GB1514578A - Semiconductor devices - Google Patents

Semiconductor devices

Info

Publication number
GB1514578A
GB1514578A GB4249675A GB4249675A GB1514578A GB 1514578 A GB1514578 A GB 1514578A GB 4249675 A GB4249675 A GB 4249675A GB 4249675 A GB4249675 A GB 4249675A GB 1514578 A GB1514578 A GB 1514578A
Authority
GB
United Kingdom
Prior art keywords
emitter
region
oct
diffusion
minority carriers
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4249675A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB1514578A publication Critical patent/GB1514578A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826—Combination of vertical complementary transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083—Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839—Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)

Abstract

1514578 Semiconductor devices SONY CORP 16 Oct 1975 [31 Oct 1974] 42496/75 Heading H1K In a semiconductor device comprising a layered PNP or NPN emitter-base-collector structure with a further region of the opposite conductivity type to the emitter and forming a PN junction therewith, the emitter and further regions each have a thickness less than the diffusion length of the minority carriers therein, thus giving a low noise device with a high grounded emitter current gain. The typical NPN structure shown in Fig. 1, in which 14 is the further region, may be formed by conventional epitaxial deposition and diffusion steps. The doping of the emitter contact region 5 is so selected as to provide a potential barrier which reflects minority carriers injected into the emitter from the base. Suitable materials, doping concentrations and thicknesses for the various regions of the devices are specified. If the N + region is formed as a diffused region on a P type substrate the collector contact may be located on diffused region 6, and the island isolated, by a P type diffusion extending to the substrate, from similar islands in which conventional PNP transistors are formed.
GB4249675A 1974-10-31 1975-10-16 Semiconductor devices Expired GB1514578A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12586874A JPS5151286A (en) 1974-10-31 1974-10-31 HANDOTA ISOCHI

Publications (1)

Publication Number Publication Date
GB1514578A true GB1514578A (en) 1978-06-14

Family

ID=14920910

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4249675A Expired GB1514578A (en) 1974-10-31 1975-10-16 Semiconductor devices

Country Status (7)

Country Link
JP (1) JPS5151286A (en)
CA (1) CA1056068A (en)
DE (1) DE2547303A1 (en)
FR (1) FR2290039A1 (en)
GB (1) GB1514578A (en)
IT (1) IT1044307B (en)
NL (1) NL7512681A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116047256A (en) * 2023-03-24 2023-05-02 长鑫存储技术有限公司 Test method, test device and electronic equipment

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754969B2 (en) * 1974-04-04 1982-11-20
JPS5753672B2 (en) * 1974-04-10 1982-11-13
FR2413785A1 (en) * 1977-12-30 1979-07-27 Radiotechnique Compelec MONOLITHIC SEMICONDUCTOR DEVICE WITH MULTILAYER PLANE STRUCTURE, MESA TYPE, INCLUDING AT LEAST ONE TRANSISTOR ASSOCIATED WITH A SCHOTTKY DIODE
FR2462028A1 (en) * 1979-07-17 1981-02-06 Thomson Csf Thyristor for integrated circuits - with four concentric tray shaped zones
FR2543739B1 (en) * 1983-03-30 1986-04-18 Radiotechnique Compelec METHOD FOR PRODUCING A HIGH VOLTAGE BIPOLAR TRANSISTOR

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN116047256A (en) * 2023-03-24 2023-05-02 长鑫存储技术有限公司 Test method, test device and electronic equipment
CN116047256B (en) * 2023-03-24 2023-08-29 长鑫存储技术有限公司 Test method, test device and electronic equipment

Also Published As

Publication number Publication date
IT1044307B (en) 1980-03-20
DE2547303A1 (en) 1976-05-06
FR2290039B3 (en) 1979-09-14
NL7512681A (en) 1976-05-04
FR2290039A1 (en) 1976-05-28
JPS5724659B2 (en) 1982-05-25
CA1056068A (en) 1979-06-05
JPS5151286A (en) 1976-05-06

Similar Documents

Publication Publication Date Title
GB1524592A (en) Bipolar type semiconductor devices
GB1522958A (en) Fabrication of semiconductor devices
GB1507061A (en) Semiconductors
GB1314355A (en) Semiconductor device
GB1263127A (en) Integrated circuits
GB1301345A (en)
GB1483801A (en) Planar diffusion process for manufacturing monolithic integrated circuits
GB1444633A (en) Semiconductor integrated circuits
GB1169188A (en) Method of Manufacturing Semiconductor Devices
GB1073551A (en) Integrated circuit comprising a diode and method of making the same
GB1502165A (en) Semiconductor devices
GB1533156A (en) Semiconductor integrated circuits
GB1514578A (en) Semiconductor devices
GB1505103A (en) Semiconductor device having complementary transistors and method of manufacturing same
GB1455260A (en) Semiconductor devices
US4860077A (en) Vertical semiconductor device having a sidewall emitter
GB1194752A (en) Transistor
IE802394L (en) Bipolar type static memory cell
GB1244508A (en) Zener diode semiconductor devices
US3283223A (en) Transistor and method of fabrication to minimize surface recombination effects
GB1482298A (en) Monolithically integrated circuit
GB1523012A (en) Bipolar transistor with high-low emitter
US3826698A (en) Process for forming a pedestal base transistor
GB1446386A (en) Single bipolar transistor memory cell and methods of operation and fabrication
GB1127161A (en) Improvements in or relating to diffused base transistors

Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19941016