JPS55108762A - Method of manufacturing integrated semiconductor device - Google Patents

Method of manufacturing integrated semiconductor device

Info

Publication number
JPS55108762A
JPS55108762A JP16577079A JP16577079A JPS55108762A JP S55108762 A JPS55108762 A JP S55108762A JP 16577079 A JP16577079 A JP 16577079A JP 16577079 A JP16577079 A JP 16577079A JP S55108762 A JPS55108762 A JP S55108762A
Authority
JP
Japan
Prior art keywords
semiconductor device
integrated semiconductor
manufacturing integrated
manufacturing
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16577079A
Other languages
Japanese (ja)
Inventor
Berutotsuchi Furanko
Kamaguni Mario
Fuorooni Mario
Sanashi Buruneruro
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of JPS55108762A publication Critical patent/JPS55108762A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821Collector regions of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Element Separation (AREA)
JP16577079A 1978-12-22 1979-12-21 Method of manufacturing integrated semiconductor device Pending JPS55108762A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT31304/78A IT1101096B (en) 1978-12-22 1978-12-22 IMPROVEMENT OF THE PROCEDURE TO PRODUCE INTEGRATED SEMICONDUCTOR DEVICES AND RESULTING PRODUCT

Publications (1)

Publication Number Publication Date
JPS55108762A true JPS55108762A (en) 1980-08-21

Family

ID=11233426

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16577079A Pending JPS55108762A (en) 1978-12-22 1979-12-21 Method of manufacturing integrated semiconductor device

Country Status (6)

Country Link
JP (1) JPS55108762A (en)
DE (1) DE2951821A1 (en)
FR (1) FR2445022A1 (en)
GB (1) GB2039415A (en)
IT (1) IT1101096B (en)
SE (1) SE7910530L (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3276888D1 (en) * 1981-01-29 1987-09-03 Toshiba Kk Semiconductor device
US4902633A (en) * 1988-05-09 1990-02-20 Motorola, Inc. Process for making a bipolar integrated circuit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51123577A (en) * 1975-04-22 1976-10-28 Toshiba Corp Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor

Also Published As

Publication number Publication date
FR2445022A1 (en) 1980-07-18
SE7910530L (en) 1980-06-23
IT1101096B (en) 1985-09-28
DE2951821A1 (en) 1980-07-03
IT7831304A0 (en) 1978-12-22
GB2039415A (en) 1980-08-06

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