CH394400A - Halbleitervorrichtung - Google Patents
HalbleitervorrichtungInfo
- Publication number
- CH394400A CH394400A CH1006461A CH1006461A CH394400A CH 394400 A CH394400 A CH 394400A CH 1006461 A CH1006461 A CH 1006461A CH 1006461 A CH1006461 A CH 1006461A CH 394400 A CH394400 A CH 394400A
- Authority
- CH
- Switzerland
- Prior art keywords
- semiconductor device
- semiconductor
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1608—Silicon carbide
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/185—Joining of semiconductor bodies for junction formation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/148—Silicon carbide
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Products (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US77735A US3176204A (en) | 1960-12-22 | 1960-12-22 | Device composed of different semiconductive materials |
Publications (1)
Publication Number | Publication Date |
---|---|
CH394400A true CH394400A (de) | 1965-06-30 |
Family
ID=22139755
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1006461A CH394400A (de) | 1960-12-22 | 1961-08-29 | Halbleitervorrichtung |
Country Status (2)
Country | Link |
---|---|
US (1) | US3176204A (de) |
CH (1) | CH394400A (de) |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3246560C1 (de) * | 1982-12-16 | 1984-03-15 | L. & C. Steinmüller GmbH, 5270 Gummersbach | Gusseisen-Druckbehaelter |
US4767666A (en) * | 1985-05-23 | 1988-08-30 | The Regents Of The University Of California | Wafer base for silicon carbide semiconductor device |
US4947218A (en) * | 1987-11-03 | 1990-08-07 | North Carolina State University | P-N junction diodes in silicon carbide |
US20080018261A1 (en) * | 2006-05-01 | 2008-01-24 | Kastner Mark A | LED power supply with options for dimming |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2629672A (en) * | 1949-07-07 | 1953-02-24 | Bell Telephone Labor Inc | Method of making semiconductive translating devices |
US2831787A (en) * | 1954-07-27 | 1958-04-22 | Emeis | |
NL111788C (de) * | 1956-06-18 | |||
US2929859A (en) * | 1957-03-12 | 1960-03-22 | Rca Corp | Semiconductor devices |
DE1073110B (de) * | 1957-08-16 | 1960-01-14 | General Electric Company, Schenectady, N Y (V St A) | Verfahren zur Herstellung gleichrichtender oder ohmscher Anschlußkontakte an Siliziumkarbidkorpern |
-
1960
- 1960-12-22 US US77735A patent/US3176204A/en not_active Expired - Lifetime
-
1961
- 1961-08-29 CH CH1006461A patent/CH394400A/de unknown
Also Published As
Publication number | Publication date |
---|---|
US3176204A (en) | 1965-03-30 |
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