FR1287279A - Procédé de fabrication de dispositifs semi-conducteurs - Google Patents
Procédé de fabrication de dispositifs semi-conducteursInfo
- Publication number
- FR1287279A FR1287279A FR860134A FR860134A FR1287279A FR 1287279 A FR1287279 A FR 1287279A FR 860134 A FR860134 A FR 860134A FR 860134 A FR860134 A FR 860134A FR 1287279 A FR1287279 A FR 1287279A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- manufacturing process
- device manufacturing
- semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/167—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table further characterised by the doping material
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S252/00—Compositions
- Y10S252/95—Doping agent source material
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US62495A US3084079A (en) | 1960-10-13 | 1960-10-13 | Manufacture of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1287279A true FR1287279A (fr) | 1962-03-09 |
Family
ID=22042857
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR860134A Expired FR1287279A (fr) | 1960-10-13 | 1961-04-27 | Procédé de fabrication de dispositifs semi-conducteurs |
Country Status (5)
Country | Link |
---|---|
US (1) | US3084079A (fr) |
DE (1) | DE1213054B (fr) |
FR (1) | FR1287279A (fr) |
GB (1) | GB930487A (fr) |
NL (1) | NL263492A (fr) |
Families Citing this family (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3200019A (en) * | 1962-01-19 | 1965-08-10 | Rca Corp | Method for making a semiconductor device |
US3247032A (en) * | 1962-06-20 | 1966-04-19 | Continental Device Corp | Method for controlling diffusion of an active impurity material into a semiconductor body |
US3281291A (en) * | 1963-08-30 | 1966-10-25 | Rca Corp | Semiconductor device fabrication |
GB1102164A (en) * | 1964-04-15 | 1968-02-07 | Texas Instruments Inc | Selective impurity diffusion |
US3354005A (en) * | 1965-10-23 | 1967-11-21 | Western Electric Co | Methods of applying doping compositions to base materials |
US3532563A (en) * | 1968-03-19 | 1970-10-06 | Milton Genser | Doping of semiconductor surfaces |
US4050966A (en) * | 1968-12-20 | 1977-09-27 | Siemens Aktiengesellschaft | Method for the preparation of diffused silicon semiconductor components |
US3630793A (en) * | 1969-02-24 | 1971-12-28 | Ralph W Christensen | Method of making junction-type semiconductor devices |
DE2007752B2 (de) * | 1970-02-19 | 1978-07-27 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen von dotiertem Halbleitermaterial |
US3928225A (en) * | 1971-04-08 | 1975-12-23 | Semikron Gleichrichterbau | Glass forming mixture with boron as the doping material for producing conductivity zones in semiconductor bodies by means of diffusion |
US4048350A (en) * | 1975-09-19 | 1977-09-13 | International Business Machines Corporation | Semiconductor device having reduced surface leakage and methods of manufacture |
US4236948A (en) * | 1979-03-09 | 1980-12-02 | Demetron Gesellschaft Fur Elektronik Werkstoffe Mbh | Process for doping semiconductor crystals |
GB2114365B (en) * | 1982-01-28 | 1986-08-06 | Owens Illinois Inc | Process for forming a doped oxide film and composite article |
US4571366A (en) * | 1982-02-11 | 1986-02-18 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
US4605450A (en) * | 1982-02-11 | 1986-08-12 | Owens-Illinois, Inc. | Process for forming a doped oxide film and doped semiconductor |
US4490192A (en) * | 1983-06-08 | 1984-12-25 | Allied Corporation | Stable suspensions of boron, phosphorus, antimony and arsenic dopants |
JPS60153119A (ja) * | 1984-01-20 | 1985-08-12 | Fuji Electric Corp Res & Dev Ltd | 不純物拡散方法 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB580412A (en) * | 1942-08-29 | 1946-09-06 | Micromatic Hone Corp | Improvements in tools for honing helical slots or grooves |
US2484519A (en) * | 1946-01-15 | 1949-10-11 | Martin Graham Robert | Method of coating surfaces with boron |
GB778383A (en) * | 1953-10-02 | 1957-07-03 | Standard Telephones Cables Ltd | Improvements in or relating to the production of material for semi-conductors |
BE548647A (fr) * | 1955-06-28 | |||
US2832702A (en) * | 1955-08-18 | 1958-04-29 | Hughes Aircraft Co | Method of treating semiconductor bodies for translating devices |
BE550586A (fr) * | 1955-12-02 | |||
US2828232A (en) * | 1956-05-01 | 1958-03-25 | Hughes Aircraft Co | Method for producing junctions in semi-conductor device |
NL135875C (fr) * | 1958-06-09 | 1900-01-01 | ||
US2974073A (en) * | 1958-12-04 | 1961-03-07 | Rca Corp | Method of making phosphorus diffused silicon semiconductor devices |
FR1248102A (fr) * | 1959-10-30 | 1960-12-09 | Materiel Telephonique | Préparation des semi-conducteurs |
-
1960
- 1960-10-13 US US62495A patent/US3084079A/en not_active Expired - Lifetime
-
1961
- 1961-04-06 GB GB12396/61A patent/GB930487A/en not_active Expired
- 1961-04-11 NL NL263492D patent/NL263492A/xx unknown
- 1961-04-27 FR FR860134A patent/FR1287279A/fr not_active Expired
- 1961-05-09 DE DEP27124A patent/DE1213054B/de active Pending
Also Published As
Publication number | Publication date |
---|---|
DE1213054B (de) | 1966-03-24 |
US3084079A (en) | 1963-04-02 |
GB930487A (en) | 1963-07-03 |
NL263492A (fr) | 1964-05-25 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
FR1298148A (fr) | Fabrication de dispositifs semi-conducteurs | |
FR1221347A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1230860A (fr) | Procédé pour la fabrication de dispositifs semi-conducteurs | |
FR1287279A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1170559A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
BE606338A (fr) | Fabrication de dispositifs semi-conducteurs | |
FR1307782A (fr) | Fabrication de dispositifs semi-conducteurs | |
FR1197039A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1378631A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1424254A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1464990A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
BE591663A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1398276A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1184331A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1289336A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1303635A (fr) | Procédé de fabrication de dispositifs à semi-conducteur | |
FR1289394A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1286474A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1369631A (fr) | Procédé de fabrication de dispositifs à semi-conducteurs | |
FR1284534A (fr) | Fabrication de dispositifs semi-conducteurs | |
FR1319965A (fr) | Procédé de fabrication de dispositifs à semi-conducteurs | |
FR1380991A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1460406A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1288291A (fr) | Procédé de fabrication de dispositifs semi-conducteurs | |
FR1427605A (fr) | Procédé de fabrication de dispositifs semi-conducteurs |