FR1484390A - Procédé de fabrication de dispositifs semi-conducteurs - Google Patents

Procédé de fabrication de dispositifs semi-conducteurs

Info

Publication number
FR1484390A
FR1484390A FR66600A FR66600A FR1484390A FR 1484390 A FR1484390 A FR 1484390A FR 66600 A FR66600 A FR 66600A FR 66600 A FR66600 A FR 66600A FR 1484390 A FR1484390 A FR 1484390A
Authority
FR
France
Prior art keywords
semiconductor device
manufacturing process
device manufacturing
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR66600A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ion Physics Corp
Original Assignee
Ion Physics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US466218A external-priority patent/US3388009A/en
Application filed by Ion Physics Corp filed Critical Ion Physics Corp
Priority to FR66600A priority Critical patent/FR1484390A/fr
Application granted granted Critical
Publication of FR1484390A publication Critical patent/FR1484390A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • H01L21/2652—Through-implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
FR66600A 1965-06-23 1966-06-23 Procédé de fabrication de dispositifs semi-conducteurs Expired FR1484390A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR66600A FR1484390A (fr) 1965-06-23 1966-06-23 Procédé de fabrication de dispositifs semi-conducteurs

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US466218A US3388009A (en) 1965-06-23 1965-06-23 Method of forming a p-n junction by an ionic beam
FR66600A FR1484390A (fr) 1965-06-23 1966-06-23 Procédé de fabrication de dispositifs semi-conducteurs

Publications (1)

Publication Number Publication Date
FR1484390A true FR1484390A (fr) 1967-06-09

Family

ID=26171518

Family Applications (1)

Application Number Title Priority Date Filing Date
FR66600A Expired FR1484390A (fr) 1965-06-23 1966-06-23 Procédé de fabrication de dispositifs semi-conducteurs

Country Status (1)

Country Link
FR (1) FR1484390A (fr)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2046925A1 (fr) * 1969-06-19 1971-03-12 Tokyo Shibaura Electric Co
FR2083349A1 (fr) * 1970-03-17 1971-12-17 Western Electric Co

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2046925A1 (fr) * 1969-06-19 1971-03-12 Tokyo Shibaura Electric Co
FR2083349A1 (fr) * 1970-03-17 1971-12-17 Western Electric Co

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