BE696170A - - Google Patents
Info
- Publication number
- BE696170A BE696170A BE696170DA BE696170A BE 696170 A BE696170 A BE 696170A BE 696170D A BE696170D A BE 696170DA BE 696170 A BE696170 A BE 696170A
- Authority
- BE
- Belgium
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/12—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
- C23C16/14—Deposition of only one other metal element
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S148/00—Metal treatment
- Y10S148/142—Semiconductor-metal-semiconductor
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/31504—Composite [nonstructural laminate]
- Y10T428/31678—Of metal
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2020866 | 1966-03-29 | ||
| JP1020866 | 1966-03-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE696170A true BE696170A (xx) | 1967-09-01 |
Family
ID=26345437
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE696170D BE696170A (xx) | 1966-03-29 | 1967-03-28 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US3515583A (xx) |
| BE (1) | BE696170A (xx) |
| CH (1) | CH474856A (xx) |
| DE (1) | DE1614140B2 (xx) |
| FR (1) | FR1517241A (xx) |
| GB (1) | GB1107700A (xx) |
| NL (1) | NL149860B (xx) |
| SE (1) | SE336848B (xx) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3562606A (en) * | 1969-08-13 | 1971-02-09 | Varian Associates | Subsurface gallium arsenide schottky-type diode and method of fabricating same |
| US3664874A (en) * | 1969-12-31 | 1972-05-23 | Nasa | Tungsten contacts on silicon substrates |
| DE2012031A1 (de) * | 1970-03-13 | 1971-09-23 | Siemens Ag | Verfahren zum Herstellen von aus Chrom oder Molybdän bestehenden Kontaktmetallschichten in Halbleiterbauelementen |
| US4024299A (en) * | 1973-10-15 | 1977-05-17 | General Electric Company | Process for preparing magnetic member |
| FR2396974A1 (fr) | 1977-07-04 | 1979-02-02 | Anvar | Procede de detection et d'etude d'une activite cellulaire ou analogue et moyens pour la mise en oeuvre d'un tel procede |
| US4206540A (en) * | 1978-06-02 | 1980-06-10 | International Rectifier Corporation | Schottky device and method of manufacture using palladium and platinum intermetallic alloys and titanium barrier |
| JPS57194569A (en) * | 1981-05-15 | 1982-11-30 | Fairchild Camera Instr Co | Schottky diode polysilicon resistor memory cell |
| JP6839939B2 (ja) * | 2016-07-26 | 2021-03-10 | 株式会社Ｓｃｒｅｅｎホールディングス | 熱処理方法 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US1226925A (en) * | 1915-08-09 | 1917-05-22 | Arthur J Thowless | Ductile filament. |
| US2475601A (en) * | 1946-04-26 | 1949-07-12 | Ohio Commw Eng Co | Bonding of metal carbonyl deposits |
| US3349297A (en) * | 1964-06-23 | 1967-10-24 | Bell Telephone Labor Inc | Surface barrier semiconductor translating device |
| DE1289188B (de) * | 1964-12-15 | 1969-02-13 | Telefunken Patent | Metallbasistransistor |
-
1967
- 1967-03-14 GB GB1189067A patent/GB1107700A/en not_active Expired
- 1967-03-20 US US3515583D patent/US3515583A/en not_active Expired - Lifetime
- 1967-03-23 CH CH420667A patent/CH474856A/de not_active IP Right Cessation
- 1967-03-23 DE DE19671614140 patent/DE1614140B2/de not_active Withdrawn
- 1967-03-28 BE BE696170D patent/BE696170A/xx unknown
- 1967-03-28 NL NL6704438A patent/NL149860B/xx unknown
- 1967-03-29 SE SE426767A patent/SE336848B/xx unknown
- 1967-03-29 FR FR100634A patent/FR1517241A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| SE336848B (xx) | 1971-07-19 |
| NL6704438A (xx) | 1967-10-02 |
| NL149860B (nl) | 1976-06-15 |
| GB1107700A (en) | 1968-03-27 |
| US3515583A (en) | 1970-06-02 |
| DE1614140A1 (de) | 1971-02-25 |
| FR1517241A (fr) | 1968-03-15 |
| DE1614140B2 (de) | 1971-08-19 |
| CH474856A (de) | 1969-06-30 |