IT1055371B - Procedimento di un transistore con funzionamento inverso - Google Patents
Procedimento di un transistore con funzionamento inversoInfo
- Publication number
- IT1055371B IT1055371B IT20352/76A IT2035276A IT1055371B IT 1055371 B IT1055371 B IT 1055371B IT 20352/76 A IT20352/76 A IT 20352/76A IT 2035276 A IT2035276 A IT 2035276A IT 1055371 B IT1055371 B IT 1055371B
- Authority
- IT
- Italy
- Prior art keywords
- transistor
- procedure
- reverse operation
- reverse
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
- H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/36—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the concentration or distribution of impurities in the bulk material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/73—Bipolar junction transistors
- H01L29/732—Vertical transistors
- H01L29/7327—Inverse vertical transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- High Energy & Nuclear Physics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Manufacturing & Machinery (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2507613A DE2507613C3 (de) | 1975-02-21 | 1975-02-21 | Verfahren zur Herstellung eines invers betriebenen Transistors |
Publications (1)
Publication Number | Publication Date |
---|---|
IT1055371B true IT1055371B (it) | 1981-12-21 |
Family
ID=5939504
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
IT20352/76A IT1055371B (it) | 1975-02-21 | 1976-02-20 | Procedimento di un transistore con funzionamento inverso |
Country Status (7)
Country | Link |
---|---|
US (1) | US4045251A (it) |
JP (1) | JPS6132825B2 (it) |
CA (1) | CA1061010A (it) |
DE (1) | DE2507613C3 (it) |
FR (1) | FR2301922A1 (it) |
GB (1) | GB1521526A (it) |
IT (1) | IT1055371B (it) |
Families Citing this family (19)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4178190A (en) * | 1975-06-30 | 1979-12-11 | Rca Corporation | Method of making a bipolar transistor with high-low emitter impurity concentration |
US4167425A (en) * | 1975-09-19 | 1979-09-11 | Siemens Aktiengesellschaft | Method for producing lateral bipolar transistor by ion-implantation and controlled temperature treatment |
DE2554426C3 (de) * | 1975-12-03 | 1979-06-21 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zur Erzeugung einer lokal hohen inversen Stromverstärkung bei einem Planartransistor sowie nach diesem Verfahren hergestellter invers betriebener Transistor |
JPS53118982A (en) * | 1977-03-28 | 1978-10-17 | Seiko Instr & Electronics Ltd | Electrostatic induction transistor logic element |
US4111720A (en) * | 1977-03-31 | 1978-09-05 | International Business Machines Corporation | Method for forming a non-epitaxial bipolar integrated circuit |
US4144098A (en) * | 1977-04-28 | 1979-03-13 | Hughes Aircraft Company | P+ Buried layer for I2 L isolation by ion implantation |
US4149906A (en) * | 1977-04-29 | 1979-04-17 | International Business Machines Corporation | Process for fabrication of merged transistor logic (MTL) cells |
CA1116309A (en) * | 1977-11-30 | 1982-01-12 | David L. Bergeron | Structure and process for optimizing the characteristics of i.sup.2l devices |
US4151009A (en) * | 1978-01-13 | 1979-04-24 | Bell Telephone Laboratories, Incorporated | Fabrication of high speed transistors by compensation implant near collector-base junction |
US4258379A (en) * | 1978-09-25 | 1981-03-24 | Hitachi, Ltd. | IIL With in and outdiffused emitter pocket |
DE2912535C2 (de) * | 1979-03-29 | 1983-04-07 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur Herstellung eines MIS-Feldeffekt-Transistors mit einstellbarer, extrem kurzer Kanallänge |
US4391651A (en) * | 1981-10-15 | 1983-07-05 | The United States Of America As Represented By The Secretary Of The Navy | Method of forming a hyperabrupt interface in a GaAs substrate |
US4507848A (en) * | 1982-11-22 | 1985-04-02 | Fairchild Camera & Instrument Corporation | Control of substrate injection in lateral bipolar transistors |
DE3618166A1 (de) * | 1986-05-30 | 1987-12-03 | Telefunken Electronic Gmbh | Lateraltransistor |
JPH01135068A (ja) * | 1987-11-20 | 1989-05-26 | Nec Corp | トランジスタ |
US5045911A (en) * | 1989-03-02 | 1991-09-03 | International Business Machines Corporation | Lateral PNP transistor and method for forming same |
US4996164A (en) * | 1989-03-02 | 1991-02-26 | International Business Machines Corporation | Method for forming lateral PNP transistor |
JP2626289B2 (ja) * | 1990-03-27 | 1997-07-02 | 松下電器産業株式会社 | 半導体装置の製造方法 |
CN112992664B (zh) * | 2021-02-26 | 2023-06-02 | 西安微电子技术研究所 | 一种基于离子注入的高厄利电压npn晶体管制备方法 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3383567A (en) * | 1965-09-15 | 1968-05-14 | Ion Physics Corp | Solid state translating device comprising irradiation implanted conductivity ions |
JPS4915377B1 (it) * | 1968-10-04 | 1974-04-15 | ||
JPS4833779A (it) * | 1971-09-02 | 1973-05-12 | ||
US3756862A (en) * | 1971-12-21 | 1973-09-04 | Ibm | Proton enhanced diffusion methods |
US3856578A (en) * | 1972-03-13 | 1974-12-24 | Bell Telephone Labor Inc | Bipolar transistors and method of manufacture |
JPS4924361A (it) * | 1972-06-27 | 1974-03-04 | ||
JPS4951879A (it) * | 1972-09-20 | 1974-05-20 | ||
JPS5415397B2 (it) * | 1974-12-27 | 1979-06-14 | ||
JPS5183481A (it) * | 1975-01-20 | 1976-07-22 | Tokyo Shibaura Electric Co |
-
1975
- 1975-02-21 DE DE2507613A patent/DE2507613C3/de not_active Expired
- 1975-10-31 GB GB45193/75A patent/GB1521526A/en not_active Expired
- 1975-12-23 CA CA242,413A patent/CA1061010A/en not_active Expired
-
1976
- 1976-02-02 US US05/654,616 patent/US4045251A/en not_active Expired - Lifetime
- 1976-02-12 FR FR7603863A patent/FR2301922A1/fr active Granted
- 1976-02-20 JP JP51017835A patent/JPS6132825B2/ja not_active Expired
- 1976-02-20 IT IT20352/76A patent/IT1055371B/it active
Also Published As
Publication number | Publication date |
---|---|
FR2301922A1 (fr) | 1976-09-17 |
DE2507613A1 (de) | 1976-09-02 |
CA1061010A (en) | 1979-08-21 |
FR2301922B1 (it) | 1982-04-23 |
GB1521526A (en) | 1978-08-16 |
DE2507613C3 (de) | 1979-07-05 |
DE2507613B2 (de) | 1978-10-19 |
US4045251A (en) | 1977-08-30 |
JPS51108785A (it) | 1976-09-27 |
JPS6132825B2 (it) | 1986-07-29 |
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