FR2309040A1 - Circuit integre comportant un transistor vertical a base epitaxiale - Google Patents
Circuit integre comportant un transistor vertical a base epitaxialeInfo
- Publication number
- FR2309040A1 FR2309040A1 FR7611931A FR7611931A FR2309040A1 FR 2309040 A1 FR2309040 A1 FR 2309040A1 FR 7611931 A FR7611931 A FR 7611931A FR 7611931 A FR7611931 A FR 7611931A FR 2309040 A1 FR2309040 A1 FR 2309040A1
- Authority
- FR
- France
- Prior art keywords
- integrated circuit
- circuit including
- vertical transistor
- epitaxial base
- epitaxial
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP50048189A JPS51123577A (en) | 1975-04-22 | 1975-04-22 | Semiconductor integrating circuit including epitaxial base typ vertica l directional transistor |
Publications (2)
Publication Number | Publication Date |
---|---|
FR2309040A1 true FR2309040A1 (fr) | 1976-11-19 |
FR2309040B1 FR2309040B1 (fr) | 1979-01-12 |
Family
ID=12796429
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
FR7611931A Granted FR2309040A1 (fr) | 1975-04-22 | 1976-04-22 | Circuit integre comportant un transistor vertical a base epitaxiale |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS51123577A (fr) |
DE (1) | DE2617521A1 (fr) |
FR (1) | FR2309040A1 (fr) |
GB (1) | GB1496306A (fr) |
IT (1) | IT1058177B (fr) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2445022A1 (fr) * | 1978-12-22 | 1980-07-18 | Ates Componenti Elettron | Perfectionnement relatif au procede pour la production de dispositifs integres a semi-conducteur et produit ainsi obtenu |
EP0420672A1 (fr) * | 1989-09-29 | 1991-04-03 | Kabushiki Kaisha Toshiba | Structure pour substrat semi-conducteur utilisée dans un dispositif IC à haute puissance |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5917409A (ja) * | 1982-07-21 | 1984-01-28 | Nissan Motor Co Ltd | 搬送用ハンガ− |
JPS6377144A (ja) * | 1986-09-19 | 1988-04-07 | Sanyo Electric Co Ltd | 半導体集積回路 |
JP3653963B2 (ja) * | 1997-12-25 | 2005-06-02 | ソニー株式会社 | 半導体装置およびその製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2154786A1 (fr) * | 1971-09-30 | 1973-05-11 | Sony Corp | |
FR2200635A1 (fr) * | 1972-09-22 | 1974-04-19 | Sony Corp |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS4841675A (fr) * | 1971-09-28 | 1973-06-18 |
-
1975
- 1975-04-22 JP JP50048189A patent/JPS51123577A/ja active Pending
-
1976
- 1976-04-21 IT IT4911076A patent/IT1058177B/it active
- 1976-04-22 FR FR7611931A patent/FR2309040A1/fr active Granted
- 1976-04-22 GB GB1630176A patent/GB1496306A/en not_active Expired
- 1976-04-22 DE DE19762617521 patent/DE2617521A1/de not_active Ceased
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2154786A1 (fr) * | 1971-09-30 | 1973-05-11 | Sony Corp | |
FR2200635A1 (fr) * | 1972-09-22 | 1974-04-19 | Sony Corp |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2445022A1 (fr) * | 1978-12-22 | 1980-07-18 | Ates Componenti Elettron | Perfectionnement relatif au procede pour la production de dispositifs integres a semi-conducteur et produit ainsi obtenu |
EP0420672A1 (fr) * | 1989-09-29 | 1991-04-03 | Kabushiki Kaisha Toshiba | Structure pour substrat semi-conducteur utilisée dans un dispositif IC à haute puissance |
US5159427A (en) * | 1989-09-29 | 1992-10-27 | Kabushiki Kaisha Toshiba | Semiconductor substrate structure for use in power ic device |
Also Published As
Publication number | Publication date |
---|---|
JPS51123577A (en) | 1976-10-28 |
GB1496306A (en) | 1977-12-30 |
IT1058177B (it) | 1982-04-10 |
DE2617521A1 (de) | 1976-11-04 |
FR2309040B1 (fr) | 1979-01-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
CD | Change of name or company name |