JPS6454761A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS6454761A
JPS6454761A JP21012587A JP21012587A JPS6454761A JP S6454761 A JPS6454761 A JP S6454761A JP 21012587 A JP21012587 A JP 21012587A JP 21012587 A JP21012587 A JP 21012587A JP S6454761 A JPS6454761 A JP S6454761A
Authority
JP
Japan
Prior art keywords
diode
pattern
area
increasing
reduce
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP21012587A
Other languages
Japanese (ja)
Inventor
Keiichi Yoshizumi
Mitsuhiro Yamada
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Microcomputer System Ltd
Hitachi Ltd
Original Assignee
Hitachi Ltd
Hitachi Microcomputer Engineering Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd, Hitachi Microcomputer Engineering Ltd filed Critical Hitachi Ltd
Priority to JP21012587A priority Critical patent/JPS6454761A/en
Publication of JPS6454761A publication Critical patent/JPS6454761A/en
Pending legal-status Critical Current

Links

Landscapes

  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE:To increase the peripheral length of a Schottky barrier diode without increasing the area of the diode by forming the pattern of a guard ring region in a predetermined form in a semiconductor formed with the diode on a semiconductor substrate. CONSTITUTION:A guard ring 6 on the periphery of a Schottky barrier diode 5 of an n<+> type diffused layer on a semiconductor substrate is formed in a mesh-like pattern. The peripheral length of the diode 5 is substantially increased without increasing the area of the diode 5 by this pattern to reduce its forward voltage to increase a current at the time of operation, thereby stabilizing an operating potential to reduce its area and to enhance its performance.
JP21012587A 1987-08-26 1987-08-26 Semiconductor device Pending JPS6454761A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP21012587A JPS6454761A (en) 1987-08-26 1987-08-26 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP21012587A JPS6454761A (en) 1987-08-26 1987-08-26 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS6454761A true JPS6454761A (en) 1989-03-02

Family

ID=16584209

Family Applications (1)

Application Number Title Priority Date Filing Date
JP21012587A Pending JPS6454761A (en) 1987-08-26 1987-08-26 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS6454761A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006295062A (en) * 2005-04-14 2006-10-26 Rohm Co Ltd Semiconductor device

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006295062A (en) * 2005-04-14 2006-10-26 Rohm Co Ltd Semiconductor device
WO2006112291A1 (en) * 2005-04-14 2006-10-26 Rohm Co., Ltd. Semiconductor device
US7535075B2 (en) 2005-04-14 2009-05-19 Rohm Co., Ltd. Semiconductor device

Similar Documents

Publication Publication Date Title
JPS6454761A (en) Semiconductor device
GB1366845A (en) Integrated thyristor semiconductor arrangements
JPS5691477A (en) Semiconductor
JPS57173974A (en) Semiconductor device
JPS5593262A (en) Semiconductor device
JPS52133761A (en) Integrated circuit
JPS5457973A (en) Semiconductor device for switching control
JPS6442858A (en) Metal semiconductor junction diode and manufacture thereof
JPS556847A (en) Semiconductor device
JPS57128960A (en) Semiconductor device
JPS5617067A (en) Semiconductor switch
JPS5563879A (en) Semiconductor device
JPS5457974A (en) Thyristor with amplifying gate
JPS54141578A (en) Semiconductor device
JPS5423375A (en) Manufacture of schottky barrier type electrode
JPS5421286A (en) Reverse conductor thyristor
JPS55150278A (en) Diode
JPS5516541A (en) Reverse-conducting gate turn-off thyristor circuit
GB964431A (en) Improvements in or relating to transistors
JPS5538080A (en) Semiconductor device
JPS6459873A (en) Semiconductor device
JPS5681970A (en) Semiconductor switching device
JPS5612779A (en) Zener diode
JPH01218066A (en) Semiconductor device
JPS5676582A (en) Semiconductor device