GB1319037A - Transistors - Google Patents

Transistors

Info

Publication number
GB1319037A
GB1319037A GB1319037DA GB1319037A GB 1319037 A GB1319037 A GB 1319037A GB 1319037D A GB1319037D A GB 1319037DA GB 1319037 A GB1319037 A GB 1319037A
Authority
GB
United Kingdom
Prior art keywords
base
emitters
emitter
collector
junction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ferranti International PLC
Original Assignee
Ferranti PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ferranti PLC filed Critical Ferranti PLC
Publication of GB1319037A publication Critical patent/GB1319037A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0772—Vertical bipolar transistor in combination with resistors only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/0804—Emitter regions of bipolar transistors
    • H01L29/0813—Non-interconnected multi-emitter structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1004—Base region of bipolar transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Bipolar Transistors (AREA)

Abstract

1319037 Semi-conductor devices FERRANTI Ltd 24 March 1972 [26 March 1971] 8719/71 Heading H1K A multi-emitter NPN transistor 10 (Figs. 1, 2) having high inverse current gain value and forming part of an integrated circuit comprises a body with a P-type substrate 12 overlain by a shallow P-type epitaxial layer 13; a N+ layer 14 being buried at the interface and a N+ isolation barrier surrounding the transistor and extending to the buried layer. Two N+ emitters 16, 17 and a further feedback emitter 18 are diffused into the P-type epitaxial base 19 and the surface is covered with a SiO 2 layer (not shown). Contacts 20, 21, 22 are provided to the collector and the emitters 16, 17 with a contact 24 common to base 19 and further emitter 18 spanning the PN junction therebetween. Emitters 16, 17 lie within a first base region 25, and contact 24 and emitter 18 lie within a second region 26 of the base connected to 25 over resistor portion 27 defined between collector region 28 and a tongue 29 of the collector region extending between base regions 25, 26. The part of the collector-base PN junction adjacent emitters 16, 17 is biased off to reduce the number of charge carriers reinjected from the collector into the base region adjacent emitters 16, 17 and to reduce the inverse current leakage when the PN junction is forward biased and one of emitters 16, 17 is at high potential. Also the resistor base portion 27 reduces parasitic transistor leakage between emitters 16, 17, and the feedback emitter 18 reduces stored charge in the saturated condition and shortens the switching time. In a modification (Figs. 4, 5, not shown) the base resistor is interposed between the buried layer and the additional emitter encircling the base contact, which spans the PN junction and contacts the additional emitter.
GB1319037D 1971-03-26 1971-03-26 Transistors Expired GB1319037A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB871971 1971-03-26

Publications (1)

Publication Number Publication Date
GB1319037A true GB1319037A (en) 1973-05-31

Family

ID=9857925

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1319037D Expired GB1319037A (en) 1971-03-26 1971-03-26 Transistors

Country Status (1)

Country Link
GB (1) GB1319037A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2373880A1 (en) * 1976-12-13 1978-07-07 Siemens Ag INTERNAL FEEDBACK TRANSISTOR
FR2401524A1 (en) * 1977-07-08 1979-03-23 Ates Componenti Elettron POWER TRANSISTOR AND PROCESS FOR OBTAINING IT
GB2140204A (en) * 1983-05-16 1984-11-21 Ates Componenti Elettron Power transistor structure with ballast resistor
EP0308667A1 (en) * 1987-09-23 1989-03-29 Siemens Aktiengesellschaft Extraction electrode to lower the turn-off time of a semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2373880A1 (en) * 1976-12-13 1978-07-07 Siemens Ag INTERNAL FEEDBACK TRANSISTOR
FR2401524A1 (en) * 1977-07-08 1979-03-23 Ates Componenti Elettron POWER TRANSISTOR AND PROCESS FOR OBTAINING IT
GB2140204A (en) * 1983-05-16 1984-11-21 Ates Componenti Elettron Power transistor structure with ballast resistor
EP0308667A1 (en) * 1987-09-23 1989-03-29 Siemens Aktiengesellschaft Extraction electrode to lower the turn-off time of a semiconductor device

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Legal Events

Date Code Title Description
PS Patent sealed
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PE20 Patent expired after termination of 20 years