FR1538402A - Procédé de fabrication de dispositifs semi-conducteurs intégrés - Google Patents

Procédé de fabrication de dispositifs semi-conducteurs intégrés

Info

Publication number
FR1538402A
FR1538402A FR112633A FR112633A FR1538402A FR 1538402 A FR1538402 A FR 1538402A FR 112633 A FR112633 A FR 112633A FR 112633 A FR112633 A FR 112633A FR 1538402 A FR1538402 A FR 1538402A
Authority
FR
France
Prior art keywords
manufacturing process
semiconductor devices
integrated semiconductor
integrated
devices
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR112633A
Other languages
English (en)
Inventor
Jacques Thire
Rene Glaise
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RADIOTECHNIQUE COPRIM RTC
Original Assignee
RADIOTECHNIQUE COPRIM RTC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RADIOTECHNIQUE COPRIM RTC filed Critical RADIOTECHNIQUE COPRIM RTC
Priority to FR112633A priority Critical patent/FR1538402A/fr
Application granted granted Critical
Publication of FR1538402A publication Critical patent/FR1538402A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0635—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors and diodes, or resistors, or capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
FR112633A 1967-06-30 1967-06-30 Procédé de fabrication de dispositifs semi-conducteurs intégrés Expired FR1538402A (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
FR112633A FR1538402A (fr) 1967-06-30 1967-06-30 Procédé de fabrication de dispositifs semi-conducteurs intégrés

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR112633A FR1538402A (fr) 1967-06-30 1967-06-30 Procédé de fabrication de dispositifs semi-conducteurs intégrés

Publications (1)

Publication Number Publication Date
FR1538402A true FR1538402A (fr) 1968-09-06

Family

ID=8634220

Family Applications (1)

Application Number Title Priority Date Filing Date
FR112633A Expired FR1538402A (fr) 1967-06-30 1967-06-30 Procédé de fabrication de dispositifs semi-conducteurs intégrés

Country Status (1)

Country Link
FR (1) FR1538402A (fr)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2020370A1 (fr) * 1968-10-11 1970-07-10 Ibm
DE2247911A1 (de) * 1971-09-30 1973-04-05 Sony Corp Monolithische integrierte schaltung
DE2212168A1 (de) * 1972-03-14 1973-09-20 Ibm Deutschland Monolithisch integrierte halbleiterstruktur
FR2523370A1 (fr) * 1982-03-12 1983-09-16 Thomson Csf Transistor pnp fort courant faisant partie d'un circuit integre monolithique

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2020370A1 (fr) * 1968-10-11 1970-07-10 Ibm
DE2247911A1 (de) * 1971-09-30 1973-04-05 Sony Corp Monolithische integrierte schaltung
FR2154786A1 (fr) * 1971-09-30 1973-05-11 Sony Corp
JPS4842685A (fr) * 1971-09-30 1973-06-21
DE2212168A1 (de) * 1972-03-14 1973-09-20 Ibm Deutschland Monolithisch integrierte halbleiterstruktur
FR2523370A1 (fr) * 1982-03-12 1983-09-16 Thomson Csf Transistor pnp fort courant faisant partie d'un circuit integre monolithique
EP0090686A1 (fr) * 1982-03-12 1983-10-05 Thomson-Csf Transistor PNP fort courant faisant partie d'un circuit intégré monolithique
US4564855A (en) * 1982-03-12 1986-01-14 Thomson Csf High current PNP transistor forming part of an integrated monolithic circuit

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