JPH01218066A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPH01218066A JPH01218066A JP4499888A JP4499888A JPH01218066A JP H01218066 A JPH01218066 A JP H01218066A JP 4499888 A JP4499888 A JP 4499888A JP 4499888 A JP4499888 A JP 4499888A JP H01218066 A JPH01218066 A JP H01218066A
- Authority
- JP
- Japan
- Prior art keywords
- type
- region
- diode
- semiconductor region
- electrode
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims description 38
- 239000000758 substrate Substances 0.000 claims abstract description 11
- 239000012535 impurity Substances 0.000 abstract description 6
- 230000002093 peripheral effect Effects 0.000 abstract description 5
- 238000010586 diagram Methods 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 3
- 230000010355 oscillation Effects 0.000 description 3
- 239000000969 carrier Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/87—Thyristor diodes, e.g. Shockley diodes, break-over diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/74—Thyristor-type devices, e.g. having four-zone regenerative action
- H01L29/7404—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device
- H01L29/7412—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode
- H01L29/7416—Thyristor-type devices, e.g. having four-zone regenerative action structurally associated with at least one other device the device being a diode the device being an antiparallel diode, e.g. RCT
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分野〕
本発明は、半導体装置に関し、特に着火回路用途に改良
されたプレーナ型ショックレーダイオードの構造に関す
る。DETAILED DESCRIPTION OF THE INVENTION [Field of Industrial Application] The present invention relates to a semiconductor device, and particularly to the structure of a planar Shockley diode that is improved for use in an ignition circuit.
従来のプレーナ形逆阻止ショックレーダイオードの断面
図を第４図に示す。Ｎ形基板（サブストレート）３にＰ
形不純物を拡散して基板表面より裏面に達する突き抜は
領域を有するＰ形アノード領域４を形成し、更にＰ形ベ
ース領域２．Ｎ形カソード領域１を形成する。カソード
側を負、７ノード側を正として破壊（ブレークオーバー
）電圧ＶＢＯ以上の電圧をかけると、自己トリガしてオ
ンする。A cross-sectional view of a conventional planar reverse blocking Shockley diode is shown in FIG. P to N type board (substrate) 3
The punch-through which diffuses type impurities and reaches the back surface from the front surface of the substrate forms a P-type anode region 4 having a region, and further has a P-type base region 2. An N-type cathode region 1 is formed. When a voltage higher than the breakdown voltage VBO is applied with the cathode side being negative and the 7th node side being positive, it self-trigger and turn on.
ショックレーダイオードの主な用途は着火用素子として
利用することである。第５図に着火回路の−例を示す。The primary use of Shockley diodes is as ignition elements. FIG. 5 shows an example of an ignition circuit.
スイッチ１５を閉じるとコンデンサ１３が充電されてゆ
き、充電電圧がショックレーダイオード１１のＶＢＯに
達するとショックレーダイオード１１がオンし、昇圧ト
ランス１４に放電電流が流れる。コンデンサ１３と昇圧
トランス１４がＬＣ発振回路を形成しており、逆電流が
外付はダイオード１２を通して流れることにより、第６
図に示す様な発振電流が昇圧トランス１４に流れる。When the switch 15 is closed, the capacitor 13 is charged, and when the charging voltage reaches the VBO of the Shockley diode 11, the Shockley diode 11 is turned on and a discharge current flows through the step-up transformer 14. The capacitor 13 and the step-up transformer 14 form an LC oscillation circuit, and the reverse current flows through the external diode 12, so that the sixth
An oscillating current as shown in the figure flows through the step-up transformer 14.
この様な回路を形成する場合、必ず外付はダイオード１
２を併設しなければならない。また、ショックレーダイ
オード１１のターンオフ時間が短いと、逆電流が外付は
ダイオード１２を通して流れている間ショックレーダイ
オード１１がオフしてしまい、第７図に示す様に発振電
流が途切れてしまい、十分な着火エネルギーが得られな
いという欠点がある。When forming such a circuit, be sure to use diode 1 externally.
2 must be installed together. Furthermore, if the turn-off time of the Shockley diode 11 is short, the Shockley diode 11 will be turned off while the reverse current is flowing through the external diode 12, and the oscillation current will be interrupted as shown in FIG. The disadvantage is that sufficient ignition energy cannot be obtained.
本発明によれば、一導電型の半導体基板と、該半導体基
板の一主面に設けられた他の導電型の第１の半導体領域
と、該第１の半導体領域と接続して設けられた第１の電
極と、前記一主面に前記第１の半導体領域と離間して設
けられ前記第１の電極とオーミック接続される第２の半
導体領域と、前記半導体基板の前記一主面とは反対側の
他の主面に前記第１の半導体領域と対向して設けられた
前記他の導電型の第３の半導体領域と、該第３の半導体
領域内に設けられた前記一導電型の第４の半導体領域と
、前記他の主面に前記第２の半導体領域と対向して設け
られた前記他の導電型の第５の半導体領域と、前記第４
の半導体領域と前記第５の半導体領域に共通して接続さ
れる第２の電極とを有するショックレーダイオードが得
られる。According to the present invention, a semiconductor substrate of one conductivity type, a first semiconductor region of another conductivity type provided on one main surface of the semiconductor substrate, and a semiconductor region provided in connection with the first semiconductor region. A first electrode, a second semiconductor region provided on the one main surface apart from the first semiconductor region and ohmically connected to the first electrode, and the one main surface of the semiconductor substrate. a third semiconductor region of the other conductivity type provided opposite the first semiconductor region on the other main surface on the opposite side; and a third semiconductor region of the one conductivity type provided within the third semiconductor region. a fourth semiconductor region; a fifth semiconductor region of the other conductivity type provided on the other main surface facing the second semiconductor region;
A Shockley diode having a semiconductor region and a second electrode commonly connected to the fifth semiconductor region is obtained.
本発明のショックレーダイオードでは、外付はダイオー
ドを併設しなくても、着火回路用素子として使用するこ
とができる。また、波形が途切れて十分な着火エネルギ
ーが得られないということも非常に起りにくい。The Shockley diode of the present invention can be used as an ignition circuit element without an external diode. Furthermore, it is very unlikely that the waveform will be interrupted and sufficient ignition energy will not be obtained.
第１図は、本発明の一実施例の縦断面図である。 FIG. 1 is a longitudinal sectional view of an embodiment of the present invention.
Ｎ形基板（サブストレート）３の裏面にＰ形アノード領
域４を形成する際、同時に表面側に独立した２層５を外
周部に形成する。次に、Ｐ形ベース領域２を２層５の内
側に形成する。更にＮ形カソード領域１を形成する際に
裏面の外周部にもＮ形不純物を拡散して、Ｎ＋形領領域
６形成し、この部分のＮ形不純物濃度を上げて裏面電極
のオーミック性を良くする。最後にカソード電極９およ
びアノード電極１０を形成する。When forming the P-type anode region 4 on the back surface of the N-type substrate 3, two independent layers 5 are simultaneously formed on the front surface side at the outer periphery. Next, a P-type base region 2 is formed inside the two layers 5. Furthermore, when forming the N-type cathode region 1, N-type impurities are also diffused into the outer periphery of the back surface to form an N+ type region 6, and the N-type impurity concentration in this portion is increased to improve the ohmic properties of the back electrode. do. Finally, a cathode electrode 9 and an anode electrode 10 are formed.
この様に形成されたショックレーダイオードは、外周部
が、逆導通のダイオードとなっている。これを着火回路
用素子として使用した回路例を第３図に示す。逆導通ダ
イオードがショックレーダイオード素子内に内蔵されて
いるため、外付はダイオードは必要ない。また、逆電流
が流れている間も素子内には逆導通ダイオード部にキャ
リアが注入されている為、仮にショックレーダイオード
部がオフしてしまって、次に順方向電圧がかかつてこの
電圧がＶＢＯに達しない場合でも、逆電流が流れている
あいだに注入されて素子内に残っているキャリアがトリ
ガ電流となってショックレーダイオード部がオンし、発
振電流波形は途切れることなく続き、大きな着火エネル
ギーを得ることができる。The Shockley diode formed in this manner has a reverse conduction diode at its outer peripheral portion. An example of a circuit using this as an ignition circuit element is shown in FIG. Since the reverse conduction diode is built into the Shockley diode element, no external diode is required. In addition, even while reverse current is flowing, carriers are injected into the reverse conduction diode part of the element, so if the Shockley diode part turns off and then the forward voltage increases, this voltage Even if VBO is not reached, the carriers injected while the reverse current is flowing and remaining in the element become a trigger current that turns on the Shockley diode section, and the oscillation current waveform continues without interruption, resulting in a large ignition. You can get energy.
第２図は本発明の他の実施例の縦断面図である。FIG. 2 is a longitudinal sectional view of another embodiment of the invention.
この例では逆導通ダイオードが素子の中央に位置してい
る。In this example, a reverse conducting diode is located in the center of the element.
以上説明した様に、本発明は、着火回路用素子として使
用する場合に、外付はダイオードを併設する必要がなく
、回路構成部品数を減すことができる効果がある。また
、振動電流が途切れることなく、大きな着火エネルギー
が得られるという効果がある。As described above, when the present invention is used as an ignition circuit element, there is no need to provide an external diode, and the number of circuit components can be reduced. Further, there is an effect that large ignition energy can be obtained without interruption of the oscillating current.
第１図は本発明の一実施例の縦断面図、第２図は本発明
の他の実施例の縦断面図、第３図は本発明のプレーナ形
逆導通ショックレーダイオードを使った場合の着火回路
例を示す回路図、第４図は従来のプレーナ形ショックレ
ーダイオードの縦断面図、第５図は従来のプレーナ形シ
ョックレーダイオードを使った場合の着火回路例を示す
回路図、第６図は正常な振動電流の波形図、第７図は途
中で途切れた振動電流の波形図である。
１・・・・・・Ｎ形カソード領域、２・・・・・・Ｐ形
ベース領域、３・・・・・・Ｎ形ベース領域、４・・・
・・・Ｐ形アノード領域、５・・・・・・独立したＰ影
領域、６・・・・・・裏面Ｎ＋領領域７・・・・・・カ
ソードショート部、８・・・・・・シリコン酸化膜、９
・・・・・・カソード電極、１０・・・・・・７ノード
電極、１１・・・・・・ショックレーダイオード、１２
・・・・・・外付はダイオード、１３・・・・・・コン
デンサ、１４・・・・・・昇圧トランス、１５・・・・
・・スイッチ、１６・・・・・・コンバータトランス、
１７・・・・・・逆導通ショックレーダイオード、１８
・・・・・・ショックレーダイオード部を流れる振動電
流、１９・・・・・・外付はダイオードまたは逆導通ダ
イオードを流れる振動電流。
代理人 弁理士 内 原 音
＄ ５ 図
茅 ３ 閃
袴 な
＼ ＼
旨 ｊ
く ト
寵 鵞FIG. 1 is a longitudinal cross-sectional view of one embodiment of the present invention, FIG. 2 is a longitudinal cross-sectional view of another embodiment of the present invention, and FIG. 3 is a longitudinal cross-sectional view of an embodiment of the present invention. A circuit diagram showing an example of an ignition circuit, FIG. 4 is a vertical cross-sectional view of a conventional planar Shockley diode, FIG. 5 is a circuit diagram showing an example of an ignition circuit using a conventional planar Shockley diode, and FIG. The figure is a waveform diagram of a normal oscillating current, and FIG. 7 is a waveform diagram of an oscillating current that is interrupted. 1... N-type cathode region, 2... P-type base region, 3... N-type base region, 4...
... P-type anode region, 5 ... Independent P shadow region, 6 ... Back N+ region region 7 ... Cathode short section, 8 ... silicon oxide film, 9
...Cathode electrode, 10...7 node electrode, 11...Shockley diode, 12
...... External diode, 13... Capacitor, 14... Step-up transformer, 15...
...Switch, 16...Converter transformer,
17... Reverse conducting Shockley diode, 18
... Oscillating current flowing through the Shockley diode section, 19... Oscillating current flowing through the external diode or reverse conduction diode. Agent Patent Attorney Oto Uchihara $ 5 Figure 3
Claims (1)
けられた他の導電型の第１の半導体領域と、該第１の半
導体領域と接続して設けられた第１の電極と、前記一主
面に前記第１の半導体領域と離間して設けられ前記第１
の電極とオーミック接続される第２の半導体領域と、前
記半導体基板の前記一主面とは反対側の他の主面に前記
第１の半導体領域と対向して設けられた前記他の導電型
の第３の半導体領域と、該第３の半導体領域内に設けら
れた前記一導電型の第４の半導体領域と、前記他の主面
に前記第２の半導体領域と対向して設けられた前記他の
導電型の第５の半導体領域と、前記第４の半導体領域と
前記第５の半導体領域に共通して接続される第２の電極
とを有することを特徴とする半導体装置。a semiconductor substrate of one conductivity type, a first semiconductor region of another conductivity type provided on one main surface of the semiconductor substrate, and a first electrode provided in connection with the first semiconductor region; the first semiconductor region provided on the one principal surface and spaced apart from the first semiconductor region;
a second semiconductor region that is ohmically connected to the electrode of the semiconductor substrate; and the other conductivity type provided on the other main surface of the semiconductor substrate opposite to the one main surface, facing the first semiconductor region. a third semiconductor region, a fourth semiconductor region of one conductivity type provided within the third semiconductor region, and a fourth semiconductor region provided on the other main surface facing the second semiconductor region. A semiconductor device comprising: a fifth semiconductor region of the other conductivity type; and a second electrode commonly connected to the fourth semiconductor region and the fifth semiconductor region.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4499888A JPH01218066A (en) | 1988-02-26 | 1988-02-26 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP4499888A JPH01218066A (en) | 1988-02-26 | 1988-02-26 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH01218066A true JPH01218066A (en) | 1989-08-31 |
Family
ID=12707093
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP4499888A Pending JPH01218066A (en) | 1988-02-26 | 1988-02-26 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH01218066A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03222479A (en) * | 1990-01-29 | 1991-10-01 | Nec Corp | Shockley diode |
| WO1992022926A1 (en) * | 1991-06-11 | 1992-12-23 | Texas Instruments Limited | A monolithic semiconductor component for transient voltage suppression |
| US5483086A (en) * | 1993-04-20 | 1996-01-09 | Shindengen Electric Manufacturing Co., Ltd. | Four layer semiconductor surge protector having plural short-circuited junctions |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4825486A (en) * | 1971-08-04 | 1973-04-03 | ||
| JPS4996683A (en) * | 1973-01-16 | 1974-09-12 | ||
| JPS50117378A (en) * | 1974-02-28 | 1975-09-13 | ||
| JPS52153385A (en) * | 1976-06-15 | 1977-12-20 | Toshiba Corp | Semiconductor device |
-
1988
- 1988-02-26 JP JP4499888A patent/JPH01218066A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4825486A (en) * | 1971-08-04 | 1973-04-03 | ||
| JPS4996683A (en) * | 1973-01-16 | 1974-09-12 | ||
| JPS50117378A (en) * | 1974-02-28 | 1975-09-13 | ||
| JPS52153385A (en) * | 1976-06-15 | 1977-12-20 | Toshiba Corp | Semiconductor device |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH03222479A (en) * | 1990-01-29 | 1991-10-01 | Nec Corp | Shockley diode |
| WO1992022926A1 (en) * | 1991-06-11 | 1992-12-23 | Texas Instruments Limited | A monolithic semiconductor component for transient voltage suppression |
| US5483086A (en) * | 1993-04-20 | 1996-01-09 | Shindengen Electric Manufacturing Co., Ltd. | Four layer semiconductor surge protector having plural short-circuited junctions |
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