JPS51123577A - Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor - Google Patents

Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor

Info

Publication number
JPS51123577A
JPS51123577A JP50048189A JP4818975A JPS51123577A JP S51123577 A JPS51123577 A JP S51123577A JP 50048189 A JP50048189 A JP 50048189A JP 4818975 A JP4818975 A JP 4818975A JP S51123577 A JPS51123577 A JP S51123577A
Authority
JP
Japan
Prior art keywords
vertica
typ
circuit including
integrating circuit
epitaxial base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50048189A
Other languages
Japanese (ja)
Inventor
Hajime Sawazaki
Hiroshi Mochizuki
Kazuo Sato
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP50048189A priority Critical patent/JPS51123577A/en
Priority to IT4911076A priority patent/IT1058177B/en
Priority to DE19762617521 priority patent/DE2617521A1/en
Priority to GB1630176A priority patent/GB1496306A/en
Priority to FR7611931A priority patent/FR2309040A1/en
Publication of JPS51123577A publication Critical patent/JPS51123577A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions

Abstract

PURPOSE: To provide the PNP and NPN transistors, featuring outstanding characteristics, on one chip with a high yield through the application of a relatively simple production process.
COPYRIGHT: (C)1976,JPO&Japio
JP50048189A 1975-04-22 1975-04-22 Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor Pending JPS51123577A (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP50048189A JPS51123577A (en) 1975-04-22 1975-04-22 Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor
IT4911076A IT1058177B (en) 1975-04-22 1976-04-21 INTEGRATED SEMICONDUCTOR CIRCUIT INCLUDING AN EPITAXIAL VERTICAL TRANSISTOR
DE19762617521 DE2617521A1 (en) 1975-04-22 1976-04-22 INTEGRATED SEMI-CONDUCTOR CIRCUIT
GB1630176A GB1496306A (en) 1975-04-22 1976-04-22 Semiconductor integrated circuit including an epitaxial base type vertical transistor
FR7611931A FR2309040A1 (en) 1975-04-22 1976-04-22 INTEGRATED CIRCUIT INCLUDING A VERTICAL TRANSISTOR WITH EPITAXIAL BASE

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50048189A JPS51123577A (en) 1975-04-22 1975-04-22 Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor

Publications (1)

Publication Number Publication Date
JPS51123577A true JPS51123577A (en) 1976-10-28

Family

ID=12796429

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50048189A Pending JPS51123577A (en) 1975-04-22 1975-04-22 Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor

Country Status (5)

Country Link
JP (1) JPS51123577A (en)
DE (1) DE2617521A1 (en)
FR (1) FR2309040A1 (en)
GB (1) GB1496306A (en)
IT (1) IT1058177B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917409A (en) * 1982-07-21 1984-01-28 Nissan Motor Co Ltd Conveying hanger
JPS6377144A (en) * 1986-09-19 1988-04-07 Sanyo Electric Co Ltd Semiconductor integrated circuit

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1101096B (en) * 1978-12-22 1985-09-28 Ates Componenti Elettron IMPROVEMENT OF THE PROCEDURE TO PRODUCE INTEGRATED SEMICONDUCTOR DEVICES AND RESULTING PRODUCT
JP2835116B2 (en) * 1989-09-29 1998-12-14 株式会社東芝 Power IC and method of manufacturing the same
JP3653963B2 (en) * 1997-12-25 2005-06-02 ソニー株式会社 Semiconductor device and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841675A (en) * 1971-09-28 1973-06-18

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4842685A (en) * 1971-09-30 1973-06-21
JPS5942463B2 (en) * 1972-09-22 1984-10-15 ソニー株式会社 Semiconductor integrated circuit device

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841675A (en) * 1971-09-28 1973-06-18

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5917409A (en) * 1982-07-21 1984-01-28 Nissan Motor Co Ltd Conveying hanger
JPS6377144A (en) * 1986-09-19 1988-04-07 Sanyo Electric Co Ltd Semiconductor integrated circuit

Also Published As

Publication number Publication date
FR2309040B1 (en) 1979-01-12
IT1058177B (en) 1982-04-10
GB1496306A (en) 1977-12-30
FR2309040A1 (en) 1976-11-19
DE2617521A1 (en) 1976-11-04

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