FR2413785A1 - MONOLITHIC SEMICONDUCTOR DEVICE WITH MULTILAYER PLANE STRUCTURE, MESA TYPE, INCLUDING AT LEAST ONE TRANSISTOR ASSOCIATED WITH A SCHOTTKY DIODE - Google Patents

MONOLITHIC SEMICONDUCTOR DEVICE WITH MULTILAYER PLANE STRUCTURE, MESA TYPE, INCLUDING AT LEAST ONE TRANSISTOR ASSOCIATED WITH A SCHOTTKY DIODE

Info

Publication number
FR2413785A1
FR2413785A1 FR7739796A FR7739796A FR2413785A1 FR 2413785 A1 FR2413785 A1 FR 2413785A1 FR 7739796 A FR7739796 A FR 7739796A FR 7739796 A FR7739796 A FR 7739796A FR 2413785 A1 FR2413785 A1 FR 2413785A1
Authority
FR
France
Prior art keywords
schottky diode
semiconductor device
plane structure
monolithic semiconductor
mesa type
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7739796A
Other languages
French (fr)
Other versions
FR2413785B1 (en
Inventor
Bernard Roger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Radiotechnique Compelec RTC SA
Original Assignee
Radiotechnique Compelec RTC SA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Radiotechnique Compelec RTC SA filed Critical Radiotechnique Compelec RTC SA
Priority to FR7739796A priority Critical patent/FR2413785A1/en
Priority to DE19782854995 priority patent/DE2854995C2/en
Priority to GB7849491A priority patent/GB2011713B/en
Priority to CA318,356A priority patent/CA1123922A/en
Priority to JP16133978A priority patent/JPS54100673A/en
Publication of FR2413785A1 publication Critical patent/FR2413785A1/en
Application granted granted Critical
Publication of FR2413785B1 publication Critical patent/FR2413785B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
    • H01L27/0823—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only including vertical bipolar transistors only
    • H01L27/0825—Combination of vertical direct transistors of the same conductivity type having different characteristics,(e.g. Darlington transistors)
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/0688—Integrated circuits having a three-dimensional layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
    • H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
    • H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
    • H01L27/075—Bipolar transistors in combination with diodes, or capacitors, or resistors, e.g. lateral bipolar transistor, and vertical bipolar transistor and resistor
    • H01L27/0755—Vertical bipolar transistor in combination with diodes, or capacitors, or resistors
    • H01L27/0761—Vertical bipolar transistor in combination with diodes only
    • H01L27/0766—Vertical bipolar transistor in combination with diodes only with Schottky diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

DISPOSITIF COMPORTANT UNE DIODE SCHOTTKY DISPOSEE EN PARALLELE SUR LA JONCTION EMETTEUR-BASE D'UN TRANSISTOR TRIEPITAXIAL. LA DIODE SCHOTTKY EST SITUEE EN SURFACE DU LIT EPITAXIAL DONT UNE PORTION FORME, PAR AILLEURS, LA REGION EPITAXIALE D'EMETTEUR DU TRANSISTOR. APPLICATION NOTAMMENT A L'AMELIORATION DE LA VITESSE DE COMMUTATION DANS UN AMPLIFICATEUR DARLINGTON.DEVICE INCLUDING A SCHOTTKY DIODE ARRANGED IN PARALLEL ON THE TRANSMITTER-BASE JUNCTION OF A TRIEPITAXIAL TRANSISTOR. THE SCHOTTKY DIODE IS LOCATED ON THE SURFACE OF THE EPITAXIAL BED OF WHICH A PORTION ALSO SHAPES THE EPITAXIAL REGION OF TRANSISTOR EMITTER. APPLICATION IN PARTICULAR TO THE IMPROVEMENT OF THE SWITCHING SPEED IN A DARLINGTON AMPLIFIER.

FR7739796A 1977-12-30 1977-12-30 MONOLITHIC SEMICONDUCTOR DEVICE WITH MULTILAYER PLANE STRUCTURE, MESA TYPE, INCLUDING AT LEAST ONE TRANSISTOR ASSOCIATED WITH A SCHOTTKY DIODE Granted FR2413785A1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
FR7739796A FR2413785A1 (en) 1977-12-30 1977-12-30 MONOLITHIC SEMICONDUCTOR DEVICE WITH MULTILAYER PLANE STRUCTURE, MESA TYPE, INCLUDING AT LEAST ONE TRANSISTOR ASSOCIATED WITH A SCHOTTKY DIODE
DE19782854995 DE2854995C2 (en) 1977-12-30 1978-12-20 Integrated Darlington circuit arrangement
GB7849491A GB2011713B (en) 1977-12-30 1978-12-21 Integrated darlington circuit
CA318,356A CA1123922A (en) 1977-12-30 1978-12-21 Integrated darlington circuit comprising at least one transistor associated with a schottky-diode
JP16133978A JPS54100673A (en) 1977-12-30 1978-12-28 Integrated darlington circuit

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7739796A FR2413785A1 (en) 1977-12-30 1977-12-30 MONOLITHIC SEMICONDUCTOR DEVICE WITH MULTILAYER PLANE STRUCTURE, MESA TYPE, INCLUDING AT LEAST ONE TRANSISTOR ASSOCIATED WITH A SCHOTTKY DIODE

Publications (2)

Publication Number Publication Date
FR2413785A1 true FR2413785A1 (en) 1979-07-27
FR2413785B1 FR2413785B1 (en) 1982-11-12

Family

ID=9199556

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7739796A Granted FR2413785A1 (en) 1977-12-30 1977-12-30 MONOLITHIC SEMICONDUCTOR DEVICE WITH MULTILAYER PLANE STRUCTURE, MESA TYPE, INCLUDING AT LEAST ONE TRANSISTOR ASSOCIATED WITH A SCHOTTKY DIODE

Country Status (5)

Country Link
JP (1) JPS54100673A (en)
CA (1) CA1123922A (en)
DE (1) DE2854995C2 (en)
FR (1) FR2413785A1 (en)
GB (1) GB2011713B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308957A (en) * 1987-06-11 1988-12-16 Sanyo Electric Co Ltd Darlington transistor
JP3549479B2 (en) * 2000-10-16 2004-08-04 寛治 大塚 Semiconductor integrated circuit with varactor device

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2290039A1 (en) * 1974-10-31 1976-05-28 Sony Corp SEMICONDUCTOR COMPONENT

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch
FR2335957A1 (en) * 1975-12-17 1977-07-15 Radiotechnique Compelec Multilayer epitaxial monolithic rectifier bridge - includes Darlington pair formed on same silicon substrate

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2290039A1 (en) * 1974-10-31 1976-05-28 Sony Corp SEMICONDUCTOR COMPONENT

Also Published As

Publication number Publication date
JPS6136714B2 (en) 1986-08-20
GB2011713B (en) 1982-04-28
DE2854995A1 (en) 1979-07-05
GB2011713A (en) 1979-07-11
CA1123922A (en) 1982-05-18
FR2413785B1 (en) 1982-11-12
JPS54100673A (en) 1979-08-08
DE2854995C2 (en) 1985-06-20

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