FR1464990A - Procédé de fabrication de dispositifs semi-conducteurs - Google Patents
Procédé de fabrication de dispositifs semi-conducteursInfo
- Publication number
- FR1464990A FR1464990A FR43987A FR43987A FR1464990A FR 1464990 A FR1464990 A FR 1464990A FR 43987 A FR43987 A FR 43987A FR 43987 A FR43987 A FR 43987A FR 1464990 A FR1464990 A FR 1464990A
- Authority
- FR
- France
- Prior art keywords
- semiconductor device
- manufacturing process
- device manufacturing
- semiconductor
- manufacturing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/3165—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation
- H01L21/31654—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself
- H01L21/31658—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe
- H01L21/31662—Inorganic layers composed of oxides or glassy oxides or oxide based glass formed by oxidation of semiconductor materials, e.g. the body itself by thermal oxidation, e.g. of SiGe of silicon in uncombined form
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02255—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/053—Field effect transistors fets
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/118—Oxide films
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/91—Controlling charging state at semiconductor-insulator interface
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/914—Doping
- Y10S438/922—Diffusion along grain boundaries
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Formation Of Insulating Films (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US421532A US3336661A (en) | 1964-12-28 | 1964-12-28 | Semiconductive device fabrication |
Publications (1)
Publication Number | Publication Date |
---|---|
FR1464990A true FR1464990A (fr) | 1967-03-20 |
Family
ID=23670929
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR43987A Expired FR1464990A (fr) | 1964-12-28 | 1965-12-28 | Procédé de fabrication de dispositifs semi-conducteurs |
Country Status (7)
Country | Link |
---|---|
US (1) | US3336661A (fr) |
BE (1) | BE674294A (fr) |
DE (1) | DE1514378B1 (fr) |
FR (1) | FR1464990A (fr) |
GB (1) | GB1119570A (fr) |
NL (1) | NL6516962A (fr) |
SE (1) | SE326500B (fr) |
Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3472703A (en) * | 1963-06-06 | 1969-10-14 | Hitachi Ltd | Method for producing semiconductor devices |
GB1030670A (en) * | 1964-12-02 | 1966-05-25 | Standard Telephones Cables Ltd | Semiconductor devices |
US3463974A (en) * | 1966-07-01 | 1969-08-26 | Fairchild Camera Instr Co | Mos transistor and method of manufacture |
US3655545A (en) * | 1968-02-28 | 1972-04-11 | Ppg Industries Inc | Post heating of sputtered metal oxide films |
US3547717A (en) * | 1968-04-29 | 1970-12-15 | Sprague Electric Co | Radiation resistant semiconductive device |
US3620850A (en) * | 1970-03-25 | 1971-11-16 | Fairchild Camera Instr Co | Oxygen annealing |
US4139658A (en) * | 1976-06-23 | 1979-02-13 | Rca Corp. | Process for manufacturing a radiation hardened oxide |
US4214919A (en) * | 1978-12-28 | 1980-07-29 | Burroughs Corporation | Technique of growing thin silicon oxide films utilizing argon in the contact gas |
US4585492A (en) * | 1984-07-30 | 1986-04-29 | International Business Machines Corporation | Rapid thermal annealing of silicon dioxide for reduced hole trapping |
KR100732288B1 (ko) * | 2005-04-15 | 2007-06-25 | 주식회사 하이닉스반도체 | 반도체 소자의 제조 방법 |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US2879190A (en) * | 1957-03-22 | 1959-03-24 | Bell Telephone Labor Inc | Fabrication of silicon devices |
US2873222A (en) * | 1957-11-07 | 1959-02-10 | Bell Telephone Labor Inc | Vapor-solid diffusion of semiconductive material |
US2981646A (en) * | 1958-02-11 | 1961-04-25 | Sprague Electric Co | Process of forming barrier layers |
US3034211A (en) * | 1959-12-29 | 1962-05-15 | Pittsburgh Steel Co | Method of making clad steel |
US3147152A (en) * | 1960-01-28 | 1964-09-01 | Western Electric Co | Diffusion control in semiconductive bodies |
NL265382A (fr) * | 1960-03-08 | |||
BE636316A (fr) * | 1962-08-23 | 1900-01-01 |
-
0
- BE BE674294D patent/BE674294A/xx unknown
-
1964
- 1964-12-28 US US421532A patent/US3336661A/en not_active Expired - Lifetime
-
1965
- 1965-12-21 GB GB54239/65A patent/GB1119570A/en not_active Expired
- 1965-12-23 DE DE19651514378D patent/DE1514378B1/de active Pending
- 1965-12-27 SE SE16784/65A patent/SE326500B/xx unknown
- 1965-12-27 NL NL6516962A patent/NL6516962A/xx unknown
- 1965-12-28 FR FR43987A patent/FR1464990A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
NL6516962A (fr) | 1966-06-29 |
US3336661A (en) | 1967-08-22 |
SE326500B (fr) | 1970-07-27 |
DE1514378B1 (de) | 1970-06-18 |
BE674294A (fr) | |
GB1119570A (en) | 1968-07-10 |
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