GB1533156A - Semiconductor integrated circuits - Google Patents

Semiconductor integrated circuits

Info

Publication number
GB1533156A
GB1533156A GB440076A GB440076A GB1533156A GB 1533156 A GB1533156 A GB 1533156A GB 440076 A GB440076 A GB 440076A GB 440076 A GB440076 A GB 440076A GB 1533156 A GB1533156 A GB 1533156A
Authority
GB
United Kingdom
Prior art keywords
region
type
layer
buried
epitaxial layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB440076A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1533156A publication Critical patent/GB1533156A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8222—Bipolar technology
    • H01L21/8228—Complementary devices, e.g. complementary transistors
    • H01L21/82285—Complementary vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

1533156 Integrated circuits SONY CORP 4 Feb 1976 [8 Feb 1975] 04400/76 Heading H1K An I.C. including complementary bipolar transistors comprises a P(N)type semiconductor substrate 21, a first, N(P)type buried layer 22 in the substrate 21, a second, P(N)type buried layer 25 partially surrounded by the first buried layer 22, a first N(P)type epitaxial layer 26 formed on the substrate, a second N(P)type epitaxial layer 30 formed on the first epitaxial layer 26, third and fourth P(N) type buried layers 28, 29 at the interface between the epitaxial layers 26, 30, a first, P(N)type region 32 formed from the surface of the second epitaxial layer 30 to reach the third buried layer 28 which together form the collector of one transistor, a second, N(P)type region 30A in the second epitaxial layer 30 and surrounded by the first region 32 and the third buried layer 28, a N(P)type diffusion region 34 in the second region 30A, a third P(N)type region 35 in the diffusion region 34 and forming the emitter of the one transistor, a fourth N(P) region 26B, 30B formed by the epitaxial layers 26, 30 and forming the collector of the complementary transistor, a fifth, P(N)type region 33 extending through the second epitaxial layer 30 to reach the fourth buried layer 29 and forming the base of the complementary transistor, a sixth, N(P)type region 37 surrounded by the fifth region 33 and the fourth buried layer 29 and forming the emitter of the complementary transistor, and a P(N)type isolation region 31 between the two transistors. The said complementary transistor has an emitter region of low conductivity and which includes a N<SP>+</SP>N potential barrier formed by adjacent regions 37, 38, which suppresses the injection of minority carriers from the base region 29 and hence increases the current gain. In other embodiments similar complementary transistors are formed in a triple epitaxial layer structure which may include a buried resistor region.
GB440076A 1975-02-08 1976-02-04 Semiconductor integrated circuits Expired GB1533156A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP50016561A JPS5914897B2 (en) 1975-02-08 1975-02-08 semiconductor equipment

Publications (1)

Publication Number Publication Date
GB1533156A true GB1533156A (en) 1978-11-22

Family

ID=11919681

Family Applications (1)

Application Number Title Priority Date Filing Date
GB440076A Expired GB1533156A (en) 1975-02-08 1976-02-04 Semiconductor integrated circuits

Country Status (8)

Country Link
JP (1) JPS5914897B2 (en)
CA (1) CA1048655A (en)
CH (1) CH607332A5 (en)
DE (1) DE2604735A1 (en)
FR (1) FR2300417A1 (en)
GB (1) GB1533156A (en)
IT (1) IT1055132B (en)
NL (1) NL7601307A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175138A (en) * 1985-05-09 1986-11-19 Sgs Microelettronica Spa Bipolar integrated circuits
US11538719B2 (en) 2020-01-30 2022-12-27 Stmicroelectronics (Crolles 2) Sas Method for fabricating a device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56126960A (en) * 1980-03-11 1981-10-05 Nec Corp Manufacture of semiconductor device
EP0093304B1 (en) * 1982-04-19 1986-01-15 Matsushita Electric Industrial Co., Ltd. Semiconductor ic and method of making the same
JPS6062595U (en) * 1983-10-04 1985-05-01 井上　八郎 Cutting edge of ground drilling bit
JPS61164399U (en) * 1985-03-30 1986-10-11
JPS6386192U (en) * 1986-11-19 1988-06-06
JPH053587Y2 (en) * 1986-11-19 1993-01-28
DE3883459T2 (en) * 1987-07-29 1994-03-17 Fairchild Semiconductor Method of manufacturing complementary contactless vertical bipolar transistors.
JPH02296994A (en) * 1989-05-09 1990-12-07 Fujita Corp Cutter head for slurry shield machine
JPH03128793U (en) * 1990-04-10 1991-12-25
JPH0450493U (en) * 1990-08-31 1992-04-28

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5147583B2 (en) * 1972-12-29 1976-12-15

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2175138A (en) * 1985-05-09 1986-11-19 Sgs Microelettronica Spa Bipolar integrated circuits
GB2175138B (en) * 1985-05-09 1989-04-19 Sgs Microelettronica Spa Bipolar integrated circuits
US11538719B2 (en) 2020-01-30 2022-12-27 Stmicroelectronics (Crolles 2) Sas Method for fabricating a device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications
US11955481B2 (en) 2020-01-30 2024-04-09 Stmicroelectronics (Crolles 2) Sas Device comprising a PNP bipolar transistor and NPN bipolar transistor for radiofrequency applications

Also Published As

Publication number Publication date
IT1055132B (en) 1981-12-21
JPS5191680A (en) 1976-08-11
FR2300417B1 (en) 1980-03-21
CH607332A5 (en) 1978-12-15
JPS5914897B2 (en) 1984-04-06
NL7601307A (en) 1976-08-10
FR2300417A1 (en) 1976-09-03
CA1048655A (en) 1979-02-13
DE2604735A1 (en) 1976-08-19

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19940204