FR2154786A1 - - Google Patents

Info

Publication number
FR2154786A1
FR2154786A1 FR7234838A FR7234838A FR2154786A1 FR 2154786 A1 FR2154786 A1 FR 2154786A1 FR 7234838 A FR7234838 A FR 7234838A FR 7234838 A FR7234838 A FR 7234838A FR 2154786 A1 FR2154786 A1 FR 2154786A1
Authority
FR
France
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7234838A
Other versions
FR2154786B1 (fr
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of FR2154786A1 publication Critical patent/FR2154786A1/fr
Application granted granted Critical
Publication of FR2154786B1 publication Critical patent/FR2154786B1/fr
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
FR7234838A 1971-09-30 1972-10-02 Expired FR2154786B1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46076438A JPS4842685A (fr) 1971-09-30 1971-09-30

Publications (2)

Publication Number Publication Date
FR2154786A1 true FR2154786A1 (fr) 1973-05-11
FR2154786B1 FR2154786B1 (fr) 1978-03-10

Family

ID=13605139

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7234838A Expired FR2154786B1 (fr) 1971-09-30 1972-10-02

Country Status (7)

Country Link
JP (1) JPS4842685A (fr)
CA (1) CA959973A (fr)
DE (1) DE2247911C2 (fr)
FR (1) FR2154786B1 (fr)
GB (1) GB1368190A (fr)
IT (1) IT966124B (fr)
NL (1) NL7213284A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2309040A1 (fr) * 1975-04-22 1976-11-19 Tokyo Shibaura Electric Co Circuit integre comportant un transistor vertical a base epitaxiale
FR2523370A1 (fr) * 1982-03-12 1983-09-16 Thomson Csf Transistor pnp fort courant faisant partie d'un circuit integre monolithique
EP0413256A2 (fr) * 1989-08-18 1991-02-20 Motorola, Inc. Structure semiconductrice pour des circuits intégrés à haute puissance
EP0420672A1 (fr) * 1989-09-29 1991-04-03 Kabushiki Kaisha Toshiba Structure pour substrat semi-conducteur utilisée dans un dispositif IC à haute puissance
EP0424926A2 (fr) * 1989-10-24 1991-05-02 Kabushiki Kaisha Toshiba Circuit intégré du type BiCMOS

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2740449C2 (de) * 1977-09-08 1986-08-21 Röhm GmbH, 6100 Darmstadt Verfahren zur Herstellung von Schmierölzusätzen
US4261703A (en) * 1978-05-25 1981-04-14 Exxon Research & Engineering Co. Additive combinations and fuels containing them
JPS61126120A (ja) * 1984-11-22 1986-06-13 Mitsui Petrochem Ind Ltd 液状変性エチレン系ランダム共重合体

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1538402A (fr) * 1967-06-30 1968-09-06 Radiotechnique Coprim Rtc Procédé de fabrication de dispositifs semi-conducteurs intégrés

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3460006A (en) * 1966-02-28 1969-08-05 Westinghouse Electric Corp Semiconductor integrated circuits with improved isolation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1538402A (fr) * 1967-06-30 1968-09-06 Radiotechnique Coprim Rtc Procédé de fabrication de dispositifs semi-conducteurs intégrés

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
REVUE US "IEEE TRANSACTIONS ON ELECTRON DEVICES", VOL. ED.18, NO. 1, JANVIER 1971. "A NEW TECHNOLOGY FOR HIGH-POWER IC", ISAMU KOBAYASHI, PAGES 45-49.) *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2309040A1 (fr) * 1975-04-22 1976-11-19 Tokyo Shibaura Electric Co Circuit integre comportant un transistor vertical a base epitaxiale
FR2523370A1 (fr) * 1982-03-12 1983-09-16 Thomson Csf Transistor pnp fort courant faisant partie d'un circuit integre monolithique
EP0090686A1 (fr) * 1982-03-12 1983-10-05 Thomson-Csf Transistor PNP fort courant faisant partie d'un circuit intégré monolithique
US4564855A (en) * 1982-03-12 1986-01-14 Thomson Csf High current PNP transistor forming part of an integrated monolithic circuit
EP0413256A2 (fr) * 1989-08-18 1991-02-20 Motorola, Inc. Structure semiconductrice pour des circuits intégrés à haute puissance
EP0413256A3 (en) * 1989-08-18 1992-07-22 Motorola, Inc. Semiconductor structure for high power integrated circuits
EP0420672A1 (fr) * 1989-09-29 1991-04-03 Kabushiki Kaisha Toshiba Structure pour substrat semi-conducteur utilisée dans un dispositif IC à haute puissance
US5159427A (en) * 1989-09-29 1992-10-27 Kabushiki Kaisha Toshiba Semiconductor substrate structure for use in power ic device
EP0424926A2 (fr) * 1989-10-24 1991-05-02 Kabushiki Kaisha Toshiba Circuit intégré du type BiCMOS
EP0424926A3 (en) * 1989-10-24 1992-04-15 Kabushiki Kaisha Toshiba Bi-cmos integrated circuit

Also Published As

Publication number Publication date
FR2154786B1 (fr) 1978-03-10
DE2247911C2 (de) 1985-01-17
CA959973A (en) 1974-12-24
JPS4842685A (fr) 1973-06-21
IT966124B (it) 1974-02-11
NL7213284A (fr) 1973-04-03
GB1368190A (en) 1974-09-25
DE2247911A1 (de) 1973-04-05

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Legal Events

Date Code Title Description
ST Notification of lapse