AT347502B - Verstaerkerschaltungsanordnung mit wenigstens zwei endtransistoren - Google Patents

Verstaerkerschaltungsanordnung mit wenigstens zwei endtransistoren

Info

Publication number
AT347502B
AT347502B AT285175A AT285175A AT347502B AT 347502 B AT347502 B AT 347502B AT 285175 A AT285175 A AT 285175A AT 285175 A AT285175 A AT 285175A AT 347502 B AT347502 B AT 347502B
Authority
AT
Austria
Prior art keywords
amplifier circuit
circuit arrangement
end transistors
transistors
arrangement
Prior art date
Application number
AT285175A
Other languages
English (en)
Other versions
ATA285175A (de
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Publication of ATA285175A publication Critical patent/ATA285175A/de
Application granted granted Critical
Publication of AT347502B publication Critical patent/AT347502B/de

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/0203Particular design considerations for integrated circuits
    • H01L27/0207Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
    • H01L27/0211Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique adapted for requirements of temperature
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/30Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters
    • H03F1/302Modifications of amplifiers to reduce influence of variations of temperature or supply voltage or other physical parameters in bipolar transistor amplifiers
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/68Combinations of amplifiers, e.g. multi-channel amplifiers for stereophonics

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electronic Switches (AREA)
  • Bipolar Transistors (AREA)
AT285175A 1974-04-18 1975-04-15 Verstaerkerschaltungsanordnung mit wenigstens zwei endtransistoren AT347502B (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7405237A NL7405237A (nl) 1974-04-18 1974-04-18 Parallelschakelen van halfgeleidersystemen.

Publications (2)

Publication Number Publication Date
ATA285175A ATA285175A (de) 1978-05-15
AT347502B true AT347502B (de) 1978-12-27

Family

ID=19821177

Family Applications (1)

Application Number Title Priority Date Filing Date
AT285175A AT347502B (de) 1974-04-18 1975-04-15 Verstaerkerschaltungsanordnung mit wenigstens zwei endtransistoren

Country Status (10)

Country Link
US (1) US3952258A (de)
JP (1) JPS5821442B2 (de)
AT (1) AT347502B (de)
CA (1) CA1039368A (de)
DE (1) DE2514958C2 (de)
DK (1) DK161475A (de)
FR (1) FR2268330B1 (de)
GB (1) GB1467612A (de)
IT (1) IT1032670B (de)
NL (1) NL7405237A (de)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5279843U (de) * 1975-12-12 1977-06-14
NL8204878A (nl) * 1982-12-17 1984-07-16 Philips Nv Halfgeleiderinrichting.
IT1213171B (it) * 1984-05-21 1989-12-14 Ates Componenti Elettron Transistore bipolare di potenza.
IT1215230B (it) * 1985-01-08 1990-01-31 Ates Componenti Elettron Diretta. dispositivo a semiconduttore integrato con drastica riduzione dei fenomeni di rottura secondaria
IT1198275B (it) * 1986-12-30 1988-12-21 Sgs Microelettronica Spa Transistore di potenza con miglioramento della resistenza alla rottura secondaria diretta
NL9002591A (nl) * 1990-11-28 1992-06-16 Philips Nv Versterkerschakeling met temperatuurcompensatie.
US6611172B1 (en) * 2001-06-25 2003-08-26 Sirenza Microdevices, Inc. Thermally distributed darlington amplifier
US10403621B2 (en) * 2014-10-29 2019-09-03 Taiwan Semiconductor Manufacturing Company, Ltd. Circuit layout, layout method and system for implementing the method
KR102579277B1 (ko) * 2015-02-15 2023-09-14 스카이워크스 솔루션즈, 인코포레이티드 강화된 열적 견고성을 위해 스태거형 캐스코드 레이아웃을 갖는 전력 증폭기

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3667064A (en) * 1969-05-19 1972-05-30 Massachusetts Inst Technology Power semiconductor device with negative thermal feedback

Also Published As

Publication number Publication date
GB1467612A (en) 1977-03-16
DE2514958C2 (de) 1982-06-03
DK161475A (de) 1975-10-19
US3952258A (en) 1976-04-20
ATA285175A (de) 1978-05-15
JPS5821442B2 (ja) 1983-04-30
DE2514958A1 (de) 1975-10-30
AU8013375A (en) 1976-10-21
NL7405237A (nl) 1975-10-21
CA1039368A (en) 1978-09-26
JPS50140042A (de) 1975-11-10
FR2268330A1 (de) 1975-11-14
IT1032670B (it) 1979-06-20
FR2268330B1 (de) 1979-07-27

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Legal Events

Date Code Title Description
ELJ Ceased due to non-payment of the annual fee