GB1368190A - Monolithic integrated circuit - Google Patents

Monolithic integrated circuit

Info

Publication number
GB1368190A
GB1368190A GB4488272A GB4488272A GB1368190A GB 1368190 A GB1368190 A GB 1368190A GB 4488272 A GB4488272 A GB 4488272A GB 4488272 A GB4488272 A GB 4488272A GB 1368190 A GB1368190 A GB 1368190A
Authority
GB
United Kingdom
Prior art keywords
type
layer
regions
region
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4488272A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1368190A publication Critical patent/GB1368190A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0611Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
    • H01L27/0617Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
    • H01L27/0623Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with bipolar transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
GB4488272A 1971-09-30 1972-09-28 Monolithic integrated circuit Expired GB1368190A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP46076438A JPS4842685A (ja) 1971-09-30 1971-09-30

Publications (1)

Publication Number Publication Date
GB1368190A true GB1368190A (en) 1974-09-25

Family

ID=13605139

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4488272A Expired GB1368190A (en) 1971-09-30 1972-09-28 Monolithic integrated circuit

Country Status (7)

Country Link
JP (1) JPS4842685A (ja)
CA (1) CA959973A (ja)
DE (1) DE2247911C2 (ja)
FR (1) FR2154786B1 (ja)
GB (1) GB1368190A (ja)
IT (1) IT966124B (ja)
NL (1) NL7213284A (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123577A (en) * 1975-04-22 1976-10-28 Toshiba Corp Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor
DE2740449C2 (de) * 1977-09-08 1986-08-21 Röhm GmbH, 6100 Darmstadt Verfahren zur Herstellung von Schmierölzusätzen
US4261703A (en) * 1978-05-25 1981-04-14 Exxon Research & Engineering Co. Additive combinations and fuels containing them
FR2523370B1 (fr) * 1982-03-12 1985-12-13 Thomson Csf Transistor pnp fort courant faisant partie d'un circuit integre monolithique
JPS61126120A (ja) * 1984-11-22 1986-06-13 Mitsui Petrochem Ind Ltd 液状変性エチレン系ランダム共重合体
US5070382A (en) * 1989-08-18 1991-12-03 Motorola, Inc. Semiconductor structure for high power integrated circuits
JP2835116B2 (ja) * 1989-09-29 1998-12-14 株式会社東芝 電力用icおよびその製造方法
JPH03138974A (ja) * 1989-10-24 1991-06-13 Toshiba Corp Bi―CMOS集積回路

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3460006A (en) * 1966-02-28 1969-08-05 Westinghouse Electric Corp Semiconductor integrated circuits with improved isolation
FR1538402A (fr) * 1967-06-30 1968-09-06 Radiotechnique Coprim Rtc Procédé de fabrication de dispositifs semi-conducteurs intégrés

Also Published As

Publication number Publication date
IT966124B (it) 1974-02-11
FR2154786B1 (ja) 1978-03-10
FR2154786A1 (ja) 1973-05-11
CA959973A (en) 1974-12-24
DE2247911A1 (de) 1973-04-05
DE2247911C2 (de) 1985-01-17
NL7213284A (ja) 1973-04-03
JPS4842685A (ja) 1973-06-21

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee