FR1517241A - Procédé de fabrication des dispositifs à semi-conducteurs - Google Patents

Procédé de fabrication des dispositifs à semi-conducteurs

Info

Publication number
FR1517241A
FR1517241A FR100634A FR100634A FR1517241A FR 1517241 A FR1517241 A FR 1517241A FR 100634 A FR100634 A FR 100634A FR 100634 A FR100634 A FR 100634A FR 1517241 A FR1517241 A FR 1517241A
Authority
FR
France
Prior art keywords
semiconductor device
manufacturing process
device manufacturing
semiconductor
manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
FR100634A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Application granted granted Critical
Publication of FR1517241A publication Critical patent/FR1517241A/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/12—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/14—Deposition of only one other metal element
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/142—Semiconductor-metal-semiconductor
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T428/00—Stock material or miscellaneous articles
    • Y10T428/31504—Composite [nonstructural laminate]
    • Y10T428/31678—Of metal

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
FR100634A 1966-03-29 1967-03-29 Procédé de fabrication des dispositifs à semi-conducteurs Expired FR1517241A (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2020866 1966-03-29
JP1020866 1966-03-29

Publications (1)

Publication Number Publication Date
FR1517241A true FR1517241A (fr) 1968-03-15

Family

ID=26345437

Family Applications (1)

Application Number Title Priority Date Filing Date
FR100634A Expired FR1517241A (fr) 1966-03-29 1967-03-29 Procédé de fabrication des dispositifs à semi-conducteurs

Country Status (8)

Country Link
US (1) US3515583A (fr)
BE (1) BE696170A (fr)
CH (1) CH474856A (fr)
DE (1) DE1614140B2 (fr)
FR (1) FR1517241A (fr)
GB (1) GB1107700A (fr)
NL (1) NL149860B (fr)
SE (1) SE336848B (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2058238A1 (fr) * 1969-08-13 1971-05-28 Varian Associates

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3664874A (en) * 1969-12-31 1972-05-23 Nasa Tungsten contacts on silicon substrates
DE2012063A1 (de) * 1970-03-13 1971-09-30 Siemens Ag Verfahren zum Herstellen von aus Alu minium Legierungen bestehenden Kontakt metallschichten an Halbleiterbauelementen
US4024299A (en) * 1973-10-15 1977-05-17 General Electric Company Process for preparing magnetic member
FR2396974A1 (fr) 1977-07-04 1979-02-02 Anvar Procede de detection et d'etude d'une activite cellulaire ou analogue et moyens pour la mise en oeuvre d'un tel procede
US4206540A (en) * 1978-06-02 1980-06-10 International Rectifier Corporation Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier
DE3279114D1 (en) * 1981-05-15 1988-11-17 Fairchild Semiconductor Schottky diode - polycrystalline silicon resistor memory cell
JP6839939B2 (ja) * 2016-07-26 2021-03-10 株式会社Ｓｃｒｅｅｎホールディングス 熱処理方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1226925A (en) * 1915-08-09 1917-05-22 Arthur J Thowless Ductile filament.
US2475601A (en) * 1946-04-26 1949-07-12 Ohio Commw Eng Co Bonding of metal carbonyl deposits
US3349297A (en) * 1964-06-23 1967-10-24 Bell Telephone Labor Inc Surface barrier semiconductor translating device
DE1289188B (de) * 1964-12-15 1969-02-13 Telefunken Patent Metallbasistransistor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2058238A1 (fr) * 1969-08-13 1971-05-28 Varian Associates

Also Published As

Publication number Publication date
US3515583A (en) 1970-06-02
DE1614140B2 (de) 1971-08-19
BE696170A (fr) 1967-09-01
SE336848B (fr) 1971-07-19
GB1107700A (en) 1968-03-27
CH474856A (de) 1969-06-30
NL6704438A (fr) 1967-10-02
DE1614140A1 (de) 1971-02-25
NL149860B (nl) 1976-06-15

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