NL265382A
(fr)
*
|
1960-03-08 |
|
|
|
DE1160106B
(de)
*
|
1960-11-11 |
1963-12-27 |
Intermetall |
Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen
|
NL274830A
(fr)
*
|
1961-04-12 |
|
|
|
NL282170A
(fr)
*
|
1961-08-17 |
|
|
|
NL293292A
(fr)
*
|
1962-06-11 |
|
|
|
BE636317A
(fr)
*
|
1962-08-23 |
1900-01-01 |
|
|
BE637064A
(fr)
*
|
1962-09-07 |
|
Rca Corp |
|
NL301883A
(fr)
*
|
1962-12-17 |
|
|
|
NL302841A
(fr)
*
|
1963-01-02 |
|
|
|
US3384829A
(en)
*
|
1963-02-08 |
1968-05-21 |
Nippon Electric Co |
Semiconductor variable capacitance element
|
CA759138A
(en)
*
|
1963-05-20 |
1967-05-16 |
F. Rogers Gordon |
Field effect transistor circuit
|
US3472703A
(en)
*
|
1963-06-06 |
1969-10-14 |
Hitachi Ltd |
Method for producing semiconductor devices
|
GB1071383A
(en)
*
|
1963-06-24 |
1967-06-07 |
Hitachi Ltd |
Field-effect semiconductor devices
|
DE1252276C2
(de)
*
|
1963-08-23 |
1974-05-30 |
|
Verstaerker fuer elektrische hochfrequenzschwingungen
|
NL297331A
(fr)
*
|
1963-08-30 |
|
|
|
US3360736A
(en)
*
|
1963-09-10 |
1967-12-26 |
Hitachi Ltd |
Two input field effect transistor amplifier
|
US3263095A
(en)
*
|
1963-12-26 |
1966-07-26 |
Ibm |
Heterojunction surface channel transistors
|
GB1100124A
(en)
*
|
1964-02-13 |
1968-01-24 |
Hitachi Ltd |
Semiconductor devices and methods for producing the same
|
US3383569A
(en)
*
|
1964-03-26 |
1968-05-14 |
Suisse Horlogerie |
Transistor-capacitor integrated circuit structure
|
US3328601A
(en)
*
|
1964-04-06 |
1967-06-27 |
Northern Electric Co |
Distributed field effect devices
|
US3298863A
(en)
*
|
1964-05-08 |
1967-01-17 |
Joseph H Mccusker |
Method for fabricating thin film transistors
|
US3446995A
(en)
*
|
1964-05-27 |
1969-05-27 |
Ibm |
Semiconductor circuits,devices and methods of improving electrical characteristics of latter
|
US3374407A
(en)
*
|
1964-06-01 |
1968-03-19 |
Rca Corp |
Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic
|
US3374406A
(en)
*
|
1964-06-01 |
1968-03-19 |
Rca Corp |
Insulated-gate field-effect transistor
|
US3408543A
(en)
*
|
1964-06-01 |
1968-10-29 |
Hitachi Ltd |
Combination capacitor and fieldeffect transistor
|
US3343049A
(en)
*
|
1964-06-18 |
1967-09-19 |
Ibm |
Semiconductor devices and passivation thereof
|
USB381501I5
(fr)
*
|
1964-07-09 |
|
|
|
US3358195A
(en)
*
|
1964-07-24 |
1967-12-12 |
Motorola Inc |
Remote cutoff field effect transistor
|
GB1066159A
(en)
*
|
1964-10-17 |
1967-04-19 |
Matsushita Electric Ind Co Ltd |
Semiconductor devices
|
US3328210A
(en)
*
|
1964-10-26 |
1967-06-27 |
North American Aviation Inc |
Method of treating semiconductor device by ionic bombardment
|
US3305708A
(en)
*
|
1964-11-25 |
1967-02-21 |
Rca Corp |
Insulated-gate field-effect semiconductor device
|
BE674294A
(fr)
*
|
1964-12-28 |
|
|
|
US3344322A
(en)
*
|
1965-01-22 |
1967-09-26 |
Hughes Aircraft Co |
Metal-oxide-semiconductor field effect transistor
|
US3391282A
(en)
*
|
1965-02-19 |
1968-07-02 |
Fairchild Camera Instr Co |
Variable length photodiode using an inversion plate
|
US3417464A
(en)
*
|
1965-05-21 |
1968-12-24 |
Ibm |
Method for fabricating insulated-gate field-effect transistors
|
US3411199A
(en)
*
|
1965-05-28 |
1968-11-19 |
Rca Corp |
Semiconductor device fabrication
|
US3419761A
(en)
*
|
1965-10-11 |
1968-12-31 |
Ibm |
Method for depositing silicon nitride insulating films and electric devices incorporating such films
|
US3412297A
(en)
*
|
1965-12-16 |
1968-11-19 |
United Aircraft Corp |
Mos field-effect transistor with a onemicron vertical channel
|
US3444442A
(en)
*
|
1966-04-27 |
1969-05-13 |
Nippon Electric Co |
Avalanche transistor having reduced width in depletion region adjacent gate surface
|
US3336486A
(en)
*
|
1966-09-06 |
1967-08-15 |
Energy Conversion Devices Inc |
Control system having multiple electrode current controlling device
|
US3544399A
(en)
*
|
1966-10-26 |
1970-12-01 |
Hughes Aircraft Co |
Insulated gate field-effect transistor (igfet) with semiconductor gate electrode
|
US3448353A
(en)
*
|
1966-11-14 |
1969-06-03 |
Westinghouse Electric Corp |
Mos field effect transistor hall effect devices
|
GB1173150A
(en)
*
|
1966-12-13 |
1969-12-03 |
Associated Semiconductor Mft |
Improvements in Insulated Gate Field Effect Transistors
|
US3569799A
(en)
*
|
1967-01-13 |
1971-03-09 |
Ibm |
Negative resistance device with controllable switching
|
US3560815A
(en)
*
|
1968-10-10 |
1971-02-02 |
Gen Electric |
Voltage-variable capacitor with extendible pn junction region
|
US3591836A
(en)
*
|
1969-03-04 |
1971-07-06 |
North American Rockwell |
Field effect conditionally switched capacitor
|
US3816769A
(en)
*
|
1969-12-17 |
1974-06-11 |
Integrated Photomatrix Ltd |
Method and circuit element for the selective charging of a semiconductor diffusion region
|
US3604990A
(en)
*
|
1970-04-01 |
1971-09-14 |
Gen Electric |
Smoothly changing voltage-variable capacitor having an extendible pn junction region
|
US3648122A
(en)
*
|
1970-06-19 |
1972-03-07 |
Bell Telephone Labor Inc |
Metal-insulator-metal solid-state rectifier
|
US3808515A
(en)
*
|
1972-11-03 |
1974-04-30 |
Bell Telephone Labor Inc |
Chopper devices and circuits
|
US3831187A
(en)
*
|
1973-04-11 |
1974-08-20 |
Rca Corp |
Thyristor having capacitively coupled control electrode
|
US3831186A
(en)
*
|
1973-04-25 |
1974-08-20 |
Sperry Rand Corp |
Controlled inversion bistable switching diode device employing barrier emitters
|
US3831185A
(en)
*
|
1973-04-25 |
1974-08-20 |
Sperry Rand Corp |
Controlled inversion bistable switching diode
|
JPS5681972A
(en)
*
|
1979-12-07 |
1981-07-04 |
Toshiba Corp |
Mos type field effect transistor
|
US4341344A
(en)
*
|
1980-02-25 |
1982-07-27 |
Russell Robert J |
Automatic draft controller
|
US4422440A
(en)
*
|
1980-02-25 |
1983-12-27 |
Russell Robert J |
Automatic draft controller
|
US4370669A
(en)
*
|
1980-07-16 |
1983-01-25 |
General Motors Corporation |
Reduced source capacitance ring-shaped IGFET load transistor in mesa-type integrated circuit
|
US4694313A
(en)
*
|
1985-02-19 |
1987-09-15 |
Harris Corporation |
Conductivity modulated semiconductor structure
|
US5262336A
(en)
*
|
1986-03-21 |
1993-11-16 |
Advanced Power Technology, Inc. |
IGBT process to produce platinum lifetime control
|
WO2012085627A1
(fr)
|
2010-12-23 |
2012-06-28 |
Universitat Politecnica De Catalunya |
Procédé de fonctionnement d'un transistor, architecture de traitement reconfigurable et utilisation d'un transistor cassé et restauré pour un fonctionnement à multiples modes
|
KR102245295B1
(ko)
|
2014-10-08 |
2021-04-27 |
삼성전자주식회사 |
실리신 물질층 및 이를 포함하는 전자 소자
|
KR102395778B1
(ko)
|
2015-09-10 |
2022-05-09 |
삼성전자주식회사 |
나노구조체 형성방법과 이를 적용한 반도체소자의 제조방법 및 나노구조체를 포함하는 반도체소자
|
KR102634054B1
(ko)
|
2018-08-06 |
2024-02-06 |
삼성전자주식회사 |
일렉트라이드 전극을 포함하는 트랜지스터
|
KR20200046840A
(ko)
|
2018-10-25 |
2020-05-07 |
삼성전자주식회사 |
실리신 전자 소자
|