FR3106931B1 - Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences - Google Patents

Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences Download PDF

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Publication number
FR3106931B1
FR3106931B1 FR2000903A FR2000903A FR3106931B1 FR 3106931 B1 FR3106931 B1 FR 3106931B1 FR 2000903 A FR2000903 A FR 2000903A FR 2000903 A FR2000903 A FR 2000903A FR 3106931 B1 FR3106931 B1 FR 3106931B1
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Prior art keywords
doped
bipolar transistor
formation
semiconductor layer
substrate
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FR2000903A
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English (en)
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FR3106931A1 (fr
Inventor
Martinez Jean Jimenez
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STMicroelectronics Crolles 2 SAS
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STMicroelectronics Crolles 2 SAS
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Priority to FR2000903A priority Critical patent/FR3106931B1/fr
Priority to US17/160,598 priority patent/US11538719B2/en
Priority to CN202120260881.6U priority patent/CN215600373U/zh
Priority to CN202110127097.2A priority patent/CN113206040A/zh
Publication of FR3106931A1 publication Critical patent/FR3106931A1/fr
Application granted granted Critical
Publication of FR3106931B1 publication Critical patent/FR3106931B1/fr
Priority to US17/992,602 priority patent/US11955481B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/73—Bipolar junction transistors
    • H01L29/732—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0821—Combination of lateral and vertical transistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0821—Collector regions of bipolar transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66272—Silicon vertical transistors

Abstract

Le présent texte concerne un procédé de fabrication d’un dispositif microélectronique comprenant un substrat semi-conducteur (1) dopé de type P et un transistor PNP et un transistor NPN agencés verticalement dans ledit substrat (1), ledit procédé comprenant les étapes successives suivantes :- formation d’un caisson d’isolation (2) dopé N+ du transistor PNP dans le substrat (1) ;- formation d’une région (3) dopée P+ dans le caisson d’isolation (2) ;- croissance épitaxiale d’une première couche semi-conductrice (10) sur le substrat (1) ;- formation d’un caisson (5) dopé N+ du transistor NPN, au moins une partie dudit caisson (5) s’étendant dans la première couche semi-conductrice (10) ;- croissance épitaxiale d’une seconde couche semi-conductrice (11) sur la première couche semi-conductrice (10) ;- formation d’une région (6) dopée P apte à former le collecteur du transistor PNP dans la seconde couche semi-conductrice (11), en liaison électrique avec la région (3) dopée P+ ;- formation d’une région (7) dopée N apte à former le collecteur du transistor NPN dans la seconde couche semi-conductrice (11), en liaison électrique avec le caisson (5) dopé N+. Figure pour l’abrégé : Fig 10
FR2000903A 2020-01-30 2020-01-30 Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences Active FR3106931B1 (fr)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR2000903A FR3106931B1 (fr) 2020-01-30 2020-01-30 Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences
US17/160,598 US11538719B2 (en) 2020-01-30 2021-01-28 Method for fabricating a device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications
CN202120260881.6U CN215600373U (zh) 2020-01-30 2021-01-29 微电子器件
CN202110127097.2A CN113206040A (zh) 2020-01-30 2021-01-29 制造包括pnp双极晶体管和npn双极晶体管的器件的方法
US17/992,602 US11955481B2 (en) 2020-01-30 2022-11-22 Device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR2000903A FR3106931B1 (fr) 2020-01-30 2020-01-30 Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences
FR2000903 2020-01-30

Publications (2)

Publication Number Publication Date
FR3106931A1 FR3106931A1 (fr) 2021-08-06
FR3106931B1 true FR3106931B1 (fr) 2022-02-18

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FR2000903A Active FR3106931B1 (fr) 2020-01-30 2020-01-30 Procédé de fabrication d’un dispositif comprenant un transistor bipolaire PNP et un transistor bipolaire NPN pour applications radiofréquences

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US (2) US11538719B2 (fr)
CN (2) CN113206040A (fr)
FR (1) FR3106931B1 (fr)

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5914897B2 (ja) 1975-02-08 1984-04-06 ソニー株式会社 半導体装置
US4357622A (en) * 1980-01-18 1982-11-02 International Business Machines Corporation Complementary transistor structure
US4969823A (en) * 1986-09-26 1990-11-13 Analog Devices, Incorporated Integrated circuit with complementary junction-isolated bipolar transistors and method of making same
US4939099A (en) * 1988-06-21 1990-07-03 Texas Instruments Incorporated Process for fabricating isolated vertical bipolar and JFET transistors
US5175607A (en) * 1990-04-26 1992-12-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
JP2748988B2 (ja) * 1991-03-13 1998-05-13 三菱電機株式会社 半導体装置とその製造方法
JPH0831841A (ja) * 1994-07-12 1996-02-02 Sony Corp 半導体装置及びその製造方法
FR2807567A1 (fr) * 2000-04-10 2001-10-12 St Microelectronics Sa Procede de realisation d'un transistor bipolaire
JP3976601B2 (ja) * 2002-03-28 2007-09-19 株式会社ルネサステクノロジ 半導体装置の製造方法
US6815801B2 (en) * 2003-02-28 2004-11-09 Texas Instrument Incorporated Vertical bipolar transistor and a method of manufacture therefor including two epitaxial layers and a buried layer

Also Published As

Publication number Publication date
US20210242087A1 (en) 2021-08-05
US11538719B2 (en) 2022-12-27
CN215600373U (zh) 2022-01-21
FR3106931A1 (fr) 2021-08-06
CN113206040A (zh) 2021-08-03
US20230090291A1 (en) 2023-03-23
US11955481B2 (en) 2024-04-09

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