IT1032670B - Amplificatore a transistori - Google Patents

Amplificatore a transistori

Info

Publication number
IT1032670B
IT1032670B IT67954/75A IT6795475A IT1032670B IT 1032670 B IT1032670 B IT 1032670B IT 67954/75 A IT67954/75 A IT 67954/75A IT 6795475 A IT6795475 A IT 6795475A IT 1032670 B IT1032670 B IT 1032670B
Authority
IT
Italy
Prior art keywords
transistor amplifier
amplifier
transistor
Prior art date
Application number
IT67954/75A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1032670B publication Critical patent/IT1032670B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/0203—Particular design considerations for integrated circuits
    • H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302—Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68—Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics
IT67954/75A 1974-04-18 1975-04-15 Amplificatore a transistori IT1032670B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7405237A NL7405237A (nl) 1974-04-18 1974-04-18 Parallelschakelen van halfgeleidersystemen.

Publications (1)

Publication Number Publication Date
IT1032670B true IT1032670B (it) 1979-06-20

Family

ID=19821177

Family Applications (1)

Application Number Title Priority Date Filing Date
IT67954/75A IT1032670B (it) 1974-04-18 1975-04-15 Amplificatore a transistori

Country Status (10)

Country Link
US (1) US3952258A (it)
JP (1) JPS5821442B2 (it)
AT (1) AT347502B (it)
CA (1) CA1039368A (it)
DE (1) DE2514958C2 (it)
DK (1) DK161475A (it)
FR (1) FR2268330B1 (it)
GB (1) GB1467612A (it)
IT (1) IT1032670B (it)
NL (1) NL7405237A (it)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279843U (it) * 1975-12-12 1977-06-14
NL8204878A (nl) * 1982-12-17 1984-07-16 Philips Nv Halfgeleiderinrichting.
IT1213171B (it) * 1984-05-21 1989-12-14 Ates Componenti Elettron Transistore bipolare di potenza.
IT1215230B (it) * 1985-01-08 1990-01-31 Ates Componenti Elettron Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria
IT1198275B (it) * 1986-12-30 1988-12-21 Sgs Microelettronica Spa Transistore di potenza con miglioramento della resistenza alla rottura secondaria diretta
NL9002591A (nl) * 1990-11-28 1992-06-16 Philips Nv Versterkerschakeling met temperatuurcompensatie.
US6611172B1 (en) * 2001-06-25 2003-08-26 Sirenza Microdevices, Inc. Thermally distributed darlington amplifier
US10403621B2 (en) * 2014-10-29 2019-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit layout, layout method and system for implementing the method
CN107431463B (zh) * 2015-02-15 2021-02-02 天工方案公司 具有针对增强的耐热性的交错共射共基布局的功率放大器

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3667064A (en) * 1969-05-19 1972-05-30 Massachusetts Inst Technology Power semiconductor device with negative thermal feedback

Also Published As

Publication number Publication date
FR2268330B1 (it) 1979-07-27
DE2514958C2 (de) 1982-06-03
DE2514958A1 (de) 1975-10-30
AT347502B (de) 1978-12-27
NL7405237A (nl) 1975-10-21
DK161475A (it) 1975-10-19
FR2268330A1 (it) 1975-11-14
GB1467612A (en) 1977-03-16
CA1039368A (en) 1978-09-26
ATA285175A (de) 1978-05-15
JPS50140042A (it) 1975-11-10
JPS5821442B2 (ja) 1983-04-30
US3952258A (en) 1976-04-20
AU8013375A (en) 1976-10-21

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