JPS4842685A - - Google Patents

Info

Publication number
JPS4842685A
JPS4842685A JP46076438A JP7643871A JPS4842685A JP S4842685 A JPS4842685 A JP S4842685A JP 46076438 A JP46076438 A JP 46076438A JP 7643871 A JP7643871 A JP 7643871A JP S4842685 A JPS4842685 A JP S4842685A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP46076438A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP46076438A priority Critical patent/JPS4842685A/ja
Priority to GB4488272A priority patent/GB1368190A/en
Priority to CA152,897A priority patent/CA959973A/en
Priority to DE19722247911 priority patent/DE2247911C2/de
Priority to IT5308172A priority patent/IT966124B/it
Priority to FR7234838A priority patent/FR2154786B1/fr
Priority to NL7213284A priority patent/NL7213284A/xx
Publication of JPS4842685A publication Critical patent/JPS4842685A/ja
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Element Separation (AREA)
JP46076438A 1971-09-30 1971-09-30 Pending JPS4842685A (ja)

Priority Applications (7)

Application Number Priority Date Filing Date Title
JP46076438A JPS4842685A (ja) 1971-09-30 1971-09-30
GB4488272A GB1368190A (en) 1971-09-30 1972-09-28 Monolithic integrated circuit
CA152,897A CA959973A (en) 1971-09-30 1972-09-29 Monolithic integrated circuit
DE19722247911 DE2247911C2 (de) 1971-09-30 1972-09-29 Monolithisch integrierte Schaltungsanordnung
IT5308172A IT966124B (it) 1971-09-30 1972-09-30 Circuito integrato monolitico e metodo per produrlo
FR7234838A FR2154786B1 (ja) 1971-09-30 1972-10-02
NL7213284A NL7213284A (ja) 1971-09-30 1972-10-02

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46076438A JPS4842685A (ja) 1971-09-30 1971-09-30

Publications (1)

Publication Number Publication Date
JPS4842685A true JPS4842685A (ja) 1973-06-21

Family

ID=13605139

Family Applications (1)

Application Number Title Priority Date Filing Date
JP46076438A Pending JPS4842685A (ja) 1971-09-30 1971-09-30

Country Status (7)

Country Link
JP (1) JPS4842685A (ja)
CA (1) CA959973A (ja)
DE (1) DE2247911C2 (ja)
FR (1) FR2154786B1 (ja)
GB (1) GB1368190A (ja)
IT (1) IT966124B (ja)
NL (1) NL7213284A (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5450547A (en) * 1977-09-08 1979-04-20 Roehm Gmbh Preparation of polymer solution improving viscosityytemparature relation and low temperature performance
JPS54155204A (en) * 1978-05-25 1979-12-07 Exxon Research Engineering Co Multiiingredient additive combination for fuel oil and fuel oil containing it
JPS61126120A (ja) * 1984-11-22 1986-06-13 Mitsui Petrochem Ind Ltd 液状変性エチレン系ランダム共重合体

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123577A (en) * 1975-04-22 1976-10-28 Toshiba Corp Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor
FR2523370B1 (fr) * 1982-03-12 1985-12-13 Thomson Csf Transistor pnp fort courant faisant partie d'un circuit integre monolithique
US5070382A (en) * 1989-08-18 1991-12-03 Motorola, Inc. Semiconductor structure for high power integrated circuits
JP2835116B2 (ja) * 1989-09-29 1998-12-14 株式会社東芝 電力用ｉｃおよびその製造方法
JPH03138974A (ja) * 1989-10-24 1991-06-13 Toshiba Corp Ｂｉ―ＣＭＯＳ集積回路

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1538402A (fr) * 1967-06-30 1968-09-06 Radiotechnique Coprim Rtc Procédé de fabrication de dispositifs semi-conducteurs intégrés

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3460006A (en) * 1966-02-28 1969-08-05 Westinghouse Electric Corp Semiconductor integrated circuits with improved isolation

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR1538402A (fr) * 1967-06-30 1968-09-06 Radiotechnique Coprim Rtc Procédé de fabrication de dispositifs semi-conducteurs intégrés

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5450547A (en) * 1977-09-08 1979-04-20 Roehm Gmbh Preparation of polymer solution improving viscosityytemparature relation and low temperature performance
JPS626600B2 (ja) * 1977-09-08 1987-02-12 Roehm Gmbh
JPS54155204A (en) * 1978-05-25 1979-12-07 Exxon Research Engineering Co Multiiingredient additive combination for fuel oil and fuel oil containing it
JPH0142995B2 (ja) * 1978-05-25 1989-09-18 Exxon Research Engineering Co
JPS61126120A (ja) * 1984-11-22 1986-06-13 Mitsui Petrochem Ind Ltd 液状変性エチレン系ランダム共重合体
JPH0134525B2 (ja) * 1984-11-22 1989-07-19 Mitsui Petrochemical Ind

Also Published As

Publication number Publication date
GB1368190A (en) 1974-09-25
NL7213284A (ja) 1973-04-03
DE2247911A1 (de) 1973-04-05
CA959973A (en) 1974-12-24
IT966124B (it) 1974-02-11
FR2154786A1 (ja) 1973-05-11
DE2247911C2 (de) 1985-01-17
FR2154786B1 (ja) 1978-03-10

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