IT1055132B - Dispositivo semiconduttore a circuito intergrato - Google Patents

Dispositivo semiconduttore a circuito intergrato

Info

Publication number
IT1055132B
IT1055132B IT1995076A IT1995076A IT1055132B IT 1055132 B IT1055132 B IT 1055132B IT 1995076 A IT1995076 A IT 1995076A IT 1995076 A IT1995076 A IT 1995076A IT 1055132 B IT1055132 B IT 1055132B
Authority
IT
Italy
Prior art keywords
semiconductor device
integrated circuit
circuit semiconductor
integrated
semiconductor
Prior art date
Application number
IT1995076A
Other languages
English (en)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Application granted granted Critical
Publication of IT1055132B publication Critical patent/IT1055132B/it

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222Bipolar technology
    • H01L21/8228Complementary devices, e.g. complementary transistors
    • H01L21/82285Complementary vertical transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
IT1995076A 1975-02-08 1976-02-05 Dispositivo semiconduttore a circuito intergrato IT1055132B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50016561A JPS5914897B2 (ja) 1975-02-08 1975-02-08 半導体装置

Publications (1)

Publication Number Publication Date
IT1055132B true IT1055132B (it) 1981-12-21

Family

ID=11919681

Family Applications (1)

Application Number Title Priority Date Filing Date
IT1995076A IT1055132B (it) 1975-02-08 1976-02-05 Dispositivo semiconduttore a circuito intergrato

Country Status (8)

Country Link
JP (1) JPS5914897B2 (it)
CA (1) CA1048655A (it)
CH (1) CH607332A5 (it)
DE (1) DE2604735A1 (it)
FR (1) FR2300417A1 (it)
GB (1) GB1533156A (it)
IT (1) IT1055132B (it)
NL (1) NL7601307A (it)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126960A (en) * 1980-03-11 1981-10-05 Nec Corp Manufacture of semiconductor device
EP0093304B1 (en) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Semiconductor ic and method of making the same
JPS6062595U (ja) * 1983-10-04 1985-05-01 井上 八郎 地盤堀削用ビツトの切削用刃先
JPS61164399U (it) * 1985-03-30 1986-10-11
IT1218471B (it) * 1985-05-09 1990-04-19 Ates Componenti Elettron Circuito integrato bipolare comprendente transistori pnp verticali con collettore sul substrato
JPH053587Y2 (it) * 1986-11-19 1993-01-28
JPS6386192U (it) * 1986-11-19 1988-06-06
DE3883459T2 (de) * 1987-07-29 1994-03-17 Fairchild Semiconductor Verfahren zum Herstellen komplementärer kontaktloser vertikaler Bipolartransistoren.
JPH02296994A (ja) * 1989-05-09 1990-12-07 Fujita Corp 泥漿シールド機のカツターヘツド
JPH03128793U (it) * 1990-04-10 1991-12-25
JPH0450493U (it) * 1990-08-31 1992-04-28
FR3106931B1 (fr) 2020-01-30 2022-02-18 St Microelectronics Crolles 2 Sas Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147583B2 (it) * 1972-12-29 1976-12-15

Also Published As

Publication number Publication date
JPS5191680A (it) 1976-08-11
FR2300417A1 (fr) 1976-09-03
JPS5914897B2 (ja) 1984-04-06
FR2300417B1 (it) 1980-03-21
CH607332A5 (it) 1978-12-15
CA1048655A (en) 1979-02-13
GB1533156A (en) 1978-11-22
NL7601307A (nl) 1976-08-10
DE2604735A1 (de) 1976-08-19

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