FR2352404A1 - Transistor a heterojonction - Google Patents

Transistor a heterojonction

Info

Publication number
FR2352404A1
FR2352404A1 FR7615223A FR7615223A FR2352404A1 FR 2352404 A1 FR2352404 A1 FR 2352404A1 FR 7615223 A FR7615223 A FR 7615223A FR 7615223 A FR7615223 A FR 7615223A FR 2352404 A1 FR2352404 A1 FR 2352404A1
Authority
FR
France
Prior art keywords
heterojunction transistor
heterojunction
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7615223A
Other languages
English (en)
Other versions
FR2352404B1 (fr
Inventor
Jacques Benoit
Yves Louis
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Alcatel Lucent SAS
Original Assignee
Compagnie Generale dElectricite SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Compagnie Generale dElectricite SA filed Critical Compagnie Generale dElectricite SA
Priority to FR7615223A priority Critical patent/FR2352404A1/fr
Priority to DE19772721744 priority patent/DE2721744A1/de
Priority to GB2017977A priority patent/GB1524339A/en
Publication of FR2352404A1 publication Critical patent/FR2352404A1/fr
Application granted granted Critical
Publication of FR2352404B1 publication Critical patent/FR2352404B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/737—Hetero-junction transistors
    • H01L29/7371—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3157—Partial encapsulation or coating
    • H01L23/3171—Partial encapsulation or coating the coating being directly applied to the semiconductor body, e.g. passivation layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/20—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds
    • H01L29/201—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys
    • H01L29/205—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIIBV compounds including two or more compounds, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
    • H01L29/267—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys in different semiconductor regions, e.g. heterojunctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/11—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor
    • H01L31/1105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by two potential barriers or surface barriers, e.g. bipolar phototransistor the device being a bipolar phototransistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
FR7615223A 1976-05-20 1976-05-20 Transistor a heterojonction Granted FR2352404A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
FR7615223A FR2352404A1 (fr) 1976-05-20 1976-05-20 Transistor a heterojonction
DE19772721744 DE2721744A1 (de) 1976-05-20 1977-05-13 Heterojonctions-transistor
GB2017977A GB1524339A (en) 1976-05-20 1977-05-13 Heterojunction transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7615223A FR2352404A1 (fr) 1976-05-20 1976-05-20 Transistor a heterojonction

Publications (2)

Publication Number Publication Date
FR2352404A1 true FR2352404A1 (fr) 1977-12-16
FR2352404B1 FR2352404B1 (fr) 1978-11-03

Family

ID=9173412

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7615223A Granted FR2352404A1 (fr) 1976-05-20 1976-05-20 Transistor a heterojonction

Country Status (3)

Country Link
DE (1) DE2721744A1 (fr)
FR (1) FR2352404A1 (fr)
GB (1) GB1524339A (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2477777A1 (fr) * 1980-03-10 1981-09-11 Nippon Telegraph & Telephone Transistor bipolaire de puissance
FR2490014A1 (fr) * 1980-09-11 1982-03-12 Scavennec Andre Phototransistor a heterojonction emetteur-base a couche d'emetteur localement de type inverse
EP0178004A1 (fr) * 1984-10-02 1986-04-16 IMEC Inter Universitair Micro-Electronica Centrum Transistor bipolaire à hétérojonction et procédé de fabrication
EP0501279A1 (fr) * 1991-02-28 1992-09-02 Texas Instruments Incorporated Transistors bipolaires à hétérojonction à micro-ondes appropriées pour des applications à faible puissance, à faible bruit et à haute puissance et procédé de fabrication
EP0525762A2 (fr) * 1991-07-31 1993-02-03 Texas Instruments Incorporated Transistors bipolaires hyperfréquence à hétérojonction utilisable en faible puissance, faible bruit et haute puissance et méthode pour leur fabrication

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2222304A (en) * 1987-07-01 1990-02-28 Plessey Co Plc Gallium arsenide device
US5455440A (en) * 1992-12-09 1995-10-03 Texas Instruments Incorporated Method to reduce emitter-base leakage current in bipolar transistors

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3897273A (en) * 1972-11-06 1975-07-29 Hughes Aircraft Co Process for forming electrically isolating high resistivity regions in GaAs

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2477777A1 (fr) * 1980-03-10 1981-09-11 Nippon Telegraph & Telephone Transistor bipolaire de puissance
FR2490014A1 (fr) * 1980-09-11 1982-03-12 Scavennec Andre Phototransistor a heterojonction emetteur-base a couche d'emetteur localement de type inverse
EP0178004A1 (fr) * 1984-10-02 1986-04-16 IMEC Inter Universitair Micro-Electronica Centrum Transistor bipolaire à hétérojonction et procédé de fabrication
US5108936A (en) * 1984-10-02 1992-04-28 Interuniveritair Micro Elektronica Centrum Method of producing a bipolar transistor having an amorphous emitter formed by plasma cvd
EP0501279A1 (fr) * 1991-02-28 1992-09-02 Texas Instruments Incorporated Transistors bipolaires à hétérojonction à micro-ondes appropriées pour des applications à faible puissance, à faible bruit et à haute puissance et procédé de fabrication
US5528060A (en) * 1991-02-28 1996-06-18 Texas Instruments Incorporated Microwave heterojunction bipolar transistors suitable for low-power, low-noise, and high-power applications
EP0525762A2 (fr) * 1991-07-31 1993-02-03 Texas Instruments Incorporated Transistors bipolaires hyperfréquence à hétérojonction utilisable en faible puissance, faible bruit et haute puissance et méthode pour leur fabrication
EP0525762A3 (en) * 1991-07-31 1994-06-29 Texas Instruments Inc Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same
US5446294A (en) * 1991-07-31 1995-08-29 Texas Instruments Incorporated Microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications and method for fabricating same
US5648278A (en) * 1991-07-31 1997-07-15 Texas Instruments Incorporated Method for fabricating microwave heterojunction bipolar transistors suitable for low-power, low-noise and high-power applications

Also Published As

Publication number Publication date
GB1524339A (en) 1978-09-13
DE2721744A1 (de) 1977-12-08
FR2352404B1 (fr) 1978-11-03

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