IT1058177B - INTEGRATED SEMICONDUCTOR CIRCUIT INCLUDING AN EPITAXIAL VERTICAL TRANSISTOR - Google Patents

INTEGRATED SEMICONDUCTOR CIRCUIT INCLUDING AN EPITAXIAL VERTICAL TRANSISTOR

Info

Publication number
IT1058177B
IT1058177B IT4911076A IT4911076A IT1058177B IT 1058177 B IT1058177 B IT 1058177B IT 4911076 A IT4911076 A IT 4911076A IT 4911076 A IT4911076 A IT 4911076A IT 1058177 B IT1058177 B IT 1058177B
Authority
IT
Italy
Prior art keywords
circuit including
semiconductor circuit
integrated semiconductor
vertical transistor
epitaxial vertical
Prior art date
Application number
IT4911076A
Other languages
Italian (it)
Original Assignee
Tokyo Shibaura Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co filed Critical Tokyo Shibaura Electric Co
Application granted granted Critical
Publication of IT1058177B publication Critical patent/IT1058177B/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
IT4911076A 1975-04-22 1976-04-21 INTEGRATED SEMICONDUCTOR CIRCUIT INCLUDING AN EPITAXIAL VERTICAL TRANSISTOR IT1058177B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50048189A JPS51123577A (en) 1975-04-22 1975-04-22 Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor

Publications (1)

Publication Number Publication Date
IT1058177B true IT1058177B (en) 1982-04-10

Family

ID=12796429

Family Applications (1)

Application Number Title Priority Date Filing Date
IT4911076A IT1058177B (en) 1975-04-22 1976-04-21 INTEGRATED SEMICONDUCTOR CIRCUIT INCLUDING AN EPITAXIAL VERTICAL TRANSISTOR

Country Status (5)

Country Link
JP (1) JPS51123577A (en)
DE (1) DE2617521A1 (en)
FR (1) FR2309040A1 (en)
GB (1) GB1496306A (en)
IT (1) IT1058177B (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT1101096B (en) * 1978-12-22 1985-09-28 Ates Componenti Elettron IMPROVEMENT OF THE PROCEDURE TO PRODUCE INTEGRATED SEMICONDUCTOR DEVICES AND RESULTING PRODUCT
JPS5917409A (en) * 1982-07-21 1984-01-28 Nissan Motor Co Ltd Conveying hanger
JPS6377144A (en) * 1986-09-19 1988-04-07 Sanyo Electric Co Ltd Semiconductor integrated circuit
JP2835116B2 (en) * 1989-09-29 1998-12-14 株式会社東芝 Power IC and method of manufacturing the same
JP3653963B2 (en) * 1997-12-25 2005-06-02 ソニー株式会社 Semiconductor device and manufacturing method thereof

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841675A (en) * 1971-09-28 1973-06-18
JPS4842685A (en) * 1971-09-30 1973-06-21
JPS5942463B2 (en) * 1972-09-22 1984-10-15 ソニー株式会社 Semiconductor integrated circuit device

Also Published As

Publication number Publication date
DE2617521A1 (en) 1976-11-04
FR2309040B1 (en) 1979-01-12
JPS51123577A (en) 1976-10-28
GB1496306A (en) 1977-12-30
FR2309040A1 (en) 1976-11-19

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19950428