NL7512681A - SEMI-GUIDE DEVICE. - Google Patents

SEMI-GUIDE DEVICE.

Info

Publication number
NL7512681A
NL7512681A NL7512681A NL7512681A NL7512681A NL 7512681 A NL7512681 A NL 7512681A NL 7512681 A NL7512681 A NL 7512681A NL 7512681 A NL7512681 A NL 7512681A NL 7512681 A NL7512681 A NL 7512681A
Authority
NL
Netherlands
Prior art keywords
semi
guide device
guide
Prior art date
Application number
NL7512681A
Other languages
Dutch (nl)
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of NL7512681A publication Critical patent/NL7512681A/en

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70Bipolar devices
    • H01L29/74Thyristor-type devices, e.g. having four-zone regenerative action
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/761PN junctions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761Vertical bipolar transistor in combination with diodes only
    • H01L27/0766Vertical bipolar transistor in combination with diodes only with Schottky diodes only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0826Combination of vertical complementary transistors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/08Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/083Anode or cathode regions of thyristors or gated bipolar-mode devices
    • H01L29/0839Cathode regions of thyristors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Transistors (AREA)
NL7512681A 1974-10-31 1975-10-29 SEMI-GUIDE DEVICE. NL7512681A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP12586874A JPS5151286A (en) 1974-10-31 1974-10-31 HANDOTA ISOCHI

Publications (1)

Publication Number Publication Date
NL7512681A true NL7512681A (en) 1976-05-04

Family

ID=14920910

Family Applications (1)

Application Number Title Priority Date Filing Date
NL7512681A NL7512681A (en) 1974-10-31 1975-10-29 SEMI-GUIDE DEVICE.

Country Status (7)

Country Link
JP (1) JPS5151286A (en)
CA (1) CA1056068A (en)
DE (1) DE2547303A1 (en)
FR (1) FR2290039A1 (en)
GB (1) GB1514578A (en)
IT (1) IT1044307B (en)
NL (1) NL7512681A (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5754969B2 (en) * 1974-04-04 1982-11-20
JPS5753672B2 (en) * 1974-04-10 1982-11-13
FR2413785A1 (en) * 1977-12-30 1979-07-27 Radiotechnique Compelec MONOLITHIC SEMICONDUCTOR DEVICE WITH MULTILAYER PLANE STRUCTURE, MESA TYPE, INCLUDING AT LEAST ONE TRANSISTOR ASSOCIATED WITH A SCHOTTKY DIODE
FR2462028A1 (en) * 1979-07-17 1981-02-06 Thomson Csf Thyristor for integrated circuits - with four concentric tray shaped zones
FR2543739B1 (en) * 1983-03-30 1986-04-18 Radiotechnique Compelec METHOD FOR PRODUCING A HIGH VOLTAGE BIPOLAR TRANSISTOR
CN116047256B (en) * 2023-03-24 2023-08-29 长鑫存储技术有限公司 Test method, test device and electronic equipment

Also Published As

Publication number Publication date
IT1044307B (en) 1980-03-20
GB1514578A (en) 1978-06-14
DE2547303A1 (en) 1976-05-06
FR2290039B3 (en) 1979-09-14
FR2290039A1 (en) 1976-05-28
JPS5724659B2 (en) 1982-05-25
CA1056068A (en) 1979-06-05
JPS5151286A (en) 1976-05-06

Similar Documents

Publication Publication Date Title
NL7513758A (en) AKOUSTO-OPTICAL DEVICE.
NL7511906A (en) SEMI-GUIDE DEVICE.
NL7503870A (en) SEMI-GUIDE DEVICE.
NL7507198A (en) TIRE-LEI DEVICE.
NL7509859A (en) SEMI-GUIDE DEVICE.
NL7515076A (en) SEMI-GUIDE DEVICE.
NL7409766A (en) ESCAPE DEVICE.
NL7512559A (en) SEMI-GUIDE DEVICE.
SE7500031L (en) CALCULATING VAGAN DEVICE.
NL7506450A (en) SEMI-GUIDE DEVICE.
NL7401939A (en) LOAD-CONNECTED DEVICE.
NO148682C (en) ROERSTOETTE.
NL7409067A (en) STOP DEVICE.
NL7503556A (en) ENCEPHALOGRAPHER.
NL7506043A (en) COUNTER DEVICE.
NL7507015A (en) SEMI-GUIDE DEVICE.
NL156659B (en) FASTENING DEVICE.
NL7510856A (en) PIPELINE-STAND-CONTROL DEVICE.
NL7509804A (en) SEMI-GUIDE DEVICE.
NL7504673A (en) SEMI-GUIDE DEVICE.
NL7507348A (en) FIXING DEVICE.
NL7413207A (en) SEMI-GUIDE DEVICE.
NL7503713A (en) CONFIGURATION DEVICE.
SE7407073L (en) DEVICE FOR TAMPONES.
NL7511742A (en) SEMI-GUIDE DEVICE.

Legal Events

Date Code Title Description
BV The patent application has lapsed