NL265382A - - Google Patents

Info

Publication number
NL265382A
NL265382A NL265382DA NL265382A NL 265382 A NL265382 A NL 265382A NL 265382D A NL265382D A NL 265382DA NL 265382 A NL265382 A NL 265382A
Authority
NL
Netherlands
Application number
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Publication of NL265382A publication Critical patent/NL265382A/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/301—Electrical effects
    • H01L2924/3011—Impedance
NL265382D 1960-03-08 NL265382A (xx)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13688A US3206670A (en) 1960-03-08 1960-03-08 Semiconductor devices having dielectric coatings
US32801A US3102230A (en) 1960-03-08 1960-05-31 Electric field controlled semiconductor device

Publications (1)

Publication Number Publication Date
NL265382A true NL265382A (xx)

Family

ID=26685136

Family Applications (1)

Application Number Title Priority Date Filing Date
NL265382D NL265382A (xx) 1960-03-08

Country Status (4)

Country Link
US (2) US3206670A (xx)
DE (1) DE1439921B2 (xx)
GB (1) GB992003A (xx)
NL (1) NL265382A (xx)

Families Citing this family (64)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL265382A (xx) * 1960-03-08
DE1160106B (de) * 1960-11-11 1963-12-27 Intermetall Halbleiterverstaerker mit flaechenhaften pn-UEbergaengen mit Tunnelcharakteristik und Verfahren zum Herstellen
NL274830A (xx) * 1961-04-12
NL282170A (xx) * 1961-08-17
NL293292A (xx) * 1962-06-11
NL297002A (xx) * 1962-08-23 1900-01-01
BE637064A (xx) * 1962-09-07 Rca Corp
NL301883A (xx) * 1962-12-17
NL302841A (xx) * 1963-01-02
US3384829A (en) * 1963-02-08 1968-05-21 Nippon Electric Co Semiconductor variable capacitance element
CA759138A (en) * 1963-05-20 1967-05-16 F. Rogers Gordon Field effect transistor circuit
US3472703A (en) * 1963-06-06 1969-10-14 Hitachi Ltd Method for producing semiconductor devices
GB1071383A (en) * 1963-06-24 1967-06-07 Hitachi Ltd Field-effect semiconductor devices
DE1252276C2 (de) * 1963-08-23 1974-05-30 Verstaerker fuer elektrische hochfrequenzschwingungen
NL297331A (xx) * 1963-08-30
US3360736A (en) * 1963-09-10 1967-12-26 Hitachi Ltd Two input field effect transistor amplifier
US3263095A (en) * 1963-12-26 1966-07-26 Ibm Heterojunction surface channel transistors
DE1514082C3 (de) * 1964-02-13 1984-08-30 Kabushiki Kaisha Hitachi Seisakusho, Tokio/Tokyo Feldeffekt-Transistor
US3383569A (en) * 1964-03-26 1968-05-14 Suisse Horlogerie Transistor-capacitor integrated circuit structure
US3328601A (en) * 1964-04-06 1967-06-27 Northern Electric Co Distributed field effect devices
US3298863A (en) * 1964-05-08 1967-01-17 Joseph H Mccusker Method for fabricating thin film transistors
US3446995A (en) * 1964-05-27 1969-05-27 Ibm Semiconductor circuits,devices and methods of improving electrical characteristics of latter
US3374407A (en) * 1964-06-01 1968-03-19 Rca Corp Field-effect transistor with gate-insulator variations to achieve remote cutoff characteristic
US3408543A (en) * 1964-06-01 1968-10-29 Hitachi Ltd Combination capacitor and fieldeffect transistor
US3374406A (en) * 1964-06-01 1968-03-19 Rca Corp Insulated-gate field-effect transistor
US3343049A (en) * 1964-06-18 1967-09-19 Ibm Semiconductor devices and passivation thereof
USB381501I5 (xx) * 1964-07-09
US3358195A (en) * 1964-07-24 1967-12-12 Motorola Inc Remote cutoff field effect transistor
GB1066159A (en) * 1964-10-17 1967-04-19 Matsushita Electric Ind Co Ltd Semiconductor devices
US3328210A (en) * 1964-10-26 1967-06-27 North American Aviation Inc Method of treating semiconductor device by ionic bombardment
US3305708A (en) * 1964-11-25 1967-02-21 Rca Corp Insulated-gate field-effect semiconductor device
BE674294A (xx) * 1964-12-28
US3344322A (en) * 1965-01-22 1967-09-26 Hughes Aircraft Co Metal-oxide-semiconductor field effect transistor
US3391282A (en) * 1965-02-19 1968-07-02 Fairchild Camera Instr Co Variable length photodiode using an inversion plate
US3417464A (en) * 1965-05-21 1968-12-24 Ibm Method for fabricating insulated-gate field-effect transistors
US3411199A (en) * 1965-05-28 1968-11-19 Rca Corp Semiconductor device fabrication
US3419761A (en) * 1965-10-11 1968-12-31 Ibm Method for depositing silicon nitride insulating films and electric devices incorporating such films
US3412297A (en) * 1965-12-16 1968-11-19 United Aircraft Corp Mos field-effect transistor with a onemicron vertical channel
US3444442A (en) * 1966-04-27 1969-05-13 Nippon Electric Co Avalanche transistor having reduced width in depletion region adjacent gate surface
US3336486A (en) * 1966-09-06 1967-08-15 Energy Conversion Devices Inc Control system having multiple electrode current controlling device
US3544399A (en) * 1966-10-26 1970-12-01 Hughes Aircraft Co Insulated gate field-effect transistor (igfet) with semiconductor gate electrode
US3448353A (en) * 1966-11-14 1969-06-03 Westinghouse Electric Corp Mos field effect transistor hall effect devices
GB1173150A (en) * 1966-12-13 1969-12-03 Associated Semiconductor Mft Improvements in Insulated Gate Field Effect Transistors
US3569799A (en) * 1967-01-13 1971-03-09 Ibm Negative resistance device with controllable switching
US3560815A (en) * 1968-10-10 1971-02-02 Gen Electric Voltage-variable capacitor with extendible pn junction region
US3591836A (en) * 1969-03-04 1971-07-06 North American Rockwell Field effect conditionally switched capacitor
US3816769A (en) * 1969-12-17 1974-06-11 Integrated Photomatrix Ltd Method and circuit element for the selective charging of a semiconductor diffusion region
US3604990A (en) * 1970-04-01 1971-09-14 Gen Electric Smoothly changing voltage-variable capacitor having an extendible pn junction region
US3648122A (en) * 1970-06-19 1972-03-07 Bell Telephone Labor Inc Metal-insulator-metal solid-state rectifier
US3808515A (en) * 1972-11-03 1974-04-30 Bell Telephone Labor Inc Chopper devices and circuits
US3831187A (en) * 1973-04-11 1974-08-20 Rca Corp Thyristor having capacitively coupled control electrode
US3831186A (en) * 1973-04-25 1974-08-20 Sperry Rand Corp Controlled inversion bistable switching diode device employing barrier emitters
US3831185A (en) * 1973-04-25 1974-08-20 Sperry Rand Corp Controlled inversion bistable switching diode
JPS5681972A (en) * 1979-12-07 1981-07-04 Toshiba Corp Mos type field effect transistor
US4422440A (en) * 1980-02-25 1983-12-27 Russell Robert J Automatic draft controller
US4341344A (en) * 1980-02-25 1982-07-27 Russell Robert J Automatic draft controller
US4370669A (en) * 1980-07-16 1983-01-25 General Motors Corporation Reduced source capacitance ring-shaped IGFET load transistor in mesa-type integrated circuit
US4694313A (en) * 1985-02-19 1987-09-15 Harris Corporation Conductivity modulated semiconductor structure
US5262336A (en) * 1986-03-21 1993-11-16 Advanced Power Technology, Inc. IGBT process to produce platinum lifetime control
WO2012085627A1 (en) 2010-12-23 2012-06-28 Universitat Politecnica De Catalunya Method for operating a transistor, reconfigurable processing architecture and use of a restored broken down transistor for a multiple mode operation
KR102245295B1 (ko) 2014-10-08 2021-04-27 삼성전자주식회사 실리신 물질층 및 이를 포함하는 전자 소자
KR102395778B1 (ko) 2015-09-10 2022-05-09 삼성전자주식회사 나노구조체 형성방법과 이를 적용한 반도체소자의 제조방법 및 나노구조체를 포함하는 반도체소자
KR102634054B1 (ko) 2018-08-06 2024-02-06 삼성전자주식회사 일렉트라이드 전극을 포함하는 트랜지스터
KR20200046840A (ko) 2018-10-25 2020-05-07 삼성전자주식회사 실리신 전자 소자

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL121810C (xx) * 1955-11-04
US2918628A (en) * 1957-01-23 1959-12-22 Otmar M Stuetzer Semiconductor amplifier
US2900531A (en) * 1957-02-28 1959-08-18 Rca Corp Field-effect transistor
US3074804A (en) * 1957-11-29 1963-01-22 Nat Res Dev Intergranular barrier layer dielectric ceramic compositions and the method of production thereof
US2991371A (en) * 1959-06-15 1961-07-04 Sprague Electric Co Variable capacitor
NL265382A (xx) * 1960-03-08
NL267831A (xx) * 1960-08-17

Also Published As

Publication number Publication date
US3102230A (en) 1963-08-27
GB992003A (en) 1965-05-12
DE1439921B2 (de) 1974-10-03
US3206670A (en) 1965-09-14
DE1439921A1 (de) 1968-11-28

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