GB2243486B - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereofInfo
- Publication number
- GB2243486B GB2243486B GB9108434A GB9108434A GB2243486B GB 2243486 B GB2243486 B GB 2243486B GB 9108434 A GB9108434 A GB 9108434A GB 9108434 A GB9108434 A GB 9108434A GB 2243486 B GB2243486 B GB 2243486B
- Authority
- GB
- United Kingdom
- Prior art keywords
- manufacturing
- semiconductor device
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
- H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
- H01L27/0826—Combination of vertical complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11110290 | 1990-04-26 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9108434D0 GB9108434D0 (en) | 1991-06-05 |
| GB2243486A GB2243486A (en) | 1991-10-30 |
| GB2243486B true GB2243486B (en) | 1994-08-03 |
Family
ID=14552448
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9108434A Expired - Fee Related GB2243486B (en) | 1990-04-26 | 1991-04-19 | Semiconductor device and manufacturing method thereof |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP2660360B2 (en) |
| GB (1) | GB2243486B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5670394A (en) * | 1994-10-03 | 1997-09-23 | United Technologies Corporation | Method of making bipolar transistor having amorphous silicon contact as emitter diffusion source |
| US5641691A (en) * | 1995-04-03 | 1997-06-24 | The United States Of America As Represented By The Secretary Of The Navy | Method for fabricating complementary vertical bipolar junction transistors in silicon-on-sapphire |
| FR2807567A1 (en) * | 2000-04-10 | 2001-10-12 | St Microelectronics Sa | METHOD FOR PRODUCING A BIPOLAR TRANSISTOR |
| JP2003017577A (en) * | 2001-07-04 | 2003-01-17 | Denso Corp | Semiconductor device |
| JP3976601B2 (en) * | 2002-03-28 | 2007-09-19 | 株式会社ルネサステクノロジ | Manufacturing method of semiconductor device |
| GB0811391D0 (en) | 2008-06-23 | 2008-07-30 | Rolls Royce Plc | A rotor blade |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0301468A2 (en) * | 1987-07-29 | 1989-02-01 | Fairchild Semiconductor Corporation | Process for fabricating complementary contactless vertical bipolar transistors |
-
1991
- 1991-04-19 GB GB9108434A patent/GB2243486B/en not_active Expired - Fee Related
- 1991-04-23 JP JP3091893A patent/JP2660360B2/en not_active Expired - Lifetime
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0301468A2 (en) * | 1987-07-29 | 1989-02-01 | Fairchild Semiconductor Corporation | Process for fabricating complementary contactless vertical bipolar transistors |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9108434D0 (en) | 1991-06-05 |
| JPH04355958A (en) | 1992-12-09 |
| JP2660360B2 (en) | 1997-10-08 |
| GB2243486A (en) | 1991-10-30 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 746 | Register noted 'licences of right' (sect. 46/1977) |
Effective date: 19951107 |
|
| PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20070419 |