IT1101096B - IMPROVEMENT OF THE PROCEDURE TO PRODUCE INTEGRATED SEMICONDUCTOR DEVICES AND RESULTING PRODUCT - Google Patents

IMPROVEMENT OF THE PROCEDURE TO PRODUCE INTEGRATED SEMICONDUCTOR DEVICES AND RESULTING PRODUCT

Info

Publication number
IT1101096B
IT1101096B IT31304/78A IT3130478A IT1101096B IT 1101096 B IT1101096 B IT 1101096B IT 31304/78 A IT31304/78 A IT 31304/78A IT 3130478 A IT3130478 A IT 3130478A IT 1101096 B IT1101096 B IT 1101096B
Authority
IT
Italy
Prior art keywords
improvement
procedure
semiconductor devices
resulting product
integrated semiconductor
Prior art date
Application number
IT31304/78A
Other languages
Italian (it)
Other versions
IT7831304A0 (en
Inventor
Franco Bertotti
Mario Camagni
Mario Foroni
Brunello Sanasi
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT31304/78A priority Critical patent/IT1101096B/en
Publication of IT7831304A0 publication Critical patent/IT7831304A0/en
Priority to FR7929840A priority patent/FR2445022A1/en
Priority to SE7910530A priority patent/SE7910530L/en
Priority to JP16577079A priority patent/JPS55108762A/en
Priority to DE19792951821 priority patent/DE2951821A1/en
Priority to GB7944398A priority patent/GB2039415A/en
Application granted granted Critical
Publication of IT1101096B publication Critical patent/IT1101096B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors
IT31304/78A 1978-12-22 1978-12-22 IMPROVEMENT OF THE PROCEDURE TO PRODUCE INTEGRATED SEMICONDUCTOR DEVICES AND RESULTING PRODUCT IT1101096B (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
IT31304/78A IT1101096B (en) 1978-12-22 1978-12-22 IMPROVEMENT OF THE PROCEDURE TO PRODUCE INTEGRATED SEMICONDUCTOR DEVICES AND RESULTING PRODUCT
FR7929840A FR2445022A1 (en) 1978-12-22 1979-12-05 IMPROVEMENT RELATING TO THE PROCESS FOR THE PRODUCTION OF INTEGRATED SEMICONDUCTOR DEVICES AND THE PRODUCT THUS OBTAINED
SE7910530A SE7910530L (en) 1978-12-22 1979-12-20 SET TO MANUFACTURE INTEGRATED CIRCUITS
JP16577079A JPS55108762A (en) 1978-12-22 1979-12-21 Method of manufacturing integrated semiconductor device
DE19792951821 DE2951821A1 (en) 1978-12-22 1979-12-21 IMPROVED METHOD FOR PRODUCING INTEGRATED SEMICONDUCTOR DEVICES AND PRODUCT PRODUCED THEREFORE
GB7944398A GB2039415A (en) 1978-12-22 1979-12-24 A method for producing integrated semiconductor devices, and the resultant product

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT31304/78A IT1101096B (en) 1978-12-22 1978-12-22 IMPROVEMENT OF THE PROCEDURE TO PRODUCE INTEGRATED SEMICONDUCTOR DEVICES AND RESULTING PRODUCT

Publications (2)

Publication Number Publication Date
IT7831304A0 IT7831304A0 (en) 1978-12-22
IT1101096B true IT1101096B (en) 1985-09-28

Family

ID=11233426

Family Applications (1)

Application Number Title Priority Date Filing Date
IT31304/78A IT1101096B (en) 1978-12-22 1978-12-22 IMPROVEMENT OF THE PROCEDURE TO PRODUCE INTEGRATED SEMICONDUCTOR DEVICES AND RESULTING PRODUCT

Country Status (6)

Country Link
JP (1) JPS55108762A (en)
DE (1) DE2951821A1 (en)
FR (1) FR2445022A1 (en)
GB (1) GB2039415A (en)
IT (1) IT1101096B (en)
SE (1) SE7910530L (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0057549B1 (en) * 1981-01-29 1987-07-29 Kabushiki Kaisha Toshiba Semiconductor device
US4902633A (en) * 1988-05-09 1990-02-20 Motorola, Inc. Process for making a bipolar integrated circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123577A (en) * 1975-04-22 1976-10-28 Toshiba Corp Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor

Also Published As

Publication number Publication date
SE7910530L (en) 1980-06-23
DE2951821A1 (en) 1980-07-03
IT7831304A0 (en) 1978-12-22
GB2039415A (en) 1980-08-06
JPS55108762A (en) 1980-08-21
FR2445022A1 (en) 1980-07-18

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