Semiconductors (AREA)
FR784591A 1959-01-21 1959-01-21 Procédés de fabrication de dispositifs semi-conducteurs Expired FR1222719A (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR784591A FR1222719A (fr) 1959-01-21 1959-01-21 Procédés de fabrication de dispositifs semi-conducteurs
GB1495/60A GB909804A (en) 1959-01-21 1960-01-15 Methods of manufacturing semi-conductor devices
BE586693A BE586693A (fr) 1959-01-21 1960-01-19 Procédés de fabrication de dispositifs semi-conducteurs.
DE1960J0017558 DE1163975C2 (de) 1959-01-21 1960-01-20 Verfahren zur Verbesserung der elektrischen Eigenschaften von Halbleiteranordnungen
CH63860A CH364846A (fr) 1959-01-21 1960-01-21 Procédé de traitement de la surface de la pastille active d'un dispositif semi-conducteur

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR784591A FR1222719A (fr) 1959-01-21 1959-01-21 Procédés de fabrication de dispositifs semi-conducteurs

Publications (1)

Publication Number Publication Date
FR1222719A true FR1222719A (fr) 1960-06-13

Family

ID=8710365

Family Applications (1)

Application Number Title Priority Date Filing Date
FR784591A Expired FR1222719A (fr) 1959-01-21 1959-01-21 Procédés de fabrication de dispositifs semi-conducteurs

Country Status (5)

Country Link
BE (1) BE586693A (fr)
CH (1) CH364846A (fr)
DE (1) DE1163975C2 (fr)
FR (1) FR1222719A (fr)
GB (1) GB909804A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1292257B (de) * 1960-08-30 1969-04-10 Siemens Ag Verfahren zum Einlegieren einer Elektrode unter Bildung eines pn-UEbergangs in einem halbleitenden Germaniumkristall fuer ein Halbleiterbauelement

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE534505A (fr) * 1953-12-30
BE562973A (fr) * 1956-12-06 1900-01-01
NL230243A (fr) * 1957-08-07

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1292257B (de) * 1960-08-30 1969-04-10 Siemens Ag Verfahren zum Einlegieren einer Elektrode unter Bildung eines pn-UEbergangs in einem halbleitenden Germaniumkristall fuer ein Halbleiterbauelement

Also Published As

Publication number Publication date
CH364846A (fr) 1962-10-15
DE1163975C2 (de) 1964-08-27
GB909804A (en) 1962-11-07
BE586693A (fr) 1960-07-19
DE1163975B (de) 1964-02-27

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