CH394400A - Halbleitervorrichtung - Google Patents

Halbleitervorrichtung

Info

Publication number
CH394400A
CH394400A CH1006461A CH1006461A CH394400A CH 394400 A CH394400 A CH 394400A CH 1006461 A CH1006461 A CH 1006461A CH 1006461 A CH1006461 A CH 1006461A CH 394400 A CH394400 A CH 394400A
Authority
CH
Switzerland
Prior art keywords
semiconductor device
semiconductor
Prior art date
Application number
CH1006461A
Other languages
English (en)
Original Assignee
Raytheon Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Raytheon Co filed Critical Raytheon Co
Publication of CH394400A publication Critical patent/CH394400A/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
    • H01L29/1608—Silicon carbide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/148—Silicon carbide

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Products (AREA)
CH1006461A 1960-12-22 1961-08-29 Halbleitervorrichtung CH394400A (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US77735A US3176204A (en) 1960-12-22 1960-12-22 Device composed of different semiconductive materials

Publications (1)

Publication Number Publication Date
CH394400A true CH394400A (de) 1965-06-30

Family

ID=22139755

Family Applications (1)

Application Number Title Priority Date Filing Date
CH1006461A CH394400A (de) 1960-12-22 1961-08-29 Halbleitervorrichtung

Country Status (2)

Country Link
US (1) US3176204A (de)
CH (1) CH394400A (de)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3246560C1 (de) * 1982-12-16 1984-03-15 L. & C. Steinmüller GmbH, 5270 Gummersbach Gusseisen-Druckbehaelter
US4767666A (en) * 1985-05-23 1988-08-30 The Regents Of The University Of California Wafer base for silicon carbide semiconductor device
US4947218A (en) * 1987-11-03 1990-08-07 North Carolina State University P-N junction diodes in silicon carbide
US20080018261A1 (en) * 2006-05-01 2008-01-24 Kastner Mark A LED power supply with options for dimming

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2629672A (en) * 1949-07-07 1953-02-24 Bell Telephone Labor Inc Method of making semiconductive translating devices
NL198572A (de) * 1954-07-27
NL111788C (de) * 1956-06-18
US2929859A (en) * 1957-03-12 1960-03-22 Rca Corp Semiconductor devices
DE1073110B (de) * 1957-08-16 1960-01-14 General Electric Company, Schenectady, N Y (V St A) Verfahren zur Herstellung gleichrichtender oder ohmscher Anschlußkontakte an Siliziumkarbidkorpern

Also Published As

Publication number Publication date
US3176204A (en) 1965-03-30

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