FR1298148A - Fabrication de dispositifs semi-conducteurs - Google Patents

Fabrication de dispositifs semi-conducteurs

Info

Publication number
FR1298148A
FR1298148A FR871230A FR871230A FR1298148A FR 1298148 A FR1298148 A FR 1298148A FR 871230 A FR871230 A FR 871230A FR 871230 A FR871230 A FR 871230A FR 1298148 A FR1298148 A FR 1298148A
Authority
FR
France
Prior art keywords
semiconductor device
device manufacturing
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR871230A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Application granted granted Critical
Publication of FR1298148A publication Critical patent/FR1298148A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
    • H01L23/485—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body consisting of layered constructions comprising conductive layers and insulating layers, e.g. planar contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/934—Electrical process
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S428/00—Stock material or miscellaneous articles
    • Y10S428/922—Static electricity metal bleed-off metallic stock
    • Y10S428/9335—Product by special process
    • Y10S428/938—Vapor deposition or gas diffusion
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12444—Embodying fibers interengaged or between layers [e.g., paper, etc.]
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/12—All metal or with adjacent metals
    • Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
    • Y10T428/12535—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.] with additional, spatially distinct nonmetal component
    • Y10T428/12583—Component contains compound of adjacent metal
    • Y10T428/1259—Oxide

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Photovoltaic Devices (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
FR871230A 1960-12-09 1961-08-21 Fabrication de dispositifs semi-conducteurs Expired FR1298148A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74872A US3106489A (en) 1960-12-09 1960-12-09 Semiconductor device fabrication

Publications (1)

Publication Number Publication Date
FR1298148A true FR1298148A (fr) 1962-07-06

Family

ID=22122171

Family Applications (1)

Application Number Title Priority Date Filing Date
FR871230A Expired FR1298148A (fr) 1960-12-09 1961-08-21 Fabrication de dispositifs semi-conducteurs

Country Status (8)

Country Link
US (1) US3106489A (fr)
JP (1) JPS387274B1 (fr)
BE (1) BE606680A (fr)
CH (1) CH422161A (fr)
DE (1) DE1200439B (fr)
FR (1) FR1298148A (fr)
GB (1) GB991174A (fr)
NL (2) NL128768C (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1282196B (de) * 1963-12-17 1968-11-07 Western Electric Co Halbleiterbauelement mit einer Schutzvorrichtung fuer seine pn-UEbergaenge

Families Citing this family (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3261984A (en) * 1961-03-10 1966-07-19 Philco Corp Tunnel-emission amplifying device and circuit therefor
US3376163A (en) * 1961-08-11 1968-04-02 Itek Corp Photosensitive cell
US3518066A (en) * 1962-12-26 1970-06-30 Philips Corp Metallizing non-metals
US3310685A (en) * 1963-05-03 1967-03-21 Gtc Kk Narrow band emitter devices
US3442701A (en) * 1965-05-19 1969-05-06 Bell Telephone Labor Inc Method of fabricating semiconductor contacts
FR1450654A (fr) * 1965-07-01 1966-06-24 Radiotechnique Perfectionnements aux dispositifs semi-conducteurs de détection de radiations ionisantes
US3390969A (en) * 1966-04-27 1968-07-02 Infrared Ind Inc Noble metal coated ceramic substrate for glass seals and electronic connector elements
US3629776A (en) * 1967-10-24 1971-12-21 Nippon Kogaku Kk Sliding thin film resistance for measuring instruments
US3465211A (en) * 1968-02-01 1969-09-02 Friden Inc Multilayer contact system for semiconductors
US3471756A (en) * 1968-03-11 1969-10-07 Us Army Metal oxide-silicon diode containing coating of vanadium pentoxide-v2o5 deposited on n-type material with nickel electrodes
FR2014594B1 (fr) * 1968-07-15 1974-02-22 Ibm
US3567508A (en) * 1968-10-31 1971-03-02 Gen Electric Low temperature-high vacuum contact formation process
US4016589A (en) * 1971-11-10 1977-04-05 Omron Tateisi Electronics Co., Ltd. Semiconductor device
US4011577A (en) * 1972-03-21 1977-03-08 Omron Tateisi Electronics Co. Mechanical-electrical force transducer with semiconductor-insulating layer-tin oxide composite
GB1419143A (en) * 1972-04-04 1975-12-24 Omron Tateisi Electronics Co Semiconductor photoelectric device
NL163370C (nl) * 1972-04-28 1980-08-15 Philips Nv Werkwijze voor het vervaardigen van een halfgeleider- inrichting met een geleiderpatroon.
US3983284A (en) * 1972-06-02 1976-09-28 Thomson-Csf Flat connection for a semiconductor multilayer structure
JPS5120277B2 (fr) * 1972-08-17 1976-06-23
US3977905A (en) * 1973-02-13 1976-08-31 Communications Satellite Corporation (Comsat) Solar cell with niobium pentoxide anti-reflective coating
CA1017840A (en) * 1973-02-13 1977-09-20 Communications Satellite Corporation Niobium pentoxide anti-reflective coating
US4082568A (en) * 1977-05-10 1978-04-04 Joseph Lindmayer Solar cell with multiple-metal contacts
US4153518A (en) * 1977-11-18 1979-05-08 Tektronix, Inc. Method of making a metalized substrate having a thin film barrier layer
US4307132A (en) * 1977-12-27 1981-12-22 International Business Machines Corp. Method for fabricating a contact on a semiconductor substrate by depositing an aluminum oxide diffusion barrier layer
US4392010A (en) * 1979-01-16 1983-07-05 Solarex Corporation Photovoltaic cells having contacts and method of applying same
US4235644A (en) * 1979-08-31 1980-11-25 E. I. Du Pont De Nemours And Company Thick film silver metallizations for silicon solar cells
US4471405A (en) * 1981-12-28 1984-09-11 International Business Machines Corporation Thin film capacitor with a dual bottom electrode structure
US4871617A (en) * 1984-04-02 1989-10-03 General Electric Company Ohmic contacts and interconnects to silicon and method of making same
US4702967A (en) * 1986-06-16 1987-10-27 Harris Corporation Multiple-layer, multiple-phase titanium/nitrogen adhesion/diffusion barrier layer structure for gold-base microcircuit interconnection
US5532031A (en) * 1992-01-29 1996-07-02 International Business Machines Corporation I/O pad adhesion layer for a ceramic substrate
US5783483A (en) * 1993-02-24 1998-07-21 Intel Corporation Method of fabricating a barrier against metal diffusion
US6690044B1 (en) * 1993-03-19 2004-02-10 Micron Technology, Inc. Approach to avoid buckling BPSG by using an intermediate barrier layer
WO1995002900A1 (fr) * 1993-07-15 1995-01-26 Astarix, Inc. Alliage d'aluminium-palladium destine a l'amorçage de plaquages non electrolytiques
US6051879A (en) 1997-12-16 2000-04-18 Micron Technology, Inc. Electrical interconnection for attachment to a substrate
US7637801B2 (en) * 2000-09-28 2009-12-29 Sharp Kabushiki Kaisha Method of making solar cell
US6563185B2 (en) * 2001-05-21 2003-05-13 The Regents Of The University Of Colorado High speed electron tunneling device and applications
JP2006310348A (ja) * 2005-04-26 2006-11-09 Sanyo Electric Co Ltd 積層型光起電力装置
JP2008021750A (ja) * 2006-07-11 2008-01-31 Matsushita Electric Ind Co Ltd 抵抗変化素子およびその製造方法、ならびにそれを用いた抵抗変化型メモリ
JP5191527B2 (ja) * 2010-11-19 2013-05-08 日本発條株式会社 積層体および積層体の製造方法
US9166004B2 (en) 2010-12-23 2015-10-20 Intel Corporation Semiconductor device contacts
CN113223953B (zh) * 2021-03-31 2022-09-27 青岛惠科微电子有限公司 一种快恢复芯片的制造方法、制造设备和快恢复芯片
CN113223944B (zh) * 2021-03-31 2022-09-27 青岛惠科微电子有限公司 一种快恢复芯片的制造方法、制造设备和快恢复芯片
CN113178385B (zh) * 2021-03-31 2022-12-23 青岛惠科微电子有限公司 一种芯片的制造方法、制造设备和芯片

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2695852A (en) * 1952-02-15 1954-11-30 Bell Telephone Labor Inc Fabrication of semiconductors for signal translating devices
US2799600A (en) * 1954-08-17 1957-07-16 Noel W Scott Method of producing electrically conducting transparent coatings on optical surfaces
NL190331A (fr) * 1954-08-26 1900-01-01
DE1067131B (de) * 1954-09-15 1959-10-15 Siemens &. Halske Aktiengesell schatt Berlin und München Verfahren zum Herstellen einer Halbleiteranordnung mit einer zwischen einer Metallschicht und der Oberflache des Halbleiterkristalls erzeugten Randschicht
US2922092A (en) * 1957-05-09 1960-01-19 Westinghouse Electric Corp Base contact members for semiconductor devices
GB829170A (en) * 1957-06-03 1960-02-24 Sperry Rand Corp Method of bonding an element of semiconducting material to an electrode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1282196B (de) * 1963-12-17 1968-11-07 Western Electric Co Halbleiterbauelement mit einer Schutzvorrichtung fuer seine pn-UEbergaenge

Also Published As

Publication number Publication date
GB991174A (en) 1965-05-05
DE1200439B (de) 1965-09-09
US3106489A (en) 1963-10-08
NL128768C (fr)
BE606680A (fr) 1961-11-16
NL268503A (fr)
CH422161A (de) 1966-10-15
JPS387274B1 (fr) 1963-05-28

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