JPS4842685A - - Google Patents
Info
- Publication number
- JPS4842685A JPS4842685A JP46076438A JP7643871A JPS4842685A JP S4842685 A JPS4842685 A JP S4842685A JP 46076438 A JP46076438 A JP 46076438A JP 7643871 A JP7643871 A JP 7643871A JP S4842685 A JPS4842685 A JP S4842685A
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0623—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Element Separation (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP46076438A JPS4842685A (ja) | 1971-09-30 | 1971-09-30 | |
GB4488272A GB1368190A (en) | 1971-09-30 | 1972-09-28 | Monolithic integrated circuit |
CA152,897A CA959973A (en) | 1971-09-30 | 1972-09-29 | Monolithic integrated circuit |
DE19722247911 DE2247911C2 (de) | 1971-09-30 | 1972-09-29 | Monolithisch integrierte Schaltungsanordnung |
IT5308172A IT966124B (it) | 1971-09-30 | 1972-09-30 | Circuito integrato monolitico e metodo per produrlo |
FR7234838A FR2154786B1 (ja) | 1971-09-30 | 1972-10-02 | |
NL7213284A NL7213284A (ja) | 1971-09-30 | 1972-10-02 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP46076438A JPS4842685A (ja) | 1971-09-30 | 1971-09-30 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS4842685A true JPS4842685A (ja) | 1973-06-21 |
Family
ID=13605139
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP46076438A Pending JPS4842685A (ja) | 1971-09-30 | 1971-09-30 |
Country Status (7)
Country | Link |
---|---|
JP (1) | JPS4842685A (ja) |
CA (1) | CA959973A (ja) |
DE (1) | DE2247911C2 (ja) |
FR (1) | FR2154786B1 (ja) |
GB (1) | GB1368190A (ja) |
IT (1) | IT966124B (ja) |
NL (1) | NL7213284A (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5450547A (en) * | 1977-09-08 | 1979-04-20 | Roehm Gmbh | Preparation of polymer solution improving viscosityytemparature relation and low temperature performance |
JPS54155204A (en) * | 1978-05-25 | 1979-12-07 | Exxon Research Engineering Co | Multiiingredient additive combination for fuel oil and fuel oil containing it |
JPS61126120A (ja) * | 1984-11-22 | 1986-06-13 | Mitsui Petrochem Ind Ltd | 液状変性エチレン系ランダム共重合体 |
Families Citing this family (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS51123577A (en) * | 1975-04-22 | 1976-10-28 | Toshiba Corp | Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor |
FR2523370B1 (fr) * | 1982-03-12 | 1985-12-13 | Thomson Csf | Transistor pnp fort courant faisant partie d'un circuit integre monolithique |
US5070382A (en) * | 1989-08-18 | 1991-12-03 | Motorola, Inc. | Semiconductor structure for high power integrated circuits |
JP2835116B2 (ja) * | 1989-09-29 | 1998-12-14 | 株式会社東芝 | 電力用icおよびその製造方法 |
JPH03138974A (ja) * | 1989-10-24 | 1991-06-13 | Toshiba Corp | Bi―CMOS集積回路 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1538402A (fr) * | 1967-06-30 | 1968-09-06 | Radiotechnique Coprim Rtc | Procédé de fabrication de dispositifs semi-conducteurs intégrés |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3460006A (en) * | 1966-02-28 | 1969-08-05 | Westinghouse Electric Corp | Semiconductor integrated circuits with improved isolation |
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1971
- 1971-09-30 JP JP46076438A patent/JPS4842685A/ja active Pending
-
1972
- 1972-09-28 GB GB4488272A patent/GB1368190A/en not_active Expired
- 1972-09-29 CA CA152,897A patent/CA959973A/en not_active Expired
- 1972-09-29 DE DE19722247911 patent/DE2247911C2/de not_active Expired
- 1972-09-30 IT IT5308172A patent/IT966124B/it active
- 1972-10-02 NL NL7213284A patent/NL7213284A/xx not_active Application Discontinuation
- 1972-10-02 FR FR7234838A patent/FR2154786B1/fr not_active Expired
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR1538402A (fr) * | 1967-06-30 | 1968-09-06 | Radiotechnique Coprim Rtc | Procédé de fabrication de dispositifs semi-conducteurs intégrés |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5450547A (en) * | 1977-09-08 | 1979-04-20 | Roehm Gmbh | Preparation of polymer solution improving viscosityytemparature relation and low temperature performance |
JPS626600B2 (ja) * | 1977-09-08 | 1987-02-12 | Roehm Gmbh | |
JPS54155204A (en) * | 1978-05-25 | 1979-12-07 | Exxon Research Engineering Co | Multiiingredient additive combination for fuel oil and fuel oil containing it |
JPH0142995B2 (ja) * | 1978-05-25 | 1989-09-18 | Exxon Research Engineering Co | |
JPS61126120A (ja) * | 1984-11-22 | 1986-06-13 | Mitsui Petrochem Ind Ltd | 液状変性エチレン系ランダム共重合体 |
JPH0134525B2 (ja) * | 1984-11-22 | 1989-07-19 | Mitsui Petrochemical Ind |
Also Published As
Publication number | Publication date |
---|---|
GB1368190A (en) | 1974-09-25 |
NL7213284A (ja) | 1973-04-03 |
DE2247911A1 (de) | 1973-04-05 |
CA959973A (en) | 1974-12-24 |
IT966124B (it) | 1974-02-11 |
FR2154786A1 (ja) | 1973-05-11 |
DE2247911C2 (de) | 1985-01-17 |
FR2154786B1 (ja) | 1978-03-10 |