DE3883459T2 - Verfahren zum Herstellen komplementärer kontaktloser vertikaler Bipolartransistoren. - Google Patents

Verfahren zum Herstellen komplementärer kontaktloser vertikaler Bipolartransistoren.

Info

Publication number
DE3883459T2
DE3883459T2 DE19883883459 DE3883459T DE3883459T2 DE 3883459 T2 DE3883459 T2 DE 3883459T2 DE 19883883459 DE19883883459 DE 19883883459 DE 3883459 T DE3883459 T DE 3883459T DE 3883459 T2 DE3883459 T2 DE 3883459T2
Authority
DE
Germany
Prior art keywords
bipolar transistors
vertical bipolar
manufacturing complementary
contactless vertical
complementary contactless
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
DE19883883459
Other languages
English (en)
Other versions
DE3883459D1 (de
Inventor
Madhukar B Vora
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fairchild Semiconductor Corp
Original Assignee
Fairchild Semiconductor Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fairchild Semiconductor Corp filed Critical Fairchild Semiconductor Corp
Publication of DE3883459D1 publication Critical patent/DE3883459D1/de
Application granted granted Critical
Publication of DE3883459T2 publication Critical patent/DE3883459T2/de
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE19883883459 1987-07-29 1988-07-26 Verfahren zum Herstellen komplementärer kontaktloser vertikaler Bipolartransistoren. Expired - Fee Related DE3883459T2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7962687A 1987-07-29 1987-07-29

Publications (2)

Publication Number Publication Date
DE3883459D1 DE3883459D1 (de) 1993-09-30
DE3883459T2 true DE3883459T2 (de) 1994-03-17

Family

ID=22151746

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19883883459 Expired - Fee Related DE3883459T2 (de) 1987-07-29 1988-07-26 Verfahren zum Herstellen komplementärer kontaktloser vertikaler Bipolartransistoren.

Country Status (4)

Country Link
EP (1) EP0301468B1 (de)
JP (1) JPH0715912B2 (de)
CA (1) CA1290466C (de)
DE (1) DE3883459T2 (de)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE4000351A1 (de) * 1990-01-08 1991-07-18 Siemens Ag Herstellverfahren fuer eine integrierte schaltungsanordnung mit zwei zueinander komplementaeren bipolartransistoren mit selbstjustiertem emitter-basis-komplex
US4997775A (en) * 1990-02-26 1991-03-05 Cook Robert K Method for forming a complementary bipolar transistor structure including a self-aligned vertical PNP transistor
GB2243486B (en) * 1990-04-26 1994-08-03 Mitsubishi Electric Corp Semiconductor device and manufacturing method thereof
US5175607A (en) * 1990-04-26 1992-12-29 Mitsubishi Denki Kabushiki Kaisha Semiconductor device and manufacturing method thereof
JP2825169B2 (ja) * 1990-09-17 1998-11-18 キヤノン株式会社 半導体装置
JP3748744B2 (ja) 1999-10-18 2006-02-22 Ｎｅｃエレクトロニクス株式会社 半導体装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3909318A (en) * 1971-04-14 1975-09-30 Philips Corp Method of forming complementary devices utilizing outdiffusion and selective oxidation
US4005453A (en) * 1971-04-14 1977-01-25 U.S. Philips Corporation Semiconductor device with isolated circuit elements and method of making
US4038680A (en) * 1972-12-29 1977-07-26 Sony Corporation Semiconductor integrated circuit device
JPS5914897B2 (ja) * 1975-02-08 1984-04-06 ソニー株式会社 半導体装置
US4159915A (en) * 1977-10-25 1979-07-03 International Business Machines Corporation Method for fabrication vertical NPN and PNP structures utilizing ion-implantation
JPS6185863A (ja) * 1984-10-03 1986-05-01 Nec Corp 半導体集積回路装置

Also Published As

Publication number Publication date
EP0301468A2 (de) 1989-02-01
EP0301468A3 (en) 1989-10-04
JPH01164067A (ja) 1989-06-28
DE3883459D1 (de) 1993-09-30
JPH0715912B2 (ja) 1995-02-22
EP0301468B1 (de) 1993-08-25
CA1290466C (en) 1991-10-08

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Legal Events

Date Code Title Description
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee